中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

266 records (took 0.051 seconds)

    METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES
    41.
    发明申请
    METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES 审中-公开
    执行光电器件测试的方法和系统

    公开(公告)号：WO2014025824A2

    公开(公告)日：2014-02-13

    申请号：PCT/US2013053856

    申请日：2013-08-06

    Applicant: SKORPIOS TECHNOLOGIES INC

    Inventor： STONE ROBERT J ,  KRASULICK STEPHEN B

    IPC: H04B17/00

    CPC classification number: G01J1/08 ,  G01J1/42 ,  G01J2001/083 ,  G01J2001/4247 ,  G01R31/3187 ,  H04B10/035 ,  H04B10/0731 ,  H04B10/0779 ,  H04B17/0082

    Abstract: A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.

    Abstract translation: 光子系统包括发射光子模块和接收光子模块。 光子系统还包括耦合到发射光子模块的发射波导，与发射波导集成的第一光开关，以及光耦合到第一光开关的诊断波导。 光子系统还包括耦合到接收光子模块的接收波导和与接收波导集成并与光学耦合到诊断波导的第二光开关。

    Etched facet in a multi quantum well structure
    45.
    发明授权
    Etched facet in a multi quantum well structure 有权

    公开(公告)号：US12253714B2

    公开(公告)日：2025-03-18

    申请号：US18179167

    申请日：2023-03-06

    Applicant: Skorpios Technologies, Inc.

    Inventor： Paveen Apiratikul ,  Damien Lambert

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION
    49.
    发明申请
    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION 有权

    公开(公告)号：US20230124445A1

    公开(公告)日：2023-04-20

    申请号：US17949022

    申请日：2022-09-20

    Applicant: Skorpios Technologies., Inc.

    Inventor： Stephen B. Krasulick ,  John Dallesasse

    IPC: H01L25/16 ,  H01L25/075 ,  H01L25/00

    Abstract: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

    Diffusion blocking layer for a compound semiconductor structure
    50.
    发明授权
    Diffusion blocking layer for a compound semiconductor structure 有权

    公开(公告)号：US11557880B2

    公开(公告)日：2023-01-17

    申请号：US17061305

    申请日：2020-10-01

    Applicant: Skorpios Technologies, Inc.

    Inventor： John Y. Spann ,  John Zyskind

    IPC: H01S5/00 ,  H01S5/30 ,  H01S5/343 ,  H01S5/323

    Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

Patent Agency Ranking