中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

52 records (took 0.028 seconds)

    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME
    32.
    发明公开
    MODULE COMPRISING ANTENNA AND RF ELEMENT, AND BASE STATION INCLUDING SAME 审中-公开

    公开(公告)号：EP3694050A1

    公开(公告)日：2020-08-12

    申请号：EP18892022.7

    申请日：2018-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： BAEK, Kwanghyun ,  KO, Seungtae ,  KIM, Kijoon ,  SON, Juho ,  LEE, Sangho ,  LEE, Youngju ,  LEE, Jungyub ,  CHEON, Yonghun ,  HA, Dohyuk

    IPC: H01Q1/38 ,  H04Q1/02 ,  H01Q9/04 ,  H01Q1/02 ,  H01Q1/24

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. According to the disclosure, an antenna module includes a first substrate layer on which at least one substrate is stacked; an antenna coupled to an upper end surface of the first substrate layer; a second substrate layer having an upper end surface coupled to a lower end surface of the first substrate layer and on which at least one substrate is stacked; and a radio frequency (RF) element coupled to a lower end surface of the second substrate layer.

    METHOD FOR TRANSMITTING DATA, AND DEVICE THEREFOR
    34.
    发明公开
    METHOD FOR TRANSMITTING DATA, AND DEVICE THEREFOR 审中-公开

    公开(公告)号：EP3934313A1

    公开(公告)日：2022-01-05

    申请号：EP20783416.9

    申请日：2020-03-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： KIM, Junsuk ,  LEE, Soomin ,  LEE, Sangho ,  LEE, Hyerim ,  KIM, Hyejeong ,  PARK, Suyoung

    IPC: H04W28/02 ,  H04W28/06 ,  H04W36/02 ,  H04W76/20 ,  H04W80/02 ,  H04L29/06 ,  H04L29/08

    Abstract: Disclosed is an electronic device including at least one wireless communication circuit configured to provide a first radio access technology (RAT) and a second RAT, at least one processor operatively connected to the at least one wireless communication circuit and configured to provide a first packet data convergence protocol (PDCP) related to the first RAT and a second PDCP related to the second RAT, a volatile memory operatively connected to the at least one processor and including, in at least a partial region thereof, a first buffer, and a nonvolatile memory operatively connected to the at least one processor or coupled to the processor. The electronic device may change a PDCP version of a data packet based on a change of a PDCP version. Besides, other various embodiments recognized through the present disclosure can be made.

    APPARATUS AND METHOD FOR CONTROLLING COMFORT TEMPERATURE OF AIR CONDITIONING DEVICE OR AIR CONDITIONING SYSTEM
    36.
    发明公开
    APPARATUS AND METHOD FOR CONTROLLING COMFORT TEMPERATURE OF AIR CONDITIONING DEVICE OR AIR CONDITIONING SYSTEM 审中-公开
    设备及其控制方法舒适的温度冷却装置或空调系统

    公开(公告)号：EP3078919A1

    公开(公告)日：2016-10-12

    申请号：EP14868349.3

    申请日：2014-12-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： LEE, Hyunjoo ,  SEO, Jeongil ,  LEE, Sangho ,  CHOI, Dongsuk

    IPC: F24F11/02

    CPC classification number: F24F11/0012 ,  F24F11/30 ,  F24F11/46 ,  F24F11/62 ,  F24F11/65 ,  F24F11/70 ,  F24F2110/10 ,  F24F2110/12 ,  F24F2110/20 ,  F24F2110/22 ,  G05B19/048 ,  G05B2219/2614 ,  G05D23/1919

    Abstract: A method for controlling a temperature in an air conditioning device according to an embodiment of the present invention includes: calculating an exponentially-weighted running mean temperature for outdoor temperatures measured for a predetermined period, setting a variable constant and a fixed constant according to the exponentially-weighted running mean temperature and an operation condition, setting a comfort temperature by multiplying the exponentially-weighted running mean temperature by the variable constant and adding the fixed constant, and controlling an indoor temperature by using the set comfort temperature. Here, the fixed constant and the variable constant are constants obtained through a regression analysis of a distribution relationship between an exponentially-weighted running mean temperature and a comfort temperature, and the distribution of comfort temperatures is linearly increased from the fixed constant with a gradient of the comfort temperature according to the exponentially-weighted running mean temperature.

    Abstract translation: 一种用于雅丁在本发明的实施方式在空调装置在控制的温度下的方法包括：计算在指数加权运行测量预定时间段的室外温度的平均温度，可变常数和固定的恒定雅丁设置为呈指数 加权滑动平均温度，并在操作条件下，通过乘以由可变恒定的指数加权滑动平均温度设定一个舒适的温度并添加固定的恒定，并且通过使用所设置的舒适温度控制室内温度的。 在此，固定常数和变量常数的常数，通过对指数加权滑动平均温度和舒适的温度和舒适温度的分布之间的分配关系进行回归分析得到的直线从固定常数增加与梯度 舒适温度gemäß到指数加权滑动平均温度。

    SEMICONDUCTOR DEVICE
    37.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP4307386A1

    公开(公告)日：2024-01-17

    申请号：EP23175177.7

    申请日：2023-05-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： LEE, Sangho ,  JEONG, Moonyoung ,  NOH, Hyungjun

    IPC: H01L29/423 ,  H01L29/786 ,  H01L29/51

    Abstract: A semiconductor device includes a vertical pattern including a first source/drain region, a second source/drain region having a height higher than a height of the first source/drain region, and a vertical channel region between the first and second source/drain regions, a front gate structure facing a first side surface of the vertical pattern, and a back gate structure facing a second side surface of the vertical pattern, opposite to the first side surface of the vertical pattern. The front gate structure includes a gate electrode on the first side surface of the vertical pattern, and a gate dielectric layer including a portion disposed between the vertical pattern and the gate electrode. The back gate structure includes a back gate electrode on the second side surface of the vertical pattern, and a dielectric structure including a portion disposed between the vertical pattern and the back gate electrode. The dielectric structure includes an air gap.

    SEMICONDUCTOR DEVICE
    38.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP4255148A1

    公开(公告)日：2023-10-04

    申请号：EP23165260.3

    申请日：2023-03-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JEONG, Moonyoung ,  LEE, Kiseok ,  LEE, Sangho ,  NOH, Hyungjun

    IPC: H10B12/00 ,  H01L21/336 ,  H01L29/78

    Abstract: A semiconductor device (1) includes a substrate (5), a first gate structure (30a) and a second gate structure (30b) on the substrate, a single back gate structure (40) between the first gate structure and the second gate structure, a first structure including a first vertical channel region (20c1) extending in a vertical direction (Z), at least a portion of the first vertical channel region between the first gate structure and the single back gate structure, and a second structure (20c2) including a second vertical channel region extending in the vertical direction. The second structure is spaced apart from the first structure, and at least a portion of the second vertical channel region is between the second gate structure and the single back gate structure.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    40.
    发明公开
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：EP4113608A1

    公开(公告)日：2023-01-04

    申请号：EP22164916.3

    申请日：2022-03-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Taejin ,  KIM, Hui-Jung ,  LEE, Sangho

    IPC: H01L27/108

    Abstract: A semiconductor memory device includes active regions including first impurity regions and second impurity regions, word lines on the active regions and extended in a first direction, bit lines on the word lines and extended in a second direction crossing the first direction, the bit lines being connected to the first impurity regions, first contact plugs between the bit lines, the first contact plugs being connected to the second impurity regions, landing pads on the first contact plugs, respectively, and gap-fill structures filling spaces between the landing pads, top surfaces of the gap-fill structures being higher than top surfaces of the landing pads.

Patent Agency Ranking