公开(公告)号：US20170194475A1

公开(公告)日：2017-07-06

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20 ,  H01L29/417

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US20170104138A1

公开(公告)日：2017-04-13

申请号：US15388468

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Saulius Smetona ,  Alexander Dobrinsky ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L33/56 ,  H01L33/58 ,  H01L33/50 ,  H01L33/48

CPC classification number: H01L33/56 ,  B29C51/12 ,  B29L2031/3481 ,  B29L2031/747 ,  G02B3/005 ,  G02B6/4249 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/81801 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

公开(公告)号：US20160343901A1

公开(公告)日：2016-11-24

申请号：US15225382

申请日：2016-08-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/18 ,  H01L33/30 ,  H01L33/382 ,  H01L2224/14 ,  H01S5/0224 ,  H01S5/3209 ,  H01S5/3413 ,  H01S5/34333

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract translation: 提供了包括包括多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。

公开(公告)号：US20160322466A1

公开(公告)日：2016-11-03

申请号：US15208309

申请日：2016-07-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/20 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/861 ,  H01L29/78

CPC classification number: H01L29/2003 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/0657 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/66477 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/7831 ,  H01L29/7838 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract translation: 提供了一种横向半导体器件和/或设计，其包括空间电荷产生层和位于器件沟道的相对侧上的电极或电极组，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。

公开(公告)号：US20150287602A1

公开(公告)日：2015-10-08

申请号：US14747150

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L21/283 ,  H01S5/30 ,  H01L33/40 ,  H01S5/042 ,  H01L31/0224 ,  H01L33/00

CPC classification number: H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US10923623B2

公开(公告)日：2021-02-16

申请号：US16299362

申请日：2019-03-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/18 ,  H01L33/38 ,  H01L33/00 ,  H01S5/022 ,  H01S5/343 ,  H01L33/30 ,  H01S5/32 ,  H01S5/34

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

公开(公告)号：US10854785B2

公开(公告)日：2020-12-01

申请号：US15798909

申请日：2017-10-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Maxim S. Shatalov ,  Mikhail Gaevski ,  Michael Shur

IPC: H01L29/06 ,  H01L33/40 ,  H01L33/20 ,  H01L33/44 ,  H01L33/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/38 ,  H01L31/0232 ,  H01L33/46

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.

公开(公告)号：US10707379B2

公开(公告)日：2020-07-07

申请号：US16025186

申请日：2018-07-02

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Maxim S. Shatalov ,  Mikhail Gaevski ,  Michael Shur

IPC: H01L29/06 ,  H01L33/38 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L33/00 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/06 ,  H01L33/04

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.

公开(公告)号：US10147848B2

公开(公告)日：2018-12-04

申请号：US15283462

申请日：2016-10-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L29/06 ,  H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L31/0232 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0224 ,  H01L31/18 ,  H01L33/20 ,  H01L33/46

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.

公开(公告)号：US20170256623A1

公开(公告)日：2017-09-07

申请号：US15601128

申请日：2017-05-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/45 ,  H01L33/38 ,  H01L21/285 ,  H01L29/417

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.