ELECTRONIC DEVICE
    41.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号:US20240347544A1

    公开(公告)日:2024-10-17

    申请号:US18631546

    申请日:2024-04-10

    Inventor: Hsien-Te CHEN

    CPC classification number: H01L27/124 H01L23/50 H01L23/5384 H01L25/167

    Abstract: An electronic device includes a substrate, a plurality of functional units, a wiring unit and a plurality of conductive members. The substrate has a first surface and a second surface opposite to the first surface. The functional units are defined on the first surface of the substrate, and each functional unit includes one or more semiconductor components. The wiring unit is arranged on the second surface of the substrate. The wiring unit includes a plurality of circuits, and the circuits are provided corresponding to the functional units. The conductive members are arranged corresponding to the circuits, and each conductive member electrically connects the semiconductor component(s) of one corresponding functional unit to the corresponding circuit of the wiring unit. The semiconductor component(s) of the corresponding functional unit and the corresponding circuit of the wiring unit are at least partially overlapped.

    ELECTRONIC DETECTION INTERFACE AND ELECTRONIC DETECTION MODULE USING THE SAME

    公开(公告)号:US20230253432A1

    公开(公告)日:2023-08-10

    申请号:US18300133

    申请日:2023-04-13

    Inventor: Hsien-Te CHEN

    CPC classification number: H01L27/14636 H01L27/14603

    Abstract: An electronic detection interface for testing micro photoelectric chips or micro semiconductor chips comprises a substrate structure and a plurality of detection units in array, responsive to the micro photoelectric chips or the micro semiconductor chips. The substrate structure includes a circuit film, which comprises a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conductive pillar, which is electrically connected to each of the circuit units through a conductive pad. Each of the resilient conductive pillars is a conductive photoresist.

    ELECTRICAL DEVICE
    43.
    发明申请

    公开(公告)号:US20210225905A1

    公开(公告)日:2021-07-22

    申请号:US17143542

    申请日:2021-01-07

    Inventor: Hsien-Te CHEN

    Abstract: An electronic device includes a first module and a second module stacked upon the first module in a stacking direction. The first module includes a pixel substrate and a counter substrate disposed opposite to each other. The pixel substrate is defined with a plurality of pixels. The second module is disposed at one side of the first module adjacent to the counter substrate and away from the pixel substrate. The second module includes a plurality of micro-photoelectric units and a protection layer. The protection layer stacks upon the micro-photoelectric units and is disposed at one side of the second module away from the first module. Each of the micro-photoelectric units unshields one or more of the pixels in the stacking direction. Each micro-photoelectric unit includes a micro-photoelectric element, and at least one of the micro-photoelectric elements is a sensor element.

    ELECTRONIC DEVICE
    44.
    发明申请

    公开(公告)号:US20210202814A1

    公开(公告)日:2021-07-01

    申请号:US17132719

    申请日:2020-12-23

    Inventor: Hsien-Te CHEN

    Abstract: An electronic device comprises a target substrate, a micro semiconductor structure array, a conductor array, and a connection layer. The micro semiconductor structure array is disposed on the target substrate. The conductor array corresponds to the micro semiconductor structure array, and electrically connects the micro semiconductor structure array to a pattern circuit of the target substrate. The conductors of the conductor array are independent from one another. Each conductor is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of the corresponding one of the micro semiconductor structures of the micro semiconductor structure array. The connection layer connects the micro semiconductor structures to the target substrate. The connection layer excludes a conductive material. The connection layer contacts and surrounds the conductors, so that the connection layer and the conductors together form a one-layer structure.

    MICRO SEMICONDUCTOR STACKED STRUCTURE AND ELECTRONIC APPARATUS HAVING THE SAME

    公开(公告)号:US20200350298A1

    公开(公告)日:2020-11-05

    申请号:US16864753

    申请日:2020-05-01

    Inventor: HSIEN-TE CHEN

    Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

    Display device
    46.
    发明授权
    Display device 审中-公开

    公开(公告)号:US10672347B2

    公开(公告)日:2020-06-02

    申请号:US16162752

    申请日:2018-10-17

    Inventor: Hsien-Te Chen

    Abstract: A display device has a plurality of sub-pixels, and includes a circuit substrate, a plurality of micro light-emitting semiconductor elements, a light conversion layer and an opposite substrate. The micro light-emitting semiconductor elements are disposed separately on the circuit substrate and configured corresponding to the sub-pixels. The light conversion layer has a plurality of light conversion portions disposed respectively corresponding to at least partial of the micro light-emitting semiconductor elements. The light emitted from the micro light-emitting semiconductor element corresponding to the sub-pixel passes through the light conversion portion to generate white light. The opposite substrate is disposed at one side of the light conversion layer away from the circuit substrate. In another display device, the light emitted from the micro light-emitting semiconductor element passes through the light conversion layer to generate white light.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE
    47.
    发明申请

    公开(公告)号:US20190157254A1

    公开(公告)日:2019-05-23

    申请号:US16236168

    申请日:2018-12-28

    Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrodeand a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.

    DISPLAY DEVICE
    48.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20190114974A1

    公开(公告)日:2019-04-18

    申请号:US16162752

    申请日:2018-10-17

    Inventor: Hsien-Te CHEN

    Abstract: A display device has a plurality of sub-pixels, and includes a circuit substrate, a plurality of micro light-emitting semiconductor elements, a light conversion layer and an opposite substrate. The micro light-emitting semiconductor elements are disposed separately on the circuit substrate and configured corresponding to the sub-pixels. The light conversion layer has a plurality of light conversion portions disposed respectively corresponding to at least partial of the micro light-emitting semiconductor elements. The light emitted from the micro light-emitting semiconductor element corresponding to the sub-pixel passes through the light conversion portion to generate white light. The opposite substrate is disposed at one side of the light conversion layer away from the circuit substrate. In another display device, the light emitted from the micro light-emitting semiconductor element passes through the light conversion layer to generate white light.

    TARGET SUBSTRATE WITH MICRO SEMICONDUCTOR STRUCTURES

    公开(公告)号:US20190074206A1

    公开(公告)日:2019-03-07

    申请号:US16121945

    申请日:2018-09-05

    Inventor: Hsien-Te CHEN

    Abstract: A target substrate with micro semiconductor structures is manufactured by following steps of: attaching a pre-adhesive layer on a target substrate; patterning the adhesive layer to form a plurality of micro contact protrusions; and using the target substrate to perform a selective batch pickup procedure to pick up a plurality of micro semiconductor structures so as to form the target substrate with micro semiconductor structures.

    Manufacturing method of optoelectronic semiconductor device by welding and lift-off

    公开(公告)号:US10211195B2

    公开(公告)日:2019-02-19

    申请号:US15696541

    申请日:2017-09-06

    Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to peel off the microsized optoelectronic semiconductor elements from the epitaxial substrate.

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