公开(公告)号：KR100475117B1

公开(公告)日：2005-03-11

申请号：KR1020020072092

申请日：2002-11-19

Applicant: 삼성전자주식회사

Inventor： 서정훈 ,  최길현 ,  김병희 ,  윤주영 ,  박성건

IPC: H01L21/3205

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 큰 아스펙트비 및 작은 CD를 가지는 콘택홀과 같은 리세스 영역을 매립하는 공정을 포함하는 금속 배선 형성 공정에서 스텝커버리지 조절막을 이용하여 금속 배선층의 스텝커버리지를 증가시킴으로써 콘택홀 내부에서 금속 배선층의 양호한 증착 상태 및 매립 상태를 얻을 수 있는 반도체 소자의 금속 배선 형성 방법에 대하여 개시한다. 본 발명에서는 반도체 기판상에 리세스 영역을 구비하는 절연막 패턴을 형성한다. 상기 리세스 영역의 내벽 및 상기 절연막 패턴의 상부에 장벽 금속막을 형성한다. 상기 절연막 패턴의 상부에서보다 상기 리세스 영역 내벽 위에서 더 작은 두께를 가지는 스텝커버리지 조절막을 상기 장벽 금속막 위에 형성한다. CVD (chemical vapor deposition) 공정에 의하여 상기 스텝커버리지 조절막 위에 Al막을 형성한다.

公开(公告)号：KR1020040102274A

公开(公告)日：2004-12-04

申请号：KR1020030033648

申请日：2003-05-27

Applicant: 삼성전자주식회사

Inventor： 양승길 ,  최길현 ,  강상범 ,  박성건 ,  이유경

IPC: H01L21/20

Abstract: PURPOSE: A semiconductor device and a forming method thereof are provided to prevent the degradation of a dielectric film in a capacitor by forming a titanium nitride layer on the dielectric film at a predetermined temperature of 400 °C or less without a plasma treatment and to restrain the penetration of moisture and oxygen by forming an adhesive titanium nitride layer on the titanium nitride layer. CONSTITUTION: A titanium nitride layer(10) and an adhesive titanium nitride layer(20) are alternately stacked with each other. A conductive layer(30) is formed on the uppermost adhesive titanium nitride layer. The titanium nitride layer is formed by using one selected from a group consisting of TDEAT, TDMAT and TEMAT at a temperature of 300 to 350 °C under a pressure condition of 2 to 4 Torr.

Abstract translation: 目的：提供一种半导体器件及其形成方法，用于通过在400℃或更低的预定温度下在电介质膜上形成氮化钛层而不经等离子体处理来抑制电容器中的电介质膜的劣化，并且抑制 通过在氮化钛层上形成粘合剂氮化钛层来渗透水分和氧气。 构成：氮化钛层（10）和粘合剂氮化钛层（20）彼此交替堆叠。 导电层（30）形成在最上面的粘结氮化钛层上。 在300〜350℃的温度下，在2〜4Torr的压力条件下，使用选自TDEAT，TDMAT和TEMAT的一种来形成氮化钛层。

公开(公告)号：KR1020040048618A

公开(公告)日：2004-06-10

申请号：KR1020020076536

申请日：2002-12-04

Applicant: 삼성전자주식회사

Inventor： 최길현 ,  최경인 ,  김병희 ,  박성건

IPC: H01L21/205

Abstract: PURPOSE: An ALD(Atomic Layer Deposition) apparatus is provided to be capable of improving the characteristics of a thin film. CONSTITUTION: An ALD apparatus is provided with a chamber(110), a lower block(112) installed in the chamber for loading a wafer, and an upper block(114) for supplying reaction space by cooperating with the lower block. The ALD apparatus further includes a gas supply part for supplying reaction gas to the reaction space, a gas exhaust part for exhausting the reaction gas to the outside, and an energy supply part(140) for supplying plasma power to the upper block. Preferably, the ALD apparatus further includes a gas supply line(130) for supplying plasma gas onto the wafer. Preferably, a lifting part(120) is used for moving the upper or lower block up and down.

Abstract translation: 目的：提供ALD（原子层沉积）装置以能够改善薄膜的特性。 构成：ALD装置设置有室（110），安装在用于装载晶片的室中的下块（112）和用于通过与下块配合来供应反应空间的上块（114）。 ALD装置还包括用于向反应空间供给反应气体的气体供给部，将反应气体排出到外部的排气部，以及向上部块供给等离子体动力的能量供给部（140）。 优选地，ALD装置还包括用于将等离子体气体供应到晶片上的气体供应管线（130）。 优选地，提升部件（120）用于上下移动上部或下部块体。

公开(公告)号：KR1020040017655A

公开(公告)日：2004-02-27

申请号：KR1020020050072

申请日：2002-08-23

Applicant: 삼성전자주식회사

Inventor： 박희숙 ,  최길현 ,  강상범 ,  박성건 ,  문광진

IPC: H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858

Abstract: PURPOSE: A method for forming a metal contact of a semiconductor device is provided to be capable of omitting a two-step RTP(Rapid Thermal Processing) and strip process while the thickness of a cobalt layer is reduced. CONSTITUTION: An insulating layer(105) having a contact hole is formed at the upper portion of a silicon substrate(101). An ohmic layer is formed along the upper surface of the resultant structure. At this time, the ohmic layer is made of a cobalt layer(107) and a titanium layer(109). A cobalt silicide layer(111) or/and a titanium silicide layer are formed at the bottom portion of the contact hole while a titanium nitride layer(113) is formed at the upper portion of the ohmic layer as a diffusion barrier. A plug(117) is formed at the upper portion of the diffusion barrier for completely filling the contact hole.

Abstract translation: 目的：提供一种用于形成半导体器件的金属接触的方法，以便能够在钴层的厚度减小的同时省略两步RTP（快速热处理）和剥离工艺。 构成：在硅衬底（101）的上部形成具有接触孔的绝缘层（105）。 沿所得结构的上表面形成欧姆层。 此时，欧姆层由钴层（107）和钛层（109）制成。 在接触孔的底部形成钴硅化物层（111）或/和硅化钛层，同时在欧姆层的上部形成氮化钛层（113）作为扩散阻挡层。 在扩散阻挡层的上部形成有用于完全填充接触孔的插头（117）。

公开(公告)号：KR1020040001018A

公开(公告)日：2004-01-07

申请号：KR1020020036074

申请日：2002-06-26

Applicant: 삼성전자주식회사

Inventor： 윤주영 ,  최길현 ,  김병희 ,  박성건 ,  서정훈

IPC: H01L21/205

Abstract: PURPOSE: A source for forming CVD(Chemical Vapor Deposition) aluminium layer is provided to increase deposition rate of the aluminium layer by increasing vapor pressure of MPA(Methyl-Pyrroridine-Alane) source. CONSTITUTION: A CVD aluminium formation source comprises an MPA and an additive of chemical material including unshared electron pair such as nitrogen or phosphorous. The additive is tribenzyl-phosphine, tricyclohexyl-phosphine, diphenyl-isopropyl-phosphine, methyl-diphenyl-phosphine, ethyl-diphenyl-phosphine, propyl-diphenyl-phosphine,diphenyl-cyclohexyl-phoshpine, phenyl-dicyclohexyl-phosphine, tris-diethyl-amido-phosphine, tribenzyl phosphine, tri-(t-butyl)-phosphine, or tri-(i-butyl)-phosphine.

Abstract translation: 目的：提供用于形成CVD（化学气相沉积）铝层的源，以通过增加MPA（甲基 - 吡咯烷 - 丙烷）源的蒸气压来提高铝层的沉积速率。 构成：CVD铝形成源包括MPA和包括非共享电子对（如氮或磷）的化学材料的添加剂。 添加剂是三苄基膦，三环己基膦，二苯基 - 异丙基膦，甲基 - 二苯基膦，乙基 - 二苯基膦，丙基 - 二苯基膦，二苯基 - 环己基 - 膦酸，苯基 - 二环己基膦，三 酰胺，三苄基膦，三（叔丁基）膦，或三（异丁基）膦。

公开(公告)号：KR1020030027392A

公开(公告)日：2003-04-07

申请号：KR1020010060578

申请日：2001-09-28

Applicant: 삼성전자주식회사

Inventor： 이창원 ,  최길현 ,  강상범 ,  박성건 ,  최경인

IPC: H01L21/3205

Abstract: PURPOSE: A method for fabricating a titanium silicide thin film is provided to easily form a titanium silicide layer having low resistivity at a relatively low temperature by cyclically supplying reaction gas and purge gas as inert gas, and to shorten a time interval for depositing a layer by forming the layer composed of a single atom layer or several atom layers. CONSTITUTION: TiCl4 gas as a reaction material with a substrate is introduced. A part of the reaction material is chemically absorbed to the substrate. The reaction material not absorbed to the substrate is eliminated. SiH4 gas or Si2H6 gas is introduced to the substrate to form a solid material containing TiSi2 on the substrate by exchanging a ligand with the absorbed reaction material. A reaction byproduct generated by the exchange of the ligand is eliminated. The abovementioned processes are repeated at least once to transform the solid material into a TiSi2 thin film.

Abstract translation: 目的：提供一种制造硅化钛薄膜的方法，通过循环供给反应气体和吹扫气体作为惰性气体，在相对低的温度下容易地形成具有低电阻率的硅化钛层，并缩短沉积层的时间间隔 通过形成由单个原子层或几个原子层组成的层。 构成：引入作为与基板的反应材料的TiCl 4气体。 一部分反应材料被化学吸附到基底上。 消除了不吸收到衬底的反应材料。 将SiH 4气体或Si 2 H 6气体引入衬底，以通过与吸收的反应材料交换配体而在衬底上形成含有TiSi 2的固体材料。 消除了由配体交换产生的反应副产物。 将上述工艺重复至少一次以将固体材料转变成TiSi 2薄膜。