Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2021200729B2

    公开(公告)日:2022-11-24

    申请号:AU2021200729

    申请日:2021-02-04

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Counter electrode for electrochromic devices

    公开(公告)号:AU2021236496A1

    公开(公告)日:2021-10-21

    申请号:AU2021236496

    申请日:2021-09-22

    Applicant: VIEW INC

    Abstract: COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

    Counter electrode for electrochromic devices

    公开(公告)号:AU2021202495A1

    公开(公告)日:2021-05-20

    申请号:AU2021202495

    申请日:2021-04-23

    Applicant: VIEW INC

    Abstract: COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2018267645A1

    公开(公告)日:2018-12-13

    申请号:AU2018267645

    申请日:2018-11-22

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2014214738B2

    公开(公告)日:2017-09-14

    申请号:AU2014214738

    申请日:2014-02-07

    Applicant: VIEW INC

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES

    公开(公告)号:CA2992423A1

    公开(公告)日:2017-01-19

    申请号:CA2992423

    申请日:2016-07-07

    Applicant: VIEW INC

    Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

    COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES
    39.
    发明公开

    公开(公告)号:EP3323016A1

    公开(公告)日:2018-05-23

    申请号:EP16824923

    申请日:2016-07-07

    Applicant: VIEW INC

    CPC classification number: G02F1/1523

    Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

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