公开(公告)号：KR1020100052918A

公开(公告)日：2010-05-20

申请号：KR1020080111814

申请日：2008-11-11

Applicant: 삼성전기주식회사

Inventor： 김운천 ,  이성 ,  임순규 ,  한종우 ,  이정원 ,  정율교

IPC: H01G4/10 ,  H01G4/018 ,  C01B31/02

CPC classification number: H01G4/10 ,  C01B32/158 ,  C09C1/48 ,  H01G4/018

Abstract: PURPOSE: A capacitor is provided to remarkably reduce the dielectric loss value by forming a multi-layered dielectric substance including a second dielectric layer formed into a first dielectric layer and the BiZnNb system oxide. CONSTITUTION: A dielectric substance(120) is formed in a first electrode(110). A second electrode(130) is formed in the dielectric substance. The dielectric substance comprises a first dielectric layer(122) and a second dielectric layer(124). The second dielectric layer is formed in the first dielectric layer. The second dielectric layer has the dielectric loss smaller than the first dielectric layer. The dielectric constant of the second dielectric layer is smaller than the dielectric constant of the first dielectric layer and is greater than 4. The second dielectric layer comprises at least one selected among a group consisting of the BiZnNb system oxide, the BiTi system oxide, the BiNb system oxide, the BiCuNb system oxide, and the BiMgNb system oxide.

Abstract translation: 目的：通过形成包括形成在第一介电层中的第二电介质层和BiZnNb体系氧化物的多层电介质，提供电容器以显着降低介电损耗值。 构成：电介质物质（120）形成在第一电极（110）中。 在电介质中形成第二电极（130）。 介电物质包括第一介电层（122）和第二介电层（124）。 第二电介质层形成在第一电介质层中。 第二电介质层的介电损耗小于第一电介质层。 第二电介质层的介电常数小于第一介电层的介电常数且大于4.第二电介质层包括选自BiZnNb系氧化物，BiTi系氧化物， BiNb体系氧化物，BiCuNb体系氧化物和BiMgNb体系氧化物。