公开(公告)号：KR20180041064A

公开(公告)日：2018-04-23

申请号：KR20170126998

申请日：2017-09-29

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： MIKAMI YOHEI

IPC: H01L31/107 ,  H01L31/0203 ,  H01L31/0232

CPC classification number: G01J1/0271 ,  G01J1/0214 ,  G01J1/0411 ,  G01J1/44 ,  G01J2001/4466

Abstract: (과제) 사양모듈길이가상이한경우에도가능한한 설계변경을하지않아도되도록개량된반도체수광모듈을제공한다. (해결수단) 반도체수광모듈(10)은, 스템(12)과, 스템(12)에씌워진캡(14)과, 캡(14)에겹쳐진홀더(16)와, 홀더(16)에끼워진리셉터클(18)을구비하고있다. 홀더(16)는, 캡(14)의렌즈(35)에씌워진본체부를갖고있다. 홀더(16)의본체부에는, 캡(14)의반대쪽으로부터본체부를관통하여렌즈(35)에도달하는개구(16a)가마련되어있다. 고정나사(20)가, 홀더(16)에마련된나사구멍(16b)에끼워지고, 고정나사(20)에있어서의나사본체부(20a)의나사끝이리셉터클(18)의측면에접하고있다.

公开(公告)号：EP3365975A1

公开(公告)日：2018-08-29

申请号：EP16790911.8

申请日：2016-10-20

Applicant: Universitat de Barcelona

Inventor： DIEGUEZ BARRIENTOS, Angel ,  ALONSO CASANOVAS, Oscar ,  CANALS GIL, Joan ,  VILELLA FIGUERAS, Eva

IPC: H03K5/1534 ,  H03K5/19

CPC classification number: G01J1/0238 ,  G01J1/46 ,  G01J2001/442 ,  G01J2001/4466 ,  H03K5/1534 ,  H03K5/19

Abstract: Signal processing method for histogram generation, and corresponding device and use. The method generates the histogram from a plurality of event detectors that generate event signals as a response to external events, and are connected to a current injection module which is connected to a plurality of capacitors, wherein each histogram bin is univocally assigned to a capacitor. The method includes: during an event time interval corresponding to a bin, the event detectors generate event signals as a response to external events; the current injection module detects said event signals and, for each event signal, generates a corresponding current signal, which is injected in a capacitor assigned to said bin, and stored therein; repeating steps for each successive bin of said histogram; and reading the charge accumulated in each of said capacitors.

公开(公告)号：EP3273478A1

公开(公告)日：2018-01-24

申请号：EP15885596.5

申请日：2015-12-14

Applicant: Hamamatsu Photonics K.K.

Inventor： KAMAKURA, Shogo ,  YAMADA, Ryuta ,  SATO, Kenichi

IPC: H01L27/146 ,  G01J1/02 ,  H01L27/144 ,  H01L31/10 ,  H01L31/107 ,  H04N5/369

CPC classification number: H01L31/02005 ,  G01J1/02 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/10 ,  H01L31/107 ,  H01L2224/05554 ,  H01L2224/32227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12043 ,  H01L2924/30105 ,  H04N5/369 ,  H01L2924/00014

Abstract: A semiconductor substrate IN includes a first region RS1 in which a plurality of pixels are disposed and a second region RS2 located inside the first region RS1 to be surrounded by the first region RS1 when viewed from a direction in which a principal surface INa and a principal surface 1Nb oppose each other. A through-hole TH penetrating through the semiconductor substrate IN is formed in the second region RS2 of the semiconductor substrate 1N. An electrode E3 disposed on a side of the principal surface INa of the semiconductor substrate IN and electrically connected to the plurality of pixels and an electrode E5 disposed on a side of a principal surface 20a of a mount substrate 20 are connected to each other via a bonding wire W1 inserted through the through-hole TH.

Abstract translation: 半导体基板IN具有配置有多个像素的第一区域RS1，以及从第一区域RS1的主面INa和主体的方向观察时位于第一区域RS1的内侧且被第一区域RS1包围的第二区域RS2 表面1Nb彼此相对。 贯穿半导体衬底1N的通孔TH形成在半导体衬底1N的第二区域RS2中。 布置在半导体基板1N的主表面INa侧并且电连接到多个像素的电极E3和布置在安装基板20的主表面20a侧的电极E5经由 通过贯通孔TH插入的接合线W1。

公开(公告)号：EP1329700A4

公开(公告)日：2011-03-23

申请号：EP00962814

申请日：2000-09-25

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUYAMA MOTOHIRO ,  KAWAI YOSHIHIKO ,  MORITA TETSUYA ,  OBA KOICHIRO

IPC: G01J1/44 ,  G01J1/42 ,  G01J11/00 ,  H01L31/10

CPC classification number: G01J1/44 ,  G01J2001/442 ,  G01J2001/4433 ,  G01J2001/444 ,  G01J2001/4466

公开(公告)号：EP1329700A1

公开(公告)日：2003-07-23

申请号：EP00962814.0

申请日：2000-09-25

Applicant: HAMAMATSU PHOTONICS K. K.

Inventor： SUYAMA, Motohiro, c/o Hamamatsu Photonics K.K. ,  KAWAI, Yoshihiko, c/o Hamamatsu Photonics K.K. ,  MORITA, Tetsuya, c/o Hamamatsu Photonics K.K. ,  OBA, Koichiro, c/o Hamamatsu Photonics K.K.

IPC: G01J1/44 ,  G01J1/42 ,  G01J11/00 ,  H01L31/10

CPC classification number: G01J1/44 ,  G01J2001/442 ,  G01J2001/4433 ,  G01J2001/444 ,  G01J2001/4466

Abstract: An optical measurement apparatus 10 primarily includes: a photon detection unit 12 for detecting incident photons, a time signal output unit 14 for outputting a time signal, and a storage unit 16 for storing the time signal outputted from the time signal output unit 14 when the photon detection unit 12 detects photons. The photon detection unit 12 includes a HPD 24 having a photocathode 24a and an APD 24b, a TZ amplifier 26, a peak holding circuit 28, and an A/D converter 30. The time signal output unit 14 includes a timer 32 and a counter 34. The storage unit 16 includes a comparator 36 and a memory 38. When photons impinge on the HPD 24, a trigger signal is outputted from the comparator 36, causing the photon-number outputted from the A/D converter 30 and the time data outputted from the counter 34 to be stored in the memory 38.

Abstract translation: 光学测量设备10主要包括：用于检测入射光子的光子检测单元12，用于输出时间信号的时间信号输出单元14以及用于存储时间信号输出单元14输出的时间信号的存储单元16 光子检测单元12检测光子。 光子检测部12具备具有光电阴极24a和APD24b的HPD24，TZ放大器26，峰值保持电路28以及A / D转换器30.时间信号输出部14具有计时器32和计数器 存储单元16包括比较器36和存储器38.当光子撞击HPD 24时，从比较器36输出触发信号，引起从A / D转换器30输出的光子数和时间数据 从计数器34输出以存储在存储器38中。

公开(公告)号：EP0456710A1

公开(公告)日：1991-11-21

申请号：EP90902805.0

申请日：1990-01-31

Applicant: YORK LIMITED

Inventor： DAKIN, John, Philip

IPC: G01J1

CPC classification number: G01J1/42 ,  G01J2001/442 ,  G01J2001/4466

Abstract: Un compteur de photons optiques comprend un amplificateur (14) alimentant un détecteur optique (16) couplé à un discriminateur (20) de hauteur d'impulsion. L'amplificateur peut être un laser à fibre optique, un amplificateur paramétrique ou un dispositif à semi-conducteurs.

公开(公告)号：WO2016135824A1

公开(公告)日：2016-09-01

申请号：PCT/JP2015/055037

申请日：2015-02-23

Applicant: 三菱電機株式会社

Inventor： 白井　聡 ,  野田　雅樹

IPC: H04B10/69

CPC classification number: H04B10/6911 ,  G01J1/44 ,  G01J2001/4406 ,  G01J2001/4466 ,  H01J40/14 ,  H03G3/20 ,  H03G3/3084 ,  H04B10/152 ,  H04B10/40 ,  H04B10/69

Abstract: 　光信号を受信する光受信装置は、与えられたバイアス信号によって受信感度が設定される複数のアバランシェフォトダイオードと、複数のアバランシェフォトダイオードに対応して設けられて、バイアス信号を得るための基準電圧のレベルを変換してバイアス信号を生成し、対応するアバランシェフォトダイオードへ与える複数のレベル変換部と、光受信装置の温度に対応した第１の制御信号を生成し、第１の制御信号によって複数のレベル変換部のレベル変換量を制御する制御部と、を含む。

Abstract translation: 接收光信号的该光接收装置包括：多个雪崩光电二极管，其中通过给定的偏置信号设置接收灵敏度; 对应于雪崩光电二极管提供的多个电平转换单元通过转换用于获得偏置信号的参考电压电平而产生偏置信号，并将该信号传输到相应的雪崩光电二极管; 以及控制单元，其产生对应于所述光接收装置的温度的第一控制信号，并且通过所述第一控制信号来控制所述电平转换单元的电平转换量。

公开(公告)号：WO2016003451A1

公开(公告)日：2016-01-07

申请号：PCT/US2014/045178

申请日：2014-07-02

Applicant: THE JOHNS HOPKINS UNIVERSITY ,  ANDREOU, Andreas, G. ,  LIN, Joseph, H. ,  POULIQUEN, Philippe, O. ,  RIZK, Charbel, G.

Inventor： ANDREOU, Andreas, G. ,  LIN, Joseph, H. ,  POULIQUEN, Philippe, O. ,  RIZK, Charbel, G.

IPC: G01J1/42

CPC classification number: G01J1/44 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L31/02027 ,  H01L31/035272 ,  H01L31/107

Abstract: A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

Abstract translation: 光电检测电路包括雪崩光电二极管和模式切换电路，其可以被配置为在线性模式和盖革格模式之间选择性地切换光电检测电路的操作模式。 光电检测电路还可以包括淬火电路，其被配置为当光电检测电路以盖革模式操作时，响应于雪崩事件来猝灭和复位雪崩光电二极管。 光电检测电路可以另外包括集成电路，其被配置为在光线检测电路以线性模式操作时将光电二极管的光电流输出集成并产生积分的电荷单元。 光检测电路还可以包括计数器，其配置为当光电检测电路以盖革模式操作时对由雪崩光电二极管输出的脉冲进行计数，并且当光电检测电路以线性模式操作时，对由积分电路产生的积分电荷单元进行计数。

公开(公告)号：WO1990008946A1

公开(公告)日：1990-08-09

申请号：PCT/GB1990000138

申请日：1990-01-31

Applicant: YORK LIMITED ,  DAKIN, John, Philip

Inventor： YORK LIMITED

IPC: G01J01/42

CPC classification number: G01J1/42 ,  G01J2001/442 ,  G01J2001/4466

Abstract: An optical photon counter includes an optical amplifier (14) which feeds an optical detector (16) coupled to a pulse height discriminator (20). The amplifier may be a fibre optic laser, a parametric amplifier or a semiconductor device.

公开(公告)号：WO1988004034A2

公开(公告)日：1988-06-02

申请号：PCT/GB1987000837

申请日：1987-11-23

Applicant: THE SECRETARY OF STATE FOR DEFENCE IN HER ... ,  JONES, Robin ,  RIDLEY, Kevin, Dennis

Inventor： THE SECRETARY OF STATE FOR DEFENCE IN HER ...

IPC: G01J01/44

CPC classification number: G01J1/44 ,  G01J2001/442 ,  G01J2001/4466

Abstract: An avalanche photodiode quenching circuit (10) comprises a low value photodiode series resistor (20) and a comparator amplifier (40). The comparator (40) compares the photodiode potential with a reference voltage and changes state rapidly after initiation of a photodiode avalanche. The photodiode (12) is actively quenched by taking its potential below breakdown. This is achieved by a fast-switching transistor (30) activated by avalanche detection at the comparator. A further fast-switching transistor (42) is arranged to reset the comparator input (38) after a preset delay following avalanche detection. The photodiode (12) recharges passively through the series resistor (20) at a rapid rate since this resistor has a low value. The transistors (30) and (42) are diactivated by comparator reset, the latter after the preset delay once more, and are isolated from the photodiode (12) during recharge by diodes (16) and (18). The invention avoids the use of active photodiode reset pulses, and has constant output pulse width and well-defined dead-time.

Abstract translation: 雪崩光电二极管猝灭电路（10）包括低值光电二极管串联电阻（20）和比较放大器（40）。 比较器（40）将光电二极管电位与参考电压进行比较，并且在光电二极管雪崩开始之后迅速改变状态。 光电二极管（12）通过将其潜在电击降低而被主动淬火。 这通过在比较器处由雪崩检测激活的快速开关晶体管（30）来实现。 布置另外的快速开关晶体管（42）以在雪崩检测之后的预设延迟之后复位比较器输入（38）。 光电二极管（12）由于该电阻器具有较低的值而以快速的速率对被串联电阻器（20）进行无源充电。 晶体管（30）和（42）通过比较器复位而被去激活，后者在预设延迟之后再次被二极管（16）和（18）与再光电二极管（12）隔离。 本发明避免使用有源光电二极管复位脉冲，并且具有恒定的输出脉冲宽度和明确的死区时间。