公开(公告)号：US09945734B1

公开(公告)日：2018-04-17

申请号：US15601431

申请日：2017-05-22

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Paul M. Hagelin

IPC: G01K7/00 ,  G01K7/22

CPC classification number: G01K7/226 ,  G01K13/02

Abstract: A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.

公开(公告)号：US11374535B2

公开(公告)日：2022-06-28

申请号：US16699270

申请日：2019-11-29

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Markus Lutz ,  Charles I. Grosjean

IPC: H03B5/04 ,  H03B5/30 ,  H01L23/31 ,  H01L23/34 ,  B81B3/00 ,  H01L23/00

Abstract: One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

公开(公告)号：US20200186084A1

公开(公告)日：2020-06-11

申请号：US16699270

申请日：2019-11-29

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Markus Lutz ,  Charles I. Grosjean

IPC: H03B5/04 ,  H01L23/31 ,  H01L23/34 ,  H01L23/00 ,  B81B3/00 ,  H03B5/30

Abstract: One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

公开(公告)号：US20250007455A1

公开(公告)日：2025-01-02

申请号：US18412695

申请日：2024-01-15

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Markus Lutz ,  Charles I. Grosjean

IPC: H03B5/04 ,  B81B3/00 ,  B81B7/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H03B5/30 ,  H03H9/08 ,  H03L1/04

Abstract: One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate-in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

公开(公告)号：US11909354B2

公开(公告)日：2024-02-20

申请号：US17824389

申请日：2022-05-25

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Markus Lutz ,  Charles I. Grosjean

IPC: H03B5/04 ,  H03B5/30 ,  H01L23/31 ,  H01L23/34 ,  B81B3/00 ,  H01L23/00 ,  B81B7/00 ,  H03L1/04 ,  H03H9/08

CPC classification number: H03B5/04 ,  B81B3/0081 ,  B81B7/0096 ,  H01L23/3121 ,  H01L23/345 ,  H01L24/16 ,  H03B5/30 ,  H03L1/04 ,  B81B2207/012 ,  B81B2207/098 ,  H01L2224/16145 ,  H01L2924/1461 ,  H03H9/08

Abstract: One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

公开(公告)号：US10458858B1

公开(公告)日：2019-10-29

申请号：US15916069

申请日：2018-03-08

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Paul M. Hagelin

IPC: G01K7/00 ,  G01K7/22

Abstract: A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.

公开(公告)号：US11543301B1

公开(公告)日：2023-01-03

申请号：US16565908

申请日：2019-09-10

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Paul M. Hagelin

IPC: G01K7/22 ,  G01K13/02 ,  H03L1/00

Abstract: A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.

公开(公告)号：US20220360218A1

公开(公告)日：2022-11-10

申请号：US17824389

申请日：2022-05-25

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Markus Lutz ,  Charles I. Grosjean

IPC: H03B5/04 ,  H03B5/30 ,  H01L23/31 ,  H01L23/34 ,  B81B3/00 ,  H01L23/00

Abstract: One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

公开(公告)号：US09677948B1

公开(公告)日：2017-06-13

申请号：US14681848

申请日：2015-04-08

Applicant: SiTime Corporation

Inventor： Carl Arft ,  Aaron Partridge ,  Paul M. Hagelin

IPC: G01K7/00 ,  G01K7/22

CPC classification number: G01K7/226 ,  G01K13/02

Abstract: A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.