전기변색 소자들을 위한 상대 전극
    1.
    发明公开
    전기변색 소자들을 위한 상대 전극 审中-公开
    电致变色装置的反电极

    公开(公告)号:KR20180020299A

    公开(公告)日:2018-02-27

    申请号:KR20187002665

    申请日:2016-07-07

    Applicant: VIEW INC

    CPC classification number: G02F1/1523

    Abstract: 본출원에서의실시예들은전기변색스택들, 전기변색소자들, 및이러한스택들, 및소자들을제조하기위한방법들및 장치에관한것이다. 다양한실시예에서, 전기변색스택또는소자의양극성착색층은이질적구조, 예를들어이질적조성및/또는모폴러지를포함하도록제조된다. 이러한이질적양극성착색층들은소자의속성들보다양호하게튜닝하기위해사용될수 있다.

    Abstract translation: 本申请中的实施方式涉及电致变色堆叠,电致变色装置以及用于制造这种堆叠和装置的方法和设备。 在各种实施例中,电致变色堆叠或器件的双极着色层被制造为包括非均相结构,例如非均相组成和/或形态。 这些异质双极着色层可用于更好地调整器件性能。

    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES
    2.
    发明申请
    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES 审中-公开
    电光设备中的缺陷减缓层

    公开(公告)号:WO2014124303A3

    公开(公告)日:2015-01-15

    申请号:PCT/US2014015374

    申请日:2014-02-07

    Applicant: VIEW INC

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层,防止电子传导层和/或电致变色层接触相反极性的层,并在缺陷形成的区域中产生短路。 在一些实施例中,提供封装层以封装颗粒并防止它们从器件堆叠中排出,并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中,绝缘层包含一种或多种以下金属氧化物:氧化铝,氧化锌,氧化锡,氧化硅铝,氧化铈,氧化钨,氧化镍氧化物和氧化的氧化铟锡氧化物。 也可以使用硬质合金,氮化物,氧氮化物和碳氧化物。

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2022263593A1

    公开(公告)日:2022-12-15

    申请号:AU2022263593

    申请日:2022-11-04

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2021200729A1

    公开(公告)日:2021-03-04

    申请号:AU2021200729

    申请日:2021-02-04

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2017204525B2

    公开(公告)日:2018-08-23

    申请号:AU2017204525

    申请日:2017-06-30

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2017204525A1

    公开(公告)日:2017-07-20

    申请号:AU2017204525

    申请日:2017-06-30

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    ПРОТИВОЭЛЕКТРОД ДЛЯ ЭЛЕКТРОХРОМНЫХ УСТРОЙСТВ

    公开(公告)号:RU2711523C2

    公开(公告)日:2020-01-17

    申请号:RU2018105193

    申请日:2016-07-07

    Applicant: VIEW INC

    Abstract: Изобретениеотноситсяк электрохромнымустройствам. Устройствосодержит: подложку; электрохромныйслой, размещенныйнаподложкеилиповерхподложки, гдеуказанныйэлектрохромныйслойсодержиткатодно-тонируемыйэлектрохромныйматериал; ипротивоэлектродныйслой, такжеразмещенныйнаподложкеилиповерхподложки. Указанныйпротивоэлектродныйслойсодержит (a) первыйподслой, содержащийпервыйанодно-тонируемыйматериал, и (b) второйподслой, содержащийвторойанодно-тонируемыйматериал. Первыйи второйанодно-тонируемыематериалыимеютразныесоставы, нокаждыйсодержитоксидпоменьшеймереодногопереходногометалла, причемпервыйподслойрасположенмеждуэлектрохромнымслоеми вторымподслоем. Изобретениеобеспечиваетулучшениеоптическихсвойствустройстваи егосрокаслужбы. 2 н. и 47 з.п. ф-лы, 24 ил.

    CONTROLLING TRANSITIONS IN OPTICALLY SWITCHABLE DEVICES

    公开(公告)号:CA3001233A1

    公开(公告)日:2017-04-13

    申请号:CA3001233

    申请日:2016-10-06

    Applicant: VIEW INC

    Abstract: Aspects of this disclosure concern controllers and control methods for applying a drive voltage to bus bars of optically switchable devices such as electrochromic devices. Such devices are often provided on windows such as architectural glass. In certain embodiments, the applied drive voltage is controlled in a manner that efficiently drives an optical transition over the entire surface of the electrochromic device. The drive voltage is controlled to account for differences in effective voltage experienced in regions between the bus bars and regions proximate the bus bars. Regions near the bus bars experience the highest effective voltage. In some cases, feedback may be used to monitor an optical transition. In these or other cases, a group of optically switchable devices may transition together over a particular duration to achieve approximately uniform tint states over time during the transition.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2014214738A1

    公开(公告)日:2015-08-13

    申请号:AU2014214738

    申请日:2014-02-07

    Applicant: VIEW INC

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES

    公开(公告)号:CA2899607A1

    公开(公告)日:2014-08-14

    申请号:CA2899607

    申请日:2014-02-07

    Applicant: VIEW INC

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Patent Agency Ranking