中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

179 records (took 0.019 seconds)

    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    31.
    发明授权
    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 有权

    公开(公告)号：EP3118894B1

    公开(公告)日：2018-01-31

    申请号：EP16188068.7

    申请日：2013-05-16

    Applicant: Apple Inc.

    Inventor： GOLDA, Dariusz ,  BIBL, Andreas

    IPC: H01L21/677 ,  B81C1/00 ,  B65G49/07

    CPC classification number: B81C99/0025 ,  B81C2201/0194 ,  H01L21/67144 ,  H01L24/75 ,  H01L2224/7598

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure

    PROCEDE DE FABRICATION D'UN DISPOSITIF ELECTROMECANIQUE ET DISPOSITIF CORRESPONDANT
    32.
    发明公开
    PROCEDE DE FABRICATION D'UN DISPOSITIF ELECTROMECANIQUE ET DISPOSITIF CORRESPONDANT 审中-公开

    公开(公告)号：EP3218302A1

    公开(公告)日：2017-09-20

    申请号：EP15791617.2

    申请日：2015-11-09

    Applicant: Tronic's Microsystems

    Inventor： COLLET, Joël

    IPC: B81C1/00 ,  B81C99/00

    CPC classification number: B81B3/0051 ,  B81C1/00182 ,  B81C1/00333 ,  B81C2201/0194 ,  B81C2203/051 ,  G01L9/0042

    Abstract: The invention relates to an electromechanical device characterised in that it comprises a stack made up of an insulating layer (31) inserted between two solid layers (10, 30), and a micromechanical structure (60, 61) with predetermined thickness suspended above a recess (4) with predetermined depth, the recess (4) and the micromechanical structure (60, 61) making up one of the two solid layers (10, 30) of the stack, and the insulating layer (31) making up the bottom of said recess (4).

    Abstract translation: 本发明涉及一种机电装置，其特征在于，其包括由插入在两个固体层（10,30）之间的绝缘层（31）和具有预定厚度的微机械结构（60,61） （4），所述凹部（4）和所述微机械结构（60,61）构成所述堆叠的所述两个固体层（10,30）中的一个，并且所述绝缘层（31）构成所述堆叠的底部 所述凹槽（4）。

    TRANSFER METHOD, MANUFACTURING METHOD, DEVICE AND ELECTRONIC APPARATUS OF MEMS
    33.
    发明公开
    TRANSFER METHOD, MANUFACTURING METHOD, DEVICE AND ELECTRONIC APPARATUS OF MEMS 审中-公开
    ÜBERTRAGUNGSVERFAHREN，HERSTELLUNGSVERFAHREN，VORRICHTUNG UND ELEKTRONISCHE VORRICHTUNG VON MEMS

    公开(公告)号：EP3207568A4

    公开(公告)日：2017-09-20

    申请号：EP15886930

    申请日：2015-04-01

    Applicant: GOERTEK INC

    Inventor： ZOU QUANBO ,  WANG ZHE

    IPC: H01L25/16 ,  H01L25/00

    CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L25/50 ,  H01L2224/81005 ,  H01L2924/1461

    Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

    Abstract translation: MEMS的传输方法，制造方法，装置和电子设备。 该MEMS传输方法包括：在激光透明载体的第一表面上沉积激光吸收层; 在激光吸收层上形成MEMS结构; 将MEMS结构附接到接收器; 并且从载体侧执行激光剥离以去除载体。 可以以简单，低成本的方式实现高质量MEMS结构的转移。

    Mechanoelectric transducer and manufacturing method of same
    36.
    发明专利
    Mechanoelectric transducer and manufacturing method of same 有权
    机电传感器及其制造方法

    公开(公告)号：JP2010035155A

    公开(公告)日：2010-02-12

    申请号：JP2009148014

    申请日：2009-06-22

    Applicant: Canon Inc ,  キヤノン株式会社

    Inventor： KATO AYAKO ,  CHO KENROKU

    IPC: H04R31/00

    CPC classification number: B81C1/0038 ,  B81C2201/0194 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/49009 ,  Y10T29/4908

    Abstract: PROBLEM TO BE SOLVED: To quickly remove a handling member from a substrate to be processed by reducing probability that a membrane is damaged when handling or machining the substrate to be processed. SOLUTION: In the handling member, a groove, which composes one portion of a channel communicating with the outside while an element is being fixed, is formed on a surface fixed to the element. The handling member is fixed so that a cleavage direction of a vibrating membrane crosses the edge direction of the groove of the handling member. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：在处理或加工待处理的基板时，通过降低膜损坏的可能性，从处理基板快速移除处理部件。 解决方案：在处理构件中，在固定元件的表面上形成有构成一个元件与外部连通的通道的一部分的槽。 处理部件被固定成使得振动膜的裂开方向与处理部件的槽的边缘方向相交。 版权所有（C）2010，JPO＆INPIT

    STRUCTURES AND METHODS FOR CONTROLLING RELEASE OF TRANSFERABLE SEMICONDUCTOR STRUCTURES
    39.
    发明公开
    STRUCTURES AND METHODS FOR CONTROLLING RELEASE OF TRANSFERABLE SEMICONDUCTOR STRUCTURES 审中-公开

    公开(公告)号：EP3365271A1

    公开(公告)日：2018-08-29

    申请号：EP16795238.1

    申请日：2016-10-21

    Applicant: X-Celeprint Limited

    Inventor： BOWER, Christopher ,  MEITL, Matthew

    IPC: B81C99/00

    CPC classification number: B81C99/008 ,  B81C2201/0194 ,  B81C2203/054

    Abstract: The disclosed technology relates generally to methods and systems for controlling the release of micro devices. Prior to transferring micro devices to a destination substrate, a native substrate is formed with micro devices thereon. The micro devices can be distributed over the native substrate and spatially separated from each other by an anchor structure. The anchors are physically connected/secured to the native substrate. Tethers physically secure each micro device to one or more anchors, thereby suspending the micro device above the native substrate. In certain embodiments, single tether designs are used to control the relaxation of built-in stress in releasable structures on a substrate, such as Si (1 0 0). Single tether designs offer, among other things, the added benefit of easier break upon retrieval from native substrate in micro assembly processes. In certain embodiments, narrow tether designs are used to avoid pinning of the undercut etch front.

    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    40.
    发明公开
    MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 有权
    麻醉药品 - ÜBERTRAGUNGSKOPFMIT EINER SILICIUMELEKTRODE

    公开(公告)号：EP3118894A1

    公开(公告)日：2017-01-18

    申请号：EP16188068.7

    申请日：2013-05-16

    Applicant: Apple Inc.

    Inventor： GOLDA, Dariusz ,  BIBL, Andreas

    IPC: H01L21/677 ,  B81C1/00 ,  B65G49/07

    CPC classification number: B81C99/0025 ,  B81C2201/0194 ,  H01L21/67144 ,  H01L24/75 ,  H01L2224/7598

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面

Patent Agency Ranking