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    1.
    发明专利
    未知

    公开(公告)号：DE69217679T2

    公开(公告)日：1997-07-31

    申请号：DE69217679

    申请日：1992-01-08

    Applicant: XEROX CORP

    Inventor： PAOLI THOMAS L ,  EPLER JOHN E

    IPC: H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/34 ,  H01S5/40 ,  H01S3/19 ,  H01L33/00 ,  H01L21/268

    Abstract: A quantum wire (58) in a groove (40) in a semiconductor laser emits coherent radiation in a semiconductor laser structure. Linear array, vertical array and two-dimensional array multiple quantum wire semiconductor laser structures are also embodiments of the disclosed invention. Optical waveguides and reverse bias junctions can also be formed with the quantum wire semiconductor laser structures.

    5.
    发明专利
    未知

    公开(公告)号：DE68929069T2

    公开(公告)日：2000-02-10

    申请号：DE68929069

    申请日：1989-10-12

    Applicant: XEROX CORP

    Inventor： EPLER JOHN E ,  TREAT DAVID W ,  PAOLI THOMAS L

    IPC: C30B33/08 ,  H01L21/203 ,  H01L21/205 ,  H01L21/268 ,  H01S5/16 ,  H01S5/223 ,  H01S5/227

    Abstract: In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.

    6.
    发明专利
    未知

    公开(公告)号：DE69217679D1

    公开(公告)日：1997-04-10

    申请号：DE69217679

    申请日：1992-01-08

    Applicant: XEROX CORP

    Inventor： PAOLI THOMAS L ,  EPLER JOHN E

    IPC: H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/34 ,  H01S5/40 ,  H01S3/19 ,  H01L33/00 ,  H01L21/268

    Abstract: A quantum wire (58) in a groove (40) in a semiconductor laser emits coherent radiation in a semiconductor laser structure. Linear array, vertical array and two-dimensional array multiple quantum wire semiconductor laser structures are also embodiments of the disclosed invention. Optical waveguides and reverse bias junctions can also be formed with the quantum wire semiconductor laser structures.

    7.
    发明专利
    未知

    公开(公告)号：DE3750076T2

    公开(公告)日：1995-01-05

    申请号：DE3750076

    申请日：1987-11-18

    Applicant: XEROX CORP

    Inventor： EPLER JOHN E ,  BURNHAM ROBERT D

    IPC: H01S5/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/24 ,  H01L21/263 ,  H01L21/268 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40 ,  H01S3/19

    Abstract: An energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity-induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. The invention provides impurity incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.

    8.
    发明专利
    未知

    公开(公告)号：DE68929069D1

    公开(公告)日：1999-10-14

    申请号：DE68929069

    申请日：1989-10-12

    Applicant: XEROX CORP

    Inventor： EPLER JOHN E ,  TREAT DAVID W ,  PAOLI THOMAS L

    IPC: C30B33/08 ,  H01L21/203 ,  H01L21/205 ,  H01L21/268 ,  H01S5/16 ,  H01S5/223 ,  H01S5/227

    Abstract: In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.

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