Abstract:
The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The present disclosure provides a method for operating an electronic device. The method comprises transmitting a signal including a list of one or more objects, receiving a signal including beacon recognition information of at least one object included in the list of one or more objects, storing the beacon recognition information, and making a request for information on the at least one object to a server when receiving at least one beacon signal that matches with the stored beacon recognition information.
Abstract:
A method of processing an input in an electronic device having a touch screen is provided. The method includes identifying attribute information of a geometric figure corresponding to an area of a touch input detected through the touch screen, determining a user input from the attribute information, based on a stored user input distinction rule, and executing a function corresponding to the determined user input.
Abstract:
A technique for sensor network, Machine to Machine (M2M), Machine Type Communication (MTC), Internet of Things (IoT) is provided. The present disclosure can be applied to intelligent services (smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail, security and safety service) based on the technique. A method for operating a user equipment (UE) is provided. The method includes receiving a first signal comprising a first category identification (ID) and a first unique ID from a first beacon device, determining a distance from the first beacon device based on the first signal, if the distance is below a threshold, registering the first category ID, and if a second signal comprising the registered first category ID from a second beacon device, displaying information corresponding to a second unique ID of the second signal.
Abstract:
The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method of providing a user interface (UI) by an electronic device is provided. The method includes displaying a control UI, receiving a first drag input via the displayed control UI, and, when a direction of the first drag input corresponds to a first direction, displaying a cursor UI at a preset location. According to an embodiment of the present disclosure, a UI through which an electronic device can easily receive a user input may be provided. More specifically, in a limited input state including a one hand input, a user can easily make an input for selecting an item displayed on a display unit and, accordingly, user convenience can be improved.
Abstract:
A semiconductor device includes a first gate structure in a cell region of a substrate, where the substrate includes a peripheral circuit region, a bit line structure on the cell region of the substrate, a cell capacitor structure on the bit line structure, a decoupling capacitor structure on the peripheral circuit region of the substrate, and a second gate structure on the decoupling capacitor structure.
Abstract:
A semiconductor device includes an active array in which a plurality of active patterns are arranged on a substrate; a gate structure extending in a first direction and crossing central portions of the active patterns; a bit line structure contacting first portions of the active patterns adjacent to a first sidewall of the gate structure and extending in a second direction; and a capacitor electrically connected to a second portion of each of the active patterns adjacent to a second sidewall of the gate structure. In a plan view, an upper end portion of each of the active patterns and a lower end portion of each of the active patterns are arranged to be spaced apart in a third direction oblique with respect to the first direction. The active patterns arranged side by side in the second direction form an active column.
Abstract:
A semiconductor device includes an active pattern array including active patterns, an isolation pattern, gate structures, bit line structures, and lower and upper contact plugs. The isolation pattern covers sidewalls of the active patterns. The gate structures extend through upper portions of the active patterns and the isolation pattern in a first direction, and are spaced apart from each other in a second direction. The bit line structures are on central portions of the active patterns and the isolation pattern, extend in the second direction, and are spaced apart from each other in the first direction. The lower contact plugs are disposed on end portions of the active patterns. The upper contact plugs are disposed on the lower contact plugs. The active pattern array includes active pattern rows including the active patterns spaced apart from each other in the first direction.
Abstract:
Semiconductor memory devices may include first and second stacks on a substrate and first and second interconnection lines on the first and second stacks. Each of the first and second stacks may include semiconductor patterns vertically stacked on the substrate, conductive lines connected to the semiconductor patterns, respectively, and a gate electrode that is adjacent to the semiconductor patterns and extends in a vertical direction. The first stack may include a first conductive line and a first gate electrode, and the second stack may include a second conductive line and a second gate electrode. Lower surfaces of the first and second conductive lines may be coplanar. The first interconnection line may be electrically connected to at least one of the first and second conductive lines. The second interconnection line may be electrically connected to at least one of the first and second gate electrodes.
Abstract:
A semiconductor device includes a gate structure (170), a bit line structure (355), a contact plug structure (430, 450, 485), a stack structure (600, 610), and a capacitor (640, 650, 660). The gate structure (170) is disposed on first substrate (100). The bit line structure (355) is disposed on the gate structure (170). The contact plug structure (430, 450, 485) is disposed on the first substrate (100) and spaced apart from the bit line structure (355). The stack structure (600, 610) is disposed on the bit line structure (355) and the contact plug structure (430, 450, 485), and may include insulation layers (600) and plate electrodes (610) alternately stacked in a vertical direction substantially perpendicular to an upper surface of the first substrate (100). The capacitor (640, 650, 660) includes a second electrode (660) extending through the stack structure and contacting the contact plug structure (430, 450, 485). A ferroelectric pattern (650) is disposed on a sidewall of the second electrode (660). First electrodes (640) are disposed on a sidewall of the ferroelectric pattern (650), contact sidewalls of the plate electrodes (610), respectively, and are spaced apart from each other in the vertical direction.