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    THIN-FILM DEVICES AND FABRICATION
    1.
    发明申请
    THIN-FILM DEVICES AND FABRICATION 审中-公开
    薄膜器件和制造

    公开(公告)号：WO2016105549A3

    公开(公告)日：2016-07-28

    申请号：PCT/US2015000411

    申请日：2015-12-24

    Applicant: VIEW INC ,  DIXIT ABHISHEK ANANT ,  MARTIN TODD ,  PRADHAN ANSHU A ,  STRONG FABIAN

    Inventor： DIXIT ABHISHEK ANANT ,  MARTIN TODD ,  PRADHAN ANSHU A ,  STRONG FABIAN ,  ROZBICKI ROBERT T

    IPC: H01L27/14

    CPC classification number: H01L27/1443 ,  G02F1/1523 ,  G02F1/153 ,  G02F1/155

    Abstract: Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

    Abstract translation: 描述了薄膜器件，例如用于窗户的电致变色器件以及制造方法。 特别关注图案化光学器件的方法。 例如，执行各种边缘删除和隔离划线，以确保光学器件与任何边缘缺陷具有适当的隔离。 本文描述的方法适用于具有夹在两个薄膜电导体层之间的一个或多个材料层的任何薄膜器件。 所描述的方法产生新颖的光学装置配置。

    Thin-film devices and fabrication
    2.
    发明专利
    Thin-film devices and fabrication 未知

    公开(公告)号：AU2020250303B2

    公开(公告)日：2022-12-08

    申请号：AU2020250303

    申请日：2020-10-09

    Applicant: VIEW INC

    Inventor： DIXIT ABHISHEK ANANT ,  MARTIN TODD ,  PRADHAN ANSHU A ,  STRONG FABIAN ,  ROZBICKI ROBERT T

    IPC: H01L27/14

    Abstract: THIN-FILM DEVICES AND FABRICATION Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES
    6.
    发明申请
    DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES 审中-公开
    电光设备中的缺陷减缓层

    公开(公告)号：WO2014124303A3

    公开(公告)日：2015-01-15

    申请号：PCT/US2014015374

    申请日：2014-02-07

    Applicant: VIEW INC

    Inventor： KAILASAM SRIDHAR K ,  FRIEDMAN ROBIN ,  GILLASPIE DANE ,  PRADHAN ANSHU A ,  ROZBICKI ROBERT T ,  MEHTANI DISHA

    IPC: G02F1/15

    CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层，防止电子传导层和/或电致变色层接触相反极性的层，并在缺陷形成的区域中产生短路。 在一些实施例中，提供封装层以封装颗粒并防止它们从器件堆叠中排出，并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中，绝缘层包含一种或多种以下金属氧化物：氧化铝，氧化锌，氧化锡，氧化硅铝，氧化铈，氧化钨，氧化镍氧化物和氧化的氧化铟锡氧化物。 也可以使用硬质合金，氮化物，氧氮化物和碳氧化物。

    CONTROLLING TRANSITIONS IN OPTICALLY SWITCHABLE DEVICES
    9.
    发明专利
    CONTROLLING TRANSITIONS IN OPTICALLY SWITCHABLE DEVICES 未知

    公开(公告)号：CA3001233A1

    公开(公告)日：2017-04-13

    申请号：CA3001233

    申请日：2016-10-06

    Applicant: VIEW INC

    Inventor： JACK GORDON ,  KAILASAM SRIDHAR K ,  BROWN STEPHEN C ,  PRADHAN ANSHU A

    IPC: G09G3/19 ,  G02F1/163

    Abstract: Aspects of this disclosure concern controllers and control methods for applying a drive voltage to bus bars of optically switchable devices such as electrochromic devices. Such devices are often provided on windows such as architectural glass. In certain embodiments, the applied drive voltage is controlled in a manner that efficiently drives an optical transition over the entire surface of the electrochromic device. The drive voltage is controlled to account for differences in effective voltage experienced in regions between the bus bars and regions proximate the bus bars. Regions near the bus bars experience the highest effective voltage. In some cases, feedback may be used to monitor an optical transition. In these or other cases, a group of optically switchable devices may transition together over a particular duration to achieve approximately uniform tint states over time during the transition.

    Defect-mitigation layers in electrochromic devices
    10.
    发明专利
    Defect-mitigation layers in electrochromic devices 未知

    公开(公告)号：AU2014214738A1

    公开(公告)日：2015-08-13

    申请号：AU2014214738

    申请日：2014-02-07

    Applicant: VIEW INC

    Inventor： KAILASAM SRIDHAR K ,  FRIEDMAN ROBIN ,  GILLASPIE DANE ,  PRADHAN ANSHU A ,  ROZBICKI ROBERT T ,  MEHTANI DISHA

    IPC: G02F1/15

    Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

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