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    1.
    发明专利
    未知

    公开(公告)号：DE69817642T2

    公开(公告)日：2004-08-05

    申请号：DE69817642

    申请日：1998-03-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  SHIOMI HIROMU ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

    IPC: H01J1/304 ,  H01J1/30

    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a ä100ü face, and the diamond protrusion is surrounded by ä111ü faces.

    2.
    发明专利
    未知

    公开(公告)号：DE69802037T2

    公开(公告)日：2002-03-14

    申请号：DE69802037

    申请日：1998-04-17

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

    IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205 ,  C30B25/20

    Abstract: An initial single-crystalline diamond base material (50) is prepared from a flat plate having a major surface (50a) and side surfaces consisting of low-index planes for homoepitaxially vapor-depositing single-crystalline diamond on the single-crystalline diamond base material (50), thereby forming single-crystalline diamond having a large area. Holding means (1) for the single-crystalline diamond base material (50) consists of a material hardly forming a compound with carbon, or is coated with such a material. According to this method and this apparatus, single-crystalline diamond can be stably formed on the surfaces of the base material (50). Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time by either plasma CVD or a thermal filament method.

    4.
    发明专利
    未知

    公开(公告)号：DE69709303D1

    公开(公告)日：2002-01-31

    申请号：DE69709303

    申请日：1997-12-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： TSUNO TAKASHI ,  IMAI TAKAHIRO ,  YOSHIDA KENTARO ,  KUMAZAWA YOSHIAKI

    IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  C30B25/02

    Abstract: In a method of synthesizing diamond on a substrate (11) from plasma containing a carbon component, filaments (3) are provided above the substrate (11). The filaments (3) contain tungsten which is a thermoelectron-emitting material. An electrode (4) is provided on a position separating from the filaments (3). The filaments (3) are at least temporarily supplied with a potential relatively higher than that of the substrate (11), while the electrode (4) is at least temporarily supplied with a potential relatively higher than that of the filaments (3). Thus, plasma is generated between the filaments (3) and the substrate (11), while electrons are moved from the filaments (3) to the electrode (4) for generating plasma between the filaments (3) and the electrode (4), thereby forming nuclei of diamond. The potentials of the electron emitters and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

    HIGH HARDNESS SINTERED COMPACT AND PROCESS FOR PRODUCING THE SAME
    6.
    发明专利
    HIGH HARDNESS SINTERED COMPACT AND PROCESS FOR PRODUCING THE SAME 未知

    公开(公告)号：DE3477207D1

    公开(公告)日：1989-04-20

    申请号：DE3477207

    申请日：1984-11-21

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NAKAI TETSUO ,  YAZU SYUZI ,  ASAI KEIZO ,  KUMAZAWA YOSHIAKI

    IPC: B01J3/06 ,  C22C26/00

    Abstract: Herein is disclosed a high hardness sintered diamond compact and a process for the production of the same. The high hardness sintered diamond compact comprises 80 to 95% by volume of diamond particles, 0.5 to 5% by volume of a carbide particles selected from a group consisting of WC and (Mo,W)C and having a diameter not larger than 1 micron, and 4.5 to 15% by volume of an iron group metal, at least 95% by volume of said diamond particles having a diameter from 0.1 to 2 micron and the remainder of the diamond particles being particles having a diameter smaller than 0.1 micron. The ratio by volume of the amount of the diamond particles having a diameter from 1 to 2 micron to that of the diamond particles having a diameter from 0.1 to 1 micron ranges from 4 to 1. The high hardness sintered diamond compact according to the present invention is preferably usable as a drawing die for drawing a high hardness plated-steel wire and as a tool bit. The process according to the invention, comprises the steps of: preparing a diamond powder having a particle diameter distribution from 0.2 to 2 micron; mixing the diamond powder with an iron group metal and one member selected from the group consisting of WC and (Mo,W)C powders each having a particle diameter not larger than 1 micron; hot-pressing the thus obtained mixture of powders at an ultra-high pressure and a high temperature where diamond may be stable.

    7.
    发明专利
    未知

    公开(公告)号：DE69817642D1

    公开(公告)日：2003-10-09

    申请号：DE69817642

    申请日：1998-03-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  SHIOMI HIROMU ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

    IPC: H01J1/304 ,  H01J1/30

    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a ä100ü face, and the diamond protrusion is surrounded by ä111ü faces.

    8.
    发明专利
    未知

    公开(公告)号：DE69802037D1

    公开(公告)日：2001-11-22

    申请号：DE69802037

    申请日：1998-04-17

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

    IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205 ,  C30B25/20

    Abstract: An initial single-crystalline diamond base material (50) is prepared from a flat plate having a major surface (50a) and side surfaces consisting of low-index planes for homoepitaxially vapor-depositing single-crystalline diamond on the single-crystalline diamond base material (50), thereby forming single-crystalline diamond having a large area. Holding means (1) for the single-crystalline diamond base material (50) consists of a material hardly forming a compound with carbon, or is coated with such a material. According to this method and this apparatus, single-crystalline diamond can be stably formed on the surfaces of the base material (50). Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time by either plasma CVD or a thermal filament method.

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