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公开(公告)号：DE2543869A1
公开(公告)日：1976-04-29
申请号：DE2543869
申请日：1975-10-01
Applicant: XEROX CORP
Inventor： STREIFER WILLIAM , SCIFRES DONALD R , BURNHAM ROBERT D
Abstract: A distributed feedback, (DFB) electrically pumped diode laser in which the spacing of the periodic structure within the diode is selected to optimize the interaction between the periodic structure and the electromagnetic waves in the diode laser. The degree to which the waves interact with the periodic structure is described mathematically by a coupling constant K, with larger values of K corresponding to lower gains required to produce laser operation. It is shown that in DFB diode lasers higher order transverse modes have a higher coupling constant K with the periodic structure than does the lowest order transverse mode and thus the higher order transverse modes will lase more easily than the lowest order transverse mode.
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公开(公告)号：DE2540159A1
公开(公告)日：1976-04-22
申请号：DE2540159
申请日：1975-09-09
Applicant: XEROX CORP
Inventor： STREIFER WILLIAM , SCIFRES DONALD R , BURNHAM ROBERT D
Abstract: A heterojunction diode laser which produces a highly collimated, polarized light beam perpendicular to the plane of the PN junction of the laser rather than through cleaved end faces in the plane of the PN junction. The diode laser includes a periodic structure which is buried at a heterojunction interface and in contact with a light waveguide layer. The periodic structure acts to produce the feedback necessary for lasing. If the spacing of the teeth of the periodic structure are an integer number of wavelengths of the light photons produced in the laser, the light beam exits at an angle perpendicular to the plane of the PN junction. If a tooth spacing is chosen that is not equal to an integer number of wavelengths of the light photons produced in the laser, the light beam may emerge from the diode at an angle other than the normal with the specific angle determined by the particular tooth spacing. To increase output intensity, the ends of the laser perpendicular to the plane of the PN junction and parallel to the teeth of the periodic structure may be cleaved and coated with a highly light reflective film.
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公开(公告)号：DE3750076T2
公开(公告)日：1995-01-05
申请号：DE3750076
申请日：1987-11-18
Applicant: XEROX CORP
Inventor： EPLER JOHN E , BURNHAM ROBERT D
IPC: H01S5/00 , H01L21/18 , H01L21/20 , H01L21/24 , H01L21/263 , H01L21/268 , H01S5/20 , H01S5/34 , H01S5/40 , H01S3/19
Abstract: An energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity-induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. The invention provides impurity incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.
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公开(公告)号：DE3689180D1
公开(公告)日：1993-11-25
申请号：DE3689180
申请日：1986-05-14
Applicant: XEROX CORP
Inventor： THORNTON ROBERT L , BURNHAM ROBERT D
Abstract: @ A phased array semiconductor laser provides fundamental or preferred first supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity-induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding- layer, which is followed by spatially-disposed impurity-induced disordering regions extending through the superlattice to form spatial regions capable of providing higher gain compared with adjacent regions without inpurity induced disordering contain unspoiled superiattice regions that provide higher real index waveguiding compared with the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared with the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred first supermode operation.
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公开(公告)号：DE3688002D1
公开(公告)日：1993-04-22
申请号：DE3688002
申请日：1986-05-27
Applicant: XEROX CORP
Inventor： BURNHAM ROBERT D , PAOLI THOMAS L , SCIFRES DONALD R , STREIFER WILLIAM
IPC: H01S5/00 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/20 , H01S5/40 , H01S3/19 , H01S3/18 , H01L33/00 , H01S3/085 , H01S3/101 , H01S3/103 , H01S3/25
Abstract: A hybrid index/gain-guided semiconductor laser (10) has a gain guide type body with index waveguide attributes characterised by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provides regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region. By varying the pumping current to the regions of the axially-offset current confinement means, one can selectively change the refractive index differences established between the axially offset current confinement means regions and the optical cavity region therebetween. The primary and offset current confinement geometry may be utilized in single or multuple element lasers.
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Patent Agency Ranking
公开(公告)号：DE3477715D1
公开(公告)日：1989-05-18
申请号：DE3477715
申请日：1984-01-13
Applicant: XEROX CORP
Inventor： SCIFRES DONALD R , STREIFER WILLIAM , BURNHAM ROBERT D
Abstract: A semiconductor laser has a combination index- and gain-guiding region in the optical cavity (18) established between end facets (27, 28) of the laser.
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公开(公告)号：CA1194196A
公开(公告)日：1985-09-24
申请号：CA393643
申请日：1982-01-06
Applicant: XEROX CORP
Inventor： BURNHAM ROBERT D
Abstract: Various mask configurations and techniques tor their employment in a chemical vapor deposition system are disclosed These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may he either removed after device processing or formed as an integral part of the semiconductor device being fabrication. In either case semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication or semiconductor injection lasers are disclosed as examples or applications of the masking techniques.
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公开(公告)号：DE2965803D1
公开(公告)日：1983-08-04
申请号：DE2965803
申请日：1979-10-30
Applicant: XEROX CORP
Inventor： SCIFRES DONALD R , STREIFER WILLIAM , BURNHAM ROBERT D
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公开(公告)号：CA1132695A
公开(公告)日：1982-09-28
申请号：CA328067
申请日：1979-05-22
Applicant: XEROX CORP
Inventor： SCIFRES DONALD R , STREIFER WILLIAM , BURNHAM ROBERT D
Abstract: BEAM SCANNING USING RADIATION PATTERN DISTORTION A laser beam scanner in which a single-lobe propogates radiation pattern through an electrically variable asymmetric electrical charge distribution. Because the electrical charge distribution determines the real and imaginary parts of the refractive index of the material through which the radiation pattern propogates the radiation pattern may be deflected by changing the charge distribution profile.
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公开(公告)号：FR2493616A1
公开(公告)日：1982-05-07
申请号：FR8120291
申请日：1981-10-29
Applicant: XEROX CORP
Inventor： SCIFRES DONALD R , STREIFER WILLIAM , BURNHAM ROBERT D
Abstract: Heterostructure injection lasers include a combination optically coupled active and passive waveguide means forming an optically confining channel or strip between end facets. A passive or transparent waveguide means in the vicinity of the laser facets optically confines the radiation thereto in both dimensions transverse to the direction of propagation. The passive means is coupled to an active region of the laser which also optically confines the propagating radiation to the active region in both dimensions transverse to the direction of propagation. The active strip does not extend to the end facets of the laser. The combination active and passive means provides for high power, low divergence output beam, fundamental transverse mode control, lower operational current thresholds and the substantial elimination of laser astigmatism found in strip buried heterostructure lasers.
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