公开(公告)号：WO2011060091A1

公开(公告)日：2011-05-19

申请号：PCT/US2010/056264

申请日：2010-11-10

Applicant: SOLEXEL, INC. ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M.

Inventor： KAPUR, Pawan ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/00

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present disclosure enables high-volume cost effective production of three- dimensional thin film solar cell (3-D TFSC) substrates. First, the present disclosure discloses pyramid-like unit cell structure 16 and 50 which enable epitaxial growth through their open pyramidal structure. The present disclosure than gives four 3-D TFSC embodiments 70, 82, 100, and 110 which may combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, front and back metal contacts allows simple processing. Other embodiments disclose a selective emitter, selective backside metal contact, and front-side SiN ARC layers. Several processing methods including process flows 150, 200, 250, 300, and 350 enable production of these 3-D TFSC. Further, the present disclosure enables higher throughput through the use of dual sided template 400. By processing the substrate in the template, the present disclosure increases yield and reduces processing steps.

Abstract translation: 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 首先，本公开公开了金字塔形单元结构16和50，其能够通过其开放金字塔形结构进行外延生长。 本公开不是给出可以根据需要组合的四个三维TFSC实施例70,82,100和110。 在发射器，前后金属触点上具有衬底，发射极，氧化的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背侧金属接触和前侧SiN ARC层。 包括工艺流程150,200,250,300和350的几种处理方法使得能够生产这些3-D TFSC。 此外，本公开通过使用双面模板400可实现更高的生产量。通过在模板中处理衬底，本公开增加了产量并降低了处理步骤。

公开(公告)号：WO2010102306A1

公开(公告)日：2010-09-10

申请号：PCT/US2010/026570

申请日：2010-03-08

Applicant: SOLEXEL, INC. ,  RICOLCOL, Rafael ,  KRAMER, Joe ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

Inventor： RICOLCOL, Rafael ,  KRAMER, Joe ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

IPC: H01L21/4763

CPC classification number: H01L21/30608 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.

Abstract translation: 本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。 该方法包括在模板上形成共形牺牲多孔半导体层。 接着，在多孔硅层的顶部形成保形薄膜硅衬底。 然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。 所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

公开(公告)号：WO2010091367A1

公开(公告)日：2010-08-12

申请号：PCT/US2010/023514

申请日：2010-02-08

Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

Inventor： WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

IPC: H01L21/762 ,  H01L21/20

CPC classification number: H01L31/035281 ,  H01L21/76229 ,  H01L21/76232 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

Abstract translation: 提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。 在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。 提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。 然后从可重复使用的半导体模板中释放薄膜半导体衬底。

公开(公告)号：WO2010083422A1

公开(公告)日：2010-07-22

申请号：PCT/US2010/021209

申请日：2010-01-15

Applicant: SOLEXEL, INC. ,  CRAFTS, Doug ,  MOSLEHI, Mehrdad ,  TAMILMANI, Subramanian ,  KRAMER, Joe ,  KAMIAN, George ,  NAG, Somnath

Inventor： CRAFTS, Doug ,  MOSLEHI, Mehrdad ,  TAMILMANI, Subramanian ,  KRAMER, Joe ,  KAMIAN, George ,  NAG, Somnath

IPC: B01J19/00 ,  H01L21/02 ,  H01L33/00

CPC classification number: C25F3/12 ,  C25D11/32 ,  C25F7/00 ,  H01L21/67005 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/6776 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

Abstract translation: 本发明的一个目的是提供用于大量生产光伏（PV）太阳能电池器件结构的高生产率，低成本的制造设备。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。

公开(公告)号：WO2009026240A1

公开(公告)日：2009-02-26

申请号：PCT/US2008073499

申请日：2008-08-18

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

Abstract translation: 本文公开的方法提供了选择性涂覆3-D衬底的顶表面或脊，同时避免液体涂层材料芯吸到3-D衬底上的微空腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 该模板包括一个模板衬底，在柱子之间有柱子和沟槽。 该步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，这些步骤包括从模板释放半导体层并且使用液体转移涂覆步骤涂覆3D基板，以将液体涂覆材料涂覆到3D基板的表面。 该方法可以进一步包括通过选择性地涂覆衬底的顶脊或表面来涂覆3D衬底。 另外的特征可以包括用填充材料填充基板的微腔，除去填充材料以仅暴露待涂覆的基板表面，用液体涂层材料涂覆基板，并且从微腔除去所述填充材料 的底物。

公开(公告)号：WO2008045813A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/080657

申请日：2007-10-07

Applicant: SOLTAIX, INC. ,  MOSLEHI, Mehrdad

Inventor： MOSLEHI, Mehrdad

IPC: H01L31/042

CPC classification number: H01L31/0504 ,  H01L31/042 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/05 ,  H01L31/056 ,  H01L31/18 ,  Y02B10/12 ,  Y02E10/50

Abstract: Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three- dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual- aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three- dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications. The solar module structures 210 using three- dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of single- aperture unit cells may be used in building facade and rooftop installation applications as well as for centralized solar electricity generation.

Abstract translation: 太阳能模块结构210和270以及用于组装太阳能模块结构的方法。 太阳能模块结构210和270包括布置在太阳能模块结构210和270中的三维薄膜太阳能电池110.三维薄膜太阳能电池包括三维薄膜太阳能电池基板（124和122 ，分别具有发射极结区域1352和掺杂基极区域1360.三维薄膜太阳能电池还包括发射极金属化区域和基底金属化区域。 3-D TFSC衬底包括多个单孔或双孔单元电池。 使用包括具有多个双孔单元电池的三维薄膜太阳能电池基板的三维薄膜太阳能电池的太阳能模块结构270可以用于太阳能玻璃应用中。 使用包括具有多个单孔单元电池的三维薄膜太阳能电池基板的三维薄膜太阳能电池的太阳能模块结构210可以用于建筑立面和屋顶安装应用以及集中式太阳能发电 代。

公开(公告)号：WO2015073591A9

公开(公告)日：2016-04-07

申请号：PCT/US2014065312

申请日：2014-11-12

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD ,  STALCUP THOM ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN ,  CALCATERRA ANTHONY ,  RANA VIRENDRA V ,  SEUTTER SEAN M ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD ,  STALCUP THOM ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN ,  CALCATERRA ANTHONY ,  RANA VIRENDRA V ,  SEUTTER SEAN M ,  WINGERT MICHAEL

IPC: H01L31/00

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (Ml), the Ml metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the Ml layer, the backplane sheet comprising a plurality of via holes that expose portions of the Ml layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the Ml layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的Ml金属层，背面与被设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池背面的电绝缘背板片，所述背板片包括多个通孔，所述多个通孔暴露在所述背板片下面的M1层的部分; 以及与背板接触的M2层，M2层由预先制备的金属箔材料制成，包括5〜50μm的厚度，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：WO2015100392A2

公开(公告)日：2015-07-02

申请号：PCT/US2014/072299

申请日：2014-12-23

Applicant: SOLEXEL, INC. ,  DESHPANDE, Anand ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  SEUTTER, Sean, M.

Inventor： DESHPANDE, Anand ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  SEUTTER, Sean, M.

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0475 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: According to one aspect of the disclosed subject matter, a method for forming self aligned contacts for monolithically isled back contact back junction solar cells is provided.

Abstract translation: 根据所公开的主题的一个方面，提供了一种用于形成用于单片反接触背面太阳能电池的自对准触点的方法。

公开(公告)号：WO2015100389A2

公开(公告)日：2015-07-02

申请号：PCT/US2014/072294

申请日：2014-12-23

Applicant: SOLEXEL, INC. ,  KAPUR, Pawan ,  DESHAZER, Heather ,  ISLAM, Mohammed ,  MOSLEHI, Mehrdad, M.

Inventor： KAPUR, Pawan ,  DESHAZER, Heather ,  ISLAM, Mohammed ,  MOSLEHI, Mehrdad, M.

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  Y02E10/547

Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. An amorphous silicon passivating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and the amorphous silicon passivating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 非晶硅钝化层位于基极区上。 第一级基极和发射极金属化接触基极区上的发射极区域和非晶硅钝化层。 电绝缘背板位于第一级基底和发射极金属化上。 第二级金属化通过电绝缘背板中的导电通孔接触第一级基极和发射极金属化。

公开(公告)号：WO2014179368A1

公开(公告)日：2014-11-06

申请号：PCT/US2014/035965

申请日：2014-04-29

Applicant: SOLEXEL, INC. ,  RANA, Virendra, V. ,  KAPUR, Pawan ,  SEUTTER, Sean, M. ,  MOSLEHI, Mehrdad, M.

Inventor： RANA, Virendra, V. ,  KAPUR, Pawan ,  SEUTTER, Sean, M. ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/04 ,  H01L21/265 ,  H01L21/205

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0084 ,  B23K26/0624 ,  B23K26/18 ,  B23K2201/40 ,  B23K2203/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: The laser patterning methods utilizing a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions which may further improve cell efficiency by completely avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

Abstract translation: 利用激光吸收硬掩模与湿蚀刻结合形成图案化的太阳能电池掺杂区域的激光图案化方法，其可以通过完全避免与覆盖的透明钝化层的消融相关联的下面的半导体衬底的激光烧蚀来进一步提高电池效率。