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公开(公告)号:US11312622B1
公开(公告)日:2022-04-26
申请号:US16915696
申请日:2020-06-29
Applicant: SiTime Corporation
Inventor: Nicholas Miller , Ginel C. Hill , Charles I. Grosjean , Michael Julian Daneman , Paul M. Hagelin , Aaron Partridge
Abstract: A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.
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公开(公告)号:US20210221678A1
公开(公告)日:2021-07-22
申请号:US16983141
申请日:2020-08-03
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: B81C1/00 , H01L41/113 , H01L23/051 , B81B7/00
Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.
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公开(公告)号:US10476477B1
公开(公告)日:2019-11-12
申请号:US15697417
申请日:2017-09-06
Applicant: SiTime Corporation
Inventor: Charles I. Grosjean , Ginel C. Hill , Paul M. Hagelin , Renata Melamud Berger , Aaron Partridge , Markus Lutz
Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
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公开(公告)号:US10247621B1
公开(公告)日:2019-04-02
申请号:US15264583
申请日:2016-09-13
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Samira Zaliasl , Meisam Heidarpour Roshan , Sassan Tabatabaei
Abstract: In a high resolution temperature sensor, first and second MEMS resonators generate respective first and second clock signals and a locked-loop reference clock generator generates a reference clock signal having a frequency that is phase-locked to at least one of the first and second clock signals. A frequency-ratio engine within the MEMS temperature sensor oversamples at least one of the first and second clock signals with the reference clock signal to generate a ratio of the frequencies of the first and second clock signals.
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公开(公告)号:US10099917B2
公开(公告)日:2018-10-16
申请号:US15686480
申请日:2017-08-25
Applicant: SiTime Corporation
Inventor: Aaron Partridge , Markus Lutz , Pavan Gupta
IPC: H01L23/051 , B81C1/00 , B81B7/00 , H01L41/113
Abstract: After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.
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公开(公告)号:US09945734B1
公开(公告)日:2018-04-17
申请号:US15601431
申请日:2017-05-22
Applicant: SiTime Corporation
Inventor: Carl Arft , Aaron Partridge , Paul M. Hagelin
Abstract: A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.
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公开(公告)号:US09695036B1
公开(公告)日:2017-07-04
申请号:US13759013
申请日:2013-02-04
Applicant: SiTime Corporation
Inventor: Renata Melamud Berger , Ginel C. Hill , Paul M. Hagelin , Charles I. Grosjean , Aaron Partridge , Joseph C. Doll , Markus Lutz
IPC: H01L31/058 , H03H9/00 , B81B3/00 , H03H9/02 , H03H9/24
CPC classification number: B81B3/0024 , H03H9/02448 , H03H9/2405 , H03H9/2457
Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3.
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公开(公告)号:US20250019229A1
公开(公告)日:2025-01-16
申请号:US18641815
申请日:2024-04-22
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.
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公开(公告)号:US11987495B2
公开(公告)日:2024-05-21
申请号:US18206520
申请日:2023-06-06
Applicant: SiTime Corporation
Inventor: Pavan Gupta , Aaron Partridge , Markus Lutz
CPC classification number: B81B7/0083 , B81B7/007 , B81B7/0077 , B81C1/0023 , B81C1/00301 , B81C1/00333 , B81C1/00341 , H01L23/34 , H01L23/498 , H10N30/302 , B81B2201/0271 , B81B2207/07 , B81B2207/094 , B81C2201/016 , B81C2203/0118 , B81C2203/0154 , H01L23/3107 , H01L2224/48091 , H01L2224/48245 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/10253 , H01L2924/1461 , H01L2924/181 , H01L2924/10253 , H01L2924/00 , H01L2224/48091 , H01L2924/00014 , H01L2924/1461 , H01L2924/00 , H01L2924/181 , H01L2924/00012
Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.
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公开(公告)号:US11770112B1
公开(公告)日:2023-09-26
申请号:US17197378
申请日:2021-03-10
Applicant: SiTime Corporation
Inventor: Charles I. Grosjean , Ginel C. Hill , Paul M. Hagelin , Renata Melamud Berger , Aaron Partridge , Markus Lutz
CPC classification number: H03H9/2457 , B81C1/0069 , H03H3/0072 , H03H3/0076 , H03H9/1057
Abstract: A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
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