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公开(公告)号：WO2020045979A1
公开(公告)日：2020-03-05
申请号：PCT/KR2019/010997
申请日：2019-08-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KO, Sang Min , KIM, Jin Won
IPC: A01G7/04 , H05B37/02 , F21W131/109
Abstract: A plant cultivation device includes a light source unit having a first light source emitting stimulation light in a UV region toward a plant and a second light source emitting background light toward the plant, the background light having a different peak wavelength than the stimulation light. The second light source emits the background light during a light period and stops emission of the background light during a dark period. In addition, the first light source emits the stimulation light for a certain period of time during the light period. Further, a cumulative amount of the stimulation light emitted from the first light source is 0.036 J or more per day.
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42.发明申请
公开(公告)号：WO2017209457A1
公开(公告)日：2017-12-07
申请号：PCT/KR2017/005521
申请日：2017-05-26
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , DOBRINSKY, Alexander , SHATALOV, Maxim S.
CPC classification number: H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385
Abstract: A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. Each stress control layer includes stress control regions separated from adjacent stress control regions by a predetermined spacing. The stress control layer induces one of a tensile stress and a compressive stress in an adjacent semiconductor layer.
Abstract translation: 公开了一种用于光电子器件的半导体异质结构。 半导体异质结构包括在光电子器件中使用的多个半导体层内的至少一个应力控制层。 每个应力控制层包括与相邻应力控制区域隔开预定间隔的应力控制区域。 应力控制层在相邻的半导体层中引起拉应力和压应力之一。
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公开(公告)号：WO2017171460A1
公开(公告)日：2017-10-05
申请号：PCT/KR2017/003537
申请日：2017-03-31
Applicant: SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： DOBRINSKY, Alexander , SHUR, Michael
Abstract: An approach for treating a fluid transport conduit with ultraviolet radiation is disclosed. A light guiding unit, operatively coupled to a set of ultraviolet radiation sources, encloses the fluid transport conduit. The light guiding unit directs ultraviolet radiation emitted from the ultraviolet radiation sources to ultraviolet transparent sections on an outer surface of the fluid transport conduit. The emitted ultraviolet radiation passes through the ultraviolet transparent sections, penetrates the fluid transport conduit and irradiates the internal walls. A control unit adjusts a set of operating parameters of the ultraviolet radiation sources as a function of the removal of contaminants from the internal walls of the fluid transport conduit.
Abstract translation: 公开了一种用紫外辐射处理流体输送管道的方法。 可操作地耦合到一组紫外线辐射源的光导单元封闭流体输送导管。 导光单元将从紫外线辐射源发射的紫外线辐射到流体输送导管的外表面上的紫外线透明部分。 发射的紫外线辐射通过紫外线透射部分，穿透流体输送导管并照射内壁。 控制单元根据从流体输送导管的内壁去除污染物的功能来调整紫外线辐射源的一组操作参数。
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公开(公告)号：WO2016159638A1
公开(公告)日：2016-10-06
申请号：PCT/KR2016/003216
申请日：2016-03-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： PARK, Ki Yon , HEO, Jeong Hun , HAN, Yu Dae , HAN, Gun Woo
IPC: H01L33/12
CPC classification number: H01L33/12 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38
Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.
Abstract translation: 本文公开了一种UV发光二极管。 UV发光二极管包括第一导电型半导体层; 第一应力调整层，设置在所述第一导电类型半导体层上，并且包括第一氮化物层和所述第二氮化物层，所述第一氮化物层包括Al，所述第二氮化物层设置在所述第一氮化物层上，并且具有比所述第一氮化物层低的Al组成比; 设置在所述第一应力调整层上的有源层; 以及设置在所述有源层上的第二导电类型半导体层，其中所述第一应力调整层包括插入在所述第一氮化物层中的Alδ层，以及其中插入所述Alδ层的所述第一氮化物层的下表面具有更大的 平均拉伸应力比直接设置在第一氮化物层上的第二氮化物层的下表面。
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公开(公告)号：WO2016159614A1
公开(公告)日：2016-10-06
申请号：PCT/KR2016/003149
申请日：2016-03-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： HAN, Chang Seok , KWAK, Woo Chul , CHOI, Hyo Shik , HWANG, Jung Hwan , JANG, Chang Geun
IPC: H01L33/12
CPC classification number: H01L33/12 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32
Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semiconductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.
Abstract translation: 本文公开了一种UV发光装置。 UV发光装置包括第一导电类型半导体层，设置在第一导电类型半导体层上的抗裂纹层，设置在抗裂纹层上的有源层和设置在有源层上的第二导电类型半导体层 其中，所述防裂层包括设置在所述第一导电类型半导体层和所述抗裂纹层之间的界面处的第一格子点和第二格子点，所述第一格子点连接到所述第一导电类型半导体层的格子，以及 第二格子点不连接到第一导电类型半导体层的晶格。
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Patent Agency Ranking
公开(公告)号：WO2016108459A1
公开(公告)日：2016-07-07
申请号：PCT/KR2015/013375
申请日：2015-12-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Jae Jo
CPC classification number: C02F1/325 , C02F2201/3222 , C02F2201/3227 , C02F2201/328 , C02F2301/024 , C02F2301/026 , C02F2303/04
Abstract: A tubular fluid purification apparatus includes a guide part provided with an inlet port into which fluid is drawn, a discharge part provided with an outlet port from which the fluid is discharged, a conduit part configured to provide a space for flow of the fluid between the guide part and the discharge part, and a purification of unit supported on an inner surface of the conduit part and disposed to face the fluid flowing from the guide part to the discharge part. The purification unit includes a vortex generation part including a support and an opening formed in the support, and a light emitting diode disposed on the support at a position adjacent to the opening and configured to provide ultraviolet light.
Abstract translation: 管状流体净化装置包括具有引入流体的入口的引导部，排出部，该排出部设置有排出流体的出口，导管部，其配置为在流体之间流动的空间 引导部分和排出部分，以及净化单元，其被支撑在导管部分的内表面上并且被设置为面对从引导部分流到排出部分的流体。 净化单元包括涡流产生部分，其包括支撑件和形成在支撑件中的开口，以及发光二极管，其设置在与开口相邻的位置处的支撑件上并且被配置为提供紫外线。
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公开(公告)号：WO2016076639A1
公开(公告)日：2016-05-19
申请号：PCT/KR2015012161
申请日：2015-11-12
Applicant: SEOUL VIOSYS CO LTD
Inventor： JUNG JUNG WHAN , KIM KYUNG HAE , KWAK WOO CHUL , JANG SAM SEOK
Abstract: A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive semiconductor layer positioned on the lower nitride layer; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; and an active layer interposed between the first and the second conductive semiconductor layers.
Abstract translation: 公开了一种发光器件及其制造方法。 该发光器件包括：图案化的蓝宝石衬底（PSS），其在其上表面上包括多个凹部和突出部分; 缓冲层，所述缓冲层包括位于所述凹部上的凹部缓冲层和位于所述突部的侧表面上并以多个岛状分散排列的凸部缓冲层; 位于所述缓冲层和所述PSS上并覆盖所述突出部分的下氮化物层; 定位在突出部分的侧表面和下氮化物层之间的界面上的空隙; 位于所述下氮化物层上的第一导电半导体层; 位于所述第一导电半导体层上的第二导电半导体层; 以及介于第一和第二导电半导体层之间的有源层。
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公开(公告)号：WO2016036067A1
公开(公告)日：2016-03-10
申请号：PCT/KR2015/009068
申请日：2015-08-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： YOON, Yeo Jin
IPC: H01L33/42
CPC classification number: H01L33/38 , H01L33/08 , H01L33/20 , H01L33/42 , H01L2933/0016
Abstract: A light emitting diode is disclosed. The light emitting diode includes: a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer; a current blocking unit disposed on one region of the second conductive-type semiconductor layer and including a through-hole formed in a thickness direction thereof; a transparent electrode covering at least a portion of an upper surface of the second conductive-type semiconductor layer and the current blocking unit, and including an opening exposing the through-hole; and a second electrode contacting the second conductive-type semiconductor layer through the through-hole and disposed on the current blocking unit, wherein the transparent electrode includes a first transparent electrode and a second transparent electrode disposed on the first transparent electrode and having a smaller area than the first transparent electrode, and the second electrode forms ohmic contact with side surfaces of the first and second transparent electrodes.
Abstract translation: 公开了一种发光二极管。 发光二极管包括：第一导电型半导体层; 第二导电型半导体层; 活性层 电流阻挡单元，设置在所述第二导电型半导体层的一个区域上，并且包括沿其厚度方向形成的通孔; 覆盖所述第二导电型半导体层的上表面的至少一部分的透明电极和所述电流阻挡单元，并且包括露出所述通孔的开口; 以及第二电极，其通过所述通孔与所述通孔接触并设置在所述电流阻挡单元上，其中所述透明电极包括第一透明电极和设置在所述第一透明电极上并具有较小面积的第二透明电极 并且第二电极与第一和第二透明电极的侧表面形成欧姆接触。
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公开(公告)号：WO2015012592A1
公开(公告)日：2015-01-29
申请号：PCT/KR2014/006702
申请日：2014-07-23
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Jong Rack , LEE, Chung Hoon , SUH, Dae Woong , SON, Young Hwan
IPC: A61L2/10
CPC classification number: A61L2/10 , A61L2202/16 , A61L2202/26
Abstract: Sterilization apparatuses are provided. The sterilization apparatus includes a case having a sidewall surface and a top surface, a plurality of ultraviolet light emitting diodes (UV LEDs) disposed on an outer surface of the case to generate UV rays, and a prop on which the case is mounted.
Abstract translation: 提供灭菌装置。 杀菌装置包括具有侧壁表面和顶表面的壳体，设置在壳体的外表面上以产生紫外线的多个紫外发光二极管（UV LED）以及安装壳体的支架。
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公开(公告)号：WO2015012513A1
公开(公告)日：2015-01-29
申请号：PCT/KR2014/006091
申请日：2014-07-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： KIM, Chang Yeon , CHOI, Joo Won
CPC classification number: H01L33/22 , H01L33/0095 , H01L2933/0083
Abstract: Disclosed herein is a method of fabricating a light emitting device. The method includes forming a sacrificial layer on a growth substrate; forming a mask pattern on the sacrificial layer; partially removing the sacrificial layer to form fine voids within the sacrificial layer; forming a plurality of light emitting structures on the sacrificial layer while forming voids within the sacrificial layer, the plurality of light emitting structures covering at least a portion of the mask pattern and being separated from each other; bonding a sub-mount onto the plurality of light emitting structures; and separating the growth substrate from the plurality of light emitting structures via chemical lift-off or stress lift-off, wherein the growth substrate is monolithically separated from the plurality of light emitting structures. Thus, the method of fabricating a light emitting device has improved processability and productivity.
Abstract translation: 本文公开了一种制造发光器件的方法。 该方法包括在生长衬底上形成牺牲层; 在牺牲层上形成掩模图案; 部分地去除牺牲层以在牺牲层内形成细小空隙; 在所述牺牲层上形成多个发光结构，同时在所述牺牲层内形成空隙，所述多个发光结构覆盖所述掩模图案的至少一部分并且彼此分离; 将子座接合到所述多个发光结构上; 以及通过化学剥离或应力剥离将所述生长衬底与所述多个发光结构分离，其中所述生长衬底与所述多个发光结构单片分离。 因此，制造发光器件的方法具有改善的加工性和生产率。
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