PROCEDE DE FABRICATION D'UN DISPOSITIF ELECTROMECANIQUE ET DISPOSITIF CORRESPONDANT

    公开(公告)号:EP3218302A1

    公开(公告)日:2017-09-20

    申请号:EP15791617.2

    申请日:2015-11-09

    Inventor: COLLET, Joël

    Abstract: The invention relates to an electromechanical device characterised in that it comprises a stack made up of an insulating layer (31) inserted between two solid layers (10, 30), and a micromechanical structure (60, 61) with predetermined thickness suspended above a recess (4) with predetermined depth, the recess (4) and the micromechanical structure (60, 61) making up one of the two solid layers (10, 30) of the stack, and the insulating layer (31) making up the bottom of said recess (4).

    Abstract translation: 本发明涉及一种机电装置,其特征在于,其包括由插入在两个固体层(10,30)之间的绝缘层(31)和具有预定厚度的微机械结构(60,61) (4),所述凹部(4)和所述微机械结构(60,61)构成所述堆叠的所述两个固体层(10,30)中的一个,并且所述绝缘层(31)构成所述堆叠的底部 所述凹槽(4)。

    MESURE DE PARAMETRES PHYSIQUES PAR UNE SONDE MEDICALE
    46.
    发明公开
    MESURE DE PARAMETRES PHYSIQUES PAR UNE SONDE MEDICALE 有权
    系统测量物理参数随医疗探针

    公开(公告)号:EP1079732A1

    公开(公告)日:2001-03-07

    申请号:EP99920877.0

    申请日:1999-05-17

    CPC classification number: A61B5/0215 A61B5/0002

    Abstract: The invention concerns a system for measuring at least one physical parameter in a site of a patient's body accessible by a medical probe, comprising a medical probe (1) consisting of a rod (2) equipped with means sensing said parameter and means for delivering an electric signal representing said parameter, and collected by the sensor, to a data processing device external to the patient. The sensor is contained in an electronic measuring module (41, 42) which also includes other elements constituted by electronic means associated with the sensor for supplying a measurement signal, means for remote transmission of the measurement signal, means for powering said elements.

    MULTIAXIAL MICRO-ELECTRONIC INERTIAL SENSOR

    公开(公告)号:EP2795253B1

    公开(公告)日:2018-10-03

    申请号:EP12821255.2

    申请日:2012-12-20

    Inventor: LECLERC, Jacques

    Abstract: A resonator micro-electronic inertial sensor, preferably a micro-electromechanical system (MEMS) sensor (e.g. a gyro), for detecting linear accelerations and rotation rates in more than one axis comprises: €¢ a proof-mass system (21.1, ..., 21.4) flexibly suspended above a substrate for performing a rotational in-plane vibration about a central axis (24,) €¢ a drive electrode system (D1, ..., D4) for driving the proof-mass system (21.1, ..., 21.4) to perform said rotational in-plane vibration, €¢ and a sensing electrode system (S1, ..., S8) connected to the proof-mass system (21.1, ..., 21.4) for detecting linear accelerations or rotation rates in more than one axis. Said proof-mass system (21.1, ..., 21.4) has more than two proof-mass elements flexibly coupled (25.1a, 25.1 b) to each other. Each proof-mass element (21.1, 21.2) is directly and flexibly connected (23.1, 25.1a, 25.1 b) to an anchor structure (22) on the substrate (32). The proof-mass elements (21.1, ..., 21.4) are preferably arranged in a ring-shaped configuration between an inner and an outer radius (R1, R2) with respect to the central axis (24).

    OSCILLATEUR MÉCANIQUE ET PROCÉDÉ DE RÉALISATION ASSOCIE
    50.
    发明公开
    OSCILLATEUR MÉCANIQUE ET PROCÉDÉ DE RÉALISATION ASSOCIE 审中-公开
    机械振荡器及其制造方法

    公开(公告)号:EP3256910A1

    公开(公告)日:2017-12-20

    申请号:EP16709989.4

    申请日:2016-02-12

    CPC classification number: G04B17/066 B81B3/0081 F16F1/021 G04B17/04 G04B17/22

    Abstract: The invention relates to a mechanical oscillator equipped with a bar (11), said bar (11) including a first silicon layer (Cs1) having a crystal lattice extending in a first direction (Ds1) of a plane, a thermally compensating layer (Co1) formed from a material having a Young's modulus of thermal coefficient of opposite sign to that of silicon, and a second silicon layer (Cs2) having a crystal lattice extending in a second direction (Ds2) of the plane, the first and second directions (Ds1, Ds2) being shifted by an angle of 45° in the plane of the layers, and the thermally compensating layer (Co1) extending between the first and second silicon layers (Cs1, Cs2).

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