公开(公告)号：US20150362763A1

公开(公告)日：2015-12-17

申请号：US14731235

申请日：2015-06-04

Applicant: Virginia D. Wheeler ,  Francis J. Kub ,  Charles R. Eddy, JR. ,  Marko J. Tadjer

Inventor： Virginia D. Wheeler ,  Francis J. Kub ,  Charles R. Eddy, JR. ,  Marko J. Tadjer

IPC: G02F1/01 ,  C23C16/455 ,  G02B1/14 ,  G02B1/18 ,  G02B1/11

CPC classification number: G01J5/20 ,  C23C16/45525 ,  G01J5/024 ,  G01J5/0275 ,  G01J5/084 ,  G01J5/0853 ,  G01J5/089 ,  G01J2005/204 ,  G02B1/10 ,  G02B1/11 ,  G02B1/14 ,  G02B1/18 ,  G02B5/003 ,  G02F1/0147 ,  H01L37/00 ,  Y10T156/10

Abstract: A smart window comprising a transparent substrate, a transparent low emittance layer on the transparent substrate, a variable emittance material layer on the substrate or transparent low emittance layer, and a protection material layer on the variable emittance material layer.

Abstract translation: 一种智能窗，包括透明基板，透明基板上的透明低辐射层，基板上的可变散射材料层或透明低辐射率层，以及可变发射体材料层上的保护材料层。

公开(公告)号：US20140239179A1

公开(公告)日：2014-08-28

申请号：US13775217

申请日：2013-02-24

Applicant: Vlad Joseph Novotny ,  Howard Woo

Inventor： Vlad Joseph Novotny ,  Howard Woo

IPC: G01J5/20 ,  H01L31/09 ,  H01L31/18

CPC classification number: G01J5/20 ,  G01J5/0225 ,  G01J5/048 ,  G01J2005/204 ,  H01L31/0203 ,  H01L31/09 ,  H01L31/18

Abstract: The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

Abstract translation: 描述了具有单独密封件的悬浮微型元件阵列的架构，设计和制造。 读出集成电路与悬挂元件整体集成，用于低寄生效应和高信噪比检测其电阻变化。 单独密封的悬浮微元件阵列与包含非易失性存储器的信号处理芯片组合，具有所有元件的灵敏度校准和非功能元件之间的插值。 当微元件是红外光吸收器时，图像分析和识别被嵌入处理芯片中，以形成用于红外相机的红外成像解决方案。

公开(公告)号：US20120026337A1

公开(公告)日：2012-02-02

申请号：US12844124

申请日：2010-07-27

Applicant: Pierre Boulanger ,  Marcel Tremblay ,  Jim Goodland ,  Barbara Sharp ,  Farhad Mirbod ,  Theodore R. Hoelter

Inventor： Pierre Boulanger ,  Marcel Tremblay ,  Jim Goodland ,  Barbara Sharp ,  Farhad Mirbod ,  Theodore R. Hoelter

IPC: H04N5/33 ,  B23P11/00

CPC classification number: G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

Abstract: An infrared camera architecture includes, for an embodiment, an infrared detector, a substrate, a plurality of electrical components coupled to the substrate, and a pedestal made of a thermally conductive material and having a leg coupled to the substrate. The infrared detector is supported by and thermally coupled to the pedestal, with the pedestal thermally isolating the infrared detector from the plurality of electrical components.

Abstract translation: 对于一个实施例，红外线照相机结构包括红外检测器，衬底，耦合到衬底的多个电气部件，以及由导热材料制成并具有连接到衬底的腿部的基座。 红外检测器由支架支撑并热耦合到基座，基座将红外检测器与多个电气部件热隔离。

公开(公告)号：WO2015195562A1

公开(公告)日：2015-12-23

申请号：PCT/US2015/035849

申请日：2015-06-15

Applicant: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY ,  WHEELER, Virginia, D. ,  KUB, Francis, J. ,  EDDY, Charles, R. ,  TADJER, Marko, J.

Inventor： WHEELER, Virginia, D. ,  KUB, Francis, J. ,  EDDY, Charles, R. ,  TADJER, Marko, J.

IPC: H01L21/20 ,  H01L31/101

CPC classification number: G01J5/20 ,  C23C16/45525 ,  G01J5/024 ,  G01J5/0275 ,  G01J5/084 ,  G01J5/0853 ,  G01J5/089 ,  G01J2005/204 ,  G02B1/10 ,  G02B1/11 ,  G02B1/14 ,  G02B1/18 ,  G02B5/003 ,  G02F1/0147 ,  H01L37/00 ,  Y10T156/10

Abstract: This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.

Abstract translation: 本公开描述了一种用于红外辐射检测优化的微测辐射热计传感器元件和微测辐射计阵列成像装置，其使用用于温度敏感电阻器的氧化钒材料层（VOx）的原子层沉积（ALD）来实现。

公开(公告)号：WO2014031614A1

公开(公告)日：2014-02-27

申请号：PCT/US2013/055752

申请日：2013-08-20

Applicant: ROBERT BOSCH GMBH ,  YAMA, Gary ,  FEYH, Ando ,  SAMARAO, Ashwin ,  PURKL, Fabian ,  O'BRIEN, Gary

Inventor： YAMA, Gary ,  FEYH, Ando ,  SAMARAO, Ashwin ,  PURKL, Fabian ,  O'BRIEN, Gary

IPC: G01J5/02 ,  G01J5/20 ,  H01L27/144

CPC classification number: H01L31/02019 ,  G01J5/023 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/20 ,  G01J2005/204 ,  H01L27/1446

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer (106, 108, 110) on a substrate (100) during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer (130) is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer (106, 108, 110) beneath the absorber layer is removed to form a gap (G1) over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O 2 plasma etching process.

Abstract translation: 制造半导体器件的方法包括在互补金属氧化物半导体（CMOS）工艺期间在衬底（100）上形成至少一个牺牲层（106,108,110）。 在所述至少一个牺牲层的顶部上沉积吸收层（130）。 吸收层下方的至少一个牺牲层（106,108,110）的一部分被去除以形成间隙（G1），吸收层的一部分悬挂在该间隙上。 牺牲层可以是CMOS工艺的氧化物，其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。 牺牲层也可以是聚合物层，其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。

公开(公告)号：US11761820B2

公开(公告)日：2023-09-19

申请号：US17325827

申请日：2021-05-20

Applicant: LYNRED

Inventor： Nicolas Boudou ,  Alexia Gorecki

IPC: H04N5/33 ,  G01J5/02 ,  H01L27/146 ,  G01J5/0803 ,  G01J5/20 ,  G01J5/0808

CPC classification number: G01J5/0225 ,  G01J5/0803 ,  G01J5/0808 ,  G01J5/20 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H04N5/33 ,  G01J2005/202 ,  G01J2005/204

Abstract: An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

公开(公告)号：US20170207265A1

公开(公告)日：2017-07-20

申请号：US15400278

申请日：2017-01-06

Applicant: Ulis ,  Commissariat A L'Energie Atomique Et Aux Energies Alternatives

Inventor： Michel VILAIN ,  Jérôme FAVIER ,  Jean-Jacques YON ,  Laurent FREY

IPC: H01L27/146 ,  G01J5/20

CPC classification number: H01L27/14618 ,  G01J5/024 ,  G01J5/045 ,  G01J5/20 ,  G01J2005/204 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14687

Abstract: A method of manufacturing a detector capable of detecting a wavelength range [λ8; λ14] centered on a wavelength λ10, including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [Δ8; λ14], the second and third optical structures having equivalent refraction indexes at wavelength λ10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

公开(公告)号：US09513172B2

公开(公告)日：2016-12-06

申请号：US13750709

申请日：2013-01-25

Applicant: FLIR Systems, Inc.

Inventor： Gregory A. Carlson ,  Alex Matson ,  Andrew Sharpe ,  Davey Beard ,  Paul Schweikert ,  Robert Simes

IPC: G01J5/10 ,  G01J5/04 ,  H04N5/225 ,  H04N5/33 ,  G01J5/02 ,  G01J5/20 ,  G01J1/02 ,  G01J1/44 ,  H01L27/146 ,  G01J5/00

CPC classification number: G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

Abstract: An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

Abstract translation: 用于例如红外相机的红外检测器包括具有红外检测器阵列的基板和与设置在其上表面上的阵列互连的读出集成电路，用于一个或多个实施例。 大致平面的窗口在阵列上方间隔开，窗口基本上对于红外光是透明的。 台面粘合到窗户。 台面已经封闭了边缘侧壁，其设置在窗口的下表面的外周边和基板的上表面的外周之间，并且在窗口和包围阵列的阵列之间限定了封闭的空腔。 焊接密封件将台面连接到基板以便密封空腔。

公开(公告)号：US09029773B2

公开(公告)日：2015-05-12

申请号：US13775217

申请日：2013-02-24

Applicant: Vlad Joseph Novotny ,  Howard Woo

Inventor： Vlad Joseph Novotny ,  Howard Woo

IPC: G01J5/02 ,  G01J5/20 ,  H01L31/09 ,  H01L31/18

CPC classification number: G01J5/20 ,  G01J5/0225 ,  G01J5/048 ,  G01J2005/204 ,  H01L31/0203 ,  H01L31/09 ,  H01L31/18

Abstract: The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

Abstract translation: 描述了具有单独密封件的悬浮微型元件阵列的架构，设计和制造。 读出集成电路与悬挂元件整体集成，用于低寄生效应和高信噪比检测其电阻变化。 单独密封的悬浮微元件阵列与包含非易失性存储器的信号处理芯片组合，具有所有元件的灵敏度校准和非功能元件之间的插值。 当微元件是红外光吸收器时，图像分析和识别被嵌入处理芯片中，以形成用于红外相机的红外成像解决方案。

公开(公告)号：US20140054740A1

公开(公告)日：2014-02-27

申请号：US13969828

申请日：2013-08-19

Applicant: Robert Bosch GmbH

Inventor： Gary Yama ,  Ando Feyh ,  Ashwin Samarao ,  Fabian Purkl ,  Gary O'Brien

IPC: H01L31/02

CPC classification number: H01L31/02019 ,  G01J5/023 ,  G01J5/0235 ,  G01J5/024 ,  G01J5/20 ,  G01J2005/204 ,  H01L27/1446

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Abstract translation: 制造半导体器件的方法包括在互补金属氧化物半导体（CMOS）工艺期间在衬底上形成至少一个牺牲层。 在所述至少一个牺牲层的顶部上沉积吸收层。 吸收层下面的至少一个牺牲层的一部分被去除以形成一个间隙，吸收层的一部分悬挂在该间隙上。 牺牲层可以是CMOS工艺的氧化物，其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。 牺牲层也可以是聚合物层，其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。