公开(公告)号：US09768357B2

公开(公告)日：2017-09-19

申请号：US15042433

申请日：2016-02-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur ,  Grigory Simin

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L23/00 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L24/05 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

公开(公告)号：US09741899B2

公开(公告)日：2017-08-22

申请号：US14728435

申请日：2015-06-02

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/22 ,  C30B29/68 ,  C30B29/40 ,  H01L33/00 ,  H01L33/20 ,  H01S5/022 ,  B82Y20/00 ,  H01S5/343

CPC classification number: H01L33/22 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/68 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0083 ,  H01L2933/0091 ,  H01S5/0224 ,  H01S5/34333

Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

公开(公告)号：US20170229611A1

公开(公告)日：2017-08-10

申请号：US15496887

申请日：2017-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/12 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/308 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/158 ,  H01L29/2003 ,  H01L29/66075 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

公开(公告)号：US09705032B2

公开(公告)日：2017-07-11

申请号：US15069249

申请日：2016-03-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang ,  Alexander Dobrinsky

IPC: H01L33/26 ,  H01L33/06 ,  H01L33/04 ,  H01L33/32 ,  H01L33/02 ,  H01L33/10 ,  H01L33/14

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/04 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/325

Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).

公开(公告)号：US09703055B2

公开(公告)日：2017-07-11

申请号：US14853014

申请日：2015-09-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G02B6/42 ,  G02B6/10 ,  G02B6/122 ,  G02B6/136 ,  G02B6/34 ,  G02B6/12 ,  F21V8/00

CPC classification number: G02B6/4239 ,  G02B6/0096 ,  G02B6/102 ,  G02B6/1225 ,  G02B6/136 ,  G02B6/34 ,  G02B6/4204 ,  G02B2006/12035 ,  G02B2006/12104

Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.

公开(公告)号：US09696484B2

公开(公告)日：2017-07-04

申请号：US14853057

申请日：2015-09-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G02B6/10 ,  G02B6/122

CPC classification number: G02B6/10 ,  G02B6/1221

Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.

公开(公告)号：US09687577B2

公开(公告)日：2017-06-27

申请号：US14853036

申请日：2015-09-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A43B1/0045 ,  A43B3/001 ,  A43B17/10 ,  A61L2202/14

Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.

公开(公告)号：US20170110628A1

公开(公告)日：2017-04-20

申请号：US15391994

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  C30B29/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/00 ,  H01L33/14 ,  H01L33/40

CPC classification number: H01L33/12 ,  C30B29/403 ,  G06F17/505 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

公开(公告)号：US09627351B2

公开(公告)日：2017-04-18

申请号：US14834606

申请日：2015-08-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Yuri Bilenko ,  Michael Shur ,  Remigijus Gaska ,  Alexander Dobrinsky

IPC: H01L29/24 ,  H01L23/00 ,  H01L33/62 ,  H01L25/07 ,  H01L21/78 ,  H01L33/52 ,  H01L23/495 ,  H01L33/60

CPC classification number: H01L23/49541 ,  H01L21/78 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/81 ,  H01L24/94 ,  H01L25/072 ,  H01L25/075 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/81191 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/81

Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.

公开(公告)号：US20170101328A1

公开(公告)日：2017-04-13

申请号：US15388330

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: C02F1/32 ,  A61L2/10

CPC classification number: C02F1/325 ,  A61L2/10 ,  C02F2201/3221 ,  C02F2201/3222 ,  C02F2201/3227 ,  C02F2201/3228 ,  C02F2201/328 ,  C02F2303/04

Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.