公开(公告)号：JP2000307199A

公开(公告)日：2000-11-02

申请号：JP2000104311

申请日：2000-04-06

Applicant: XEROX CORP

Inventor： VAN DE WALLE CHRISTIAN G ,  BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide an asymmetric optical waveguide nitride laser diode structure which does not require a p-type waveguide layer nor tunnel barrier layer containing aluminum in a large amount. SOLUTION: An asymmetric optical waveguide nitride laser diode structure 400 has an active layer 120 having first and second surfaces, a transition layer 429 which is brought into contact with the first surface of the active layer 120, a p-type clad layer 130 adhered adjacently to the transition layer 429, and an n-type layer 116 which is brought into contact with the second surface of the active layer 120.

公开(公告)号：JP2012089895A

公开(公告)日：2012-05-10

申请号：JP2012022808

申请日：2012-02-06

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： DAVID P BAUER ,  KNEISSL MICHAEL A ,  LINDA T ROMANO ,  PAOLI THOMAS L ,  VAN DE WALLE CHRISTIAN G

IPC: H01S5/223 ,  H01S5/227 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01S5/32341 ,  H01S5/2004 ,  H01S5/2275 ,  H01S2301/18 ,  H01S2304/00

Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation.SOLUTION: The index guide type buried heterostructure nitride laser diode structure 100 has a ridge structure 111 having first, second and third faces, clad structures 121, clad layers 125, and a multiple quantum well structure 145 interposed between the clad structures 121 and the clad layers 125, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111 and having an opening for electrical contact to the third face of the ridge structure 111.

Abstract translation: 要解决的问题：提供具有更强的模式稳定性和低阈值电流操作的激光二极管。 解决方案：引导型掩埋异质结氮化物激光二极管结构100具有脊状结构111，其具有第一，第二和第三面，包层结构121，包覆层125和插入在包层结构121之间的多量子阱结构145 并且包覆层125和存在于脊结构111的第一，第二和第三表面上的掩埋层155，并且具有用于与脊结构111的第三面电接触的开口。（C） 2012年，JPO＆INPIT

公开(公告)号：JP2010212738A

公开(公告)日：2010-09-24

申请号：JP2010149348

申请日：2010-06-30

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： CHUA CHRISTOPHER L ,  KNEISSL MICHAEL A ,  BOUR DAVID P

IPC: H01S5/183 ,  H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01L33/465 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a distributed Bragg reflector (DBR) on both sides of a nitride-based resonator semiconductor structure.
SOLUTION: The nitride-based resonator semiconductor structure 140 with a first distributed Bragg reflector 122 is provided on a sapphire substrate. A second substrate 128 is bonded to the first distributed Bragg reflector 122. The sapphire substrate is removed by laser-assisted epitaxial lift-off. A second Bragg reflector 142 is provided on the semiconductor structure opposite the first distributed Bragg reflector 122 having a VCSEL structure.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：在氮化物基谐振器半导体结构的两侧提供分布式布拉格反射器（DBR）。 解决方案：具有第一分布式布拉格反射器122的氮化物基谐振器半导体结构140设置在蓝宝石衬底上。 第二衬底128结合到第一分布式布拉格反射器122.通过激光辅助外延剥离去除蓝宝石衬底。 第二布拉格反射器142设置在与具有VCSEL结构的第一分布式布拉格反射器122相对的半导体结构上。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004198420A

公开(公告)日：2004-07-15

申请号：JP2003415635

申请日：2003-12-12

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： WONG WILLIAM S ,  CHABINYC MICHAEL L ,  SUTEIIBUN II REDEI ,  KNEISSL MICHAEL A ,  TEEPE MARK R

IPC: G01N35/08 ,  B01L3/00 ,  B29C39/10 ,  B29L31/34 ,  B81C1/00 ,  G01N21/01 ,  G01N37/00

CPC classification number: B81C1/00492 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0654 ,  B01L2300/0663 ,  B81B2201/058 ,  G01N21/01 ,  H01L2221/68363

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive and easy microsystem manufacturing method wherein a micro fluidic channel aligned with another electronic or photoelectronic elements is integrated on one platform.
SOLUTION: The present invention provides an integration method for microelectronic devices and the micro channel. The method is an inexpensive method for integrating a device group not adaptable each other in usual manufacture, the microchannel, microelectronic structure, for example, an electro-optic light source, and a detector or an MEMS device into one integrated structure.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003249453A

公开(公告)日：2003-09-05

申请号：JP2002358811

申请日：2002-12-11

Applicant: XEROX CORP

Inventor： WONG WILLIAM S ,  BIEGELSEN DAVID K ,  KNEISSL MICHAEL A

IPC: C30B25/04 ,  C23C16/34 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/68 ,  H01L23/48 ,  H01S5/02 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To manufacture a gallium nitride substrate used for a nitride-based semiconductor structure. SOLUTION: First, a gallium nitride layer is grown on a sapphire substrate. On the gallium nitride layer, a mask layer such as photoresist, a metal layer, or a dielectric layer is pattern-formed in a stripe. Then, the gallium nitride layer is etched up to the sapphire substrate for forming a trench, and the section region of gallium nitride is provided on the sapphire substrate. Alternatively, on the sapphire substrate, a selection region is grown again on the gallium nitride layer that is pattern-formed in advance, thus obtaining the trench. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003218454A

公开(公告)日：2003-07-31

申请号：JP2002369168

申请日：2002-12-20

Applicant: XEROX CORP

Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A

IPC: H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a graded semiconductor layer for reducing the threshold voltage of a nitride-based laser diode structure. SOLUTION: The graded semiconductor layer between a GaN layer 120 and an AlGaN layer 118 of the nitride-based semiconductor laser structure 100 reduces the threshold voltage of the laser structure by reducing the electric potential barrier at an interface between the GaN layer 120 and the AlGaN layer 118. The graded semiconductor layer can be a plurality of AlGaN layers with increasing aluminum content to form step graded layers. A continuous graded semiconductor layer will linearly increase the aluminum content in a single layer. A digital graded semiconductor layer will have a super lattice of alternating GaN quantum wells and AlGaN barrier layers, with the GaN quantum wells decreasing in thickness as the AlGaN barriers increase in thickness. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH11340587A

公开(公告)日：1999-12-10

申请号：JP12519499

申请日：1999-04-30

Applicant: XEROX CORP

Inventor： HOFSTETTER DANIEL ,  DUNNROWICZ CLARENCE J ,  SUN DECAI ,  BRINGANS ROSS D ,  KNEISSL MICHAEL A

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a monolithic multiple laser structure which includes the capability of emitting a multiple wavelength laser beam, having a wide range of infrared to red and blue for wavelength spectrum and close intervals. SOLUTION: A red/infrared parallel type laser structure 100 is bonded to a blue laser structure 200 with solder bumps 402 and 404 by a flip-chip method, to form a red/blue/infrared integrated laser structure 400 integrated by a hybrid method. This method allows a laser array structure having laser elements of different wavelengths to be manufactured, even in semiconductor materials which are not compatible with a manufacturing method by etching and regrowth.