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41.发明授权마이크로 히터를 이용한 나노 구조 또는 다결정 실리콘형성 방법, 이에 따라 형성된 나노 구조 또는 다결정실리콘 및 이들을 이용하는 전자 장치 有权使用微型加热器，纳米结构或由该方法形成的聚硅氧烷形成纳米结构或聚硅氧烷的方法和使用其的电子器件的方法
公开(公告)号：KR101338350B1
公开(公告)日：2013-12-31
申请号：KR1020070071355
申请日：2007-07-16
Applicant: 삼성전자주식회사
IPC: B82B3/00
CPC classification number: H05B3/148 , H01C17/06513 , H01C17/265 , H01L29/6675 , H01L29/7869 , H05B3/26 , H05B2203/005 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , H05B2214/04
Abstract: 본 발명은 전력 소모가 현저히 저감되고 대면적화가 가능한 마이크로 히터 유닛 또는 어레이를 이용하여, 탄소나노튜브, 질화갈륨 나노 와이어 또는 산화아연 나노 와이어의 나노 구조를 성장시키거나, 비정질 실리콘을 다결정 실리콘으로 변환하는 방법, 이에 따라 형성된 나노 구조 또는 다결정 실리콘 및 이들을 이용하는 전자 장치에 관한 것이다. 본 발명에 따르면, 별도의 고온 공정 장치 없이도 국부적으로 탄소나노튜브, 질화갈륨 나노 와이어, 산화아연 나노 와이어 등의 나노구조 또는 다결정 실리콘을 특히 적은 전력 소모 및 대면적으로 형성할 수 있다.
마이크로히터, 유닛, 어레이, 전력절감, 나노구조, 다결정실리콘-
公开(公告)号：KR1020120067750A
公开(公告)日：2012-06-26
申请号：KR1020100129311
申请日：2010-12-16
Applicant: 삼성전자주식회사
IPC: G02F1/1334
CPC classification number: G02B3/14 , G02F1/13342 , G02F1/134309 , G02F1/292 , G02F2202/36 , G03H1/22 , G02F1/1334 , G02F1/1335
Abstract: PURPOSE: An active optical device using a local electrode is provided to modulate a refractive index with a low driving voltage. CONSTITUTION: A plurality of refractive index variable areas(170) are formed on a substrate. A voltage applying unit forms an electric field on the refractive index variable areas. The refractive index variable areas include internal spaces and liquid crystal materials. The internal spaces are formed on the substrate. The internal spaces are filled with the liquid crystal materials.
Abstract translation: 目的：提供使用局部电极的有源光学器件，以低驱动电压调制折射率。 构成：在基板上形成多个折射率可变区域（170）。 电压施加单元在折射率可变区域上形成电场。 折射率可变区域包括内部空间和液晶材料。 内部空间形成在基板上。 内部空间充满液晶材料。
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公开(公告)号：KR1020120054408A
公开(公告)日：2012-05-30
申请号：KR1020100115764
申请日：2010-11-19
Applicant: 삼성전자주식회사
CPC classification number: G02F1/0147 , G02F1/292 , G02F2201/305 , G02F2202/32 , G02B26/00 , G02B26/06 , G02F1/19
Abstract: PURPOSE: An activeness optical element which uses phase change material is provided to variously modulate the property of incident light with a fast reaction speed by applying material causing phase transformation at prescribed temperatures. CONSTITUTION: An activeness optical element(100) comprises an optical variable layer(150) including material in which a refractive index is changed according to temperature change, and a temperature control means which locally controls the temperature of the optical variable layer. The optical variable layer is composed of a vanadium dioxide thin film. The temperature control means comprises a micro heating array(130) which discharges heat for forming a periodic refractive index alternating pattern on the variable layer. The micro heating array comprises a plurality of heating zones(132) heated by electrical control.
Abstract translation: 目的：提供使用相变材料的活性光学元件，通过施加在规定温度下引起相变的材料，以快速的反应速度来不同地调制入射光的性质。 构成：活性光学元件（100）包括光学可变层（150），其包括折射率根据温度变化而改变的材料，以及局部控制光学可变层的温度的温度控制装置。 光学变化层由二氧化钒薄膜构成。 温度控制装置包括一个微热加热阵列（130），其在可变层上放热以形成周期性折射率交替图案。 微加热阵列包括通过电气控制加热的多个加热区（132）。
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公开(公告)号：KR1020120015890A
公开(公告)日：2012-02-22
申请号：KR1020100078398
申请日：2010-08-13
Applicant: 삼성전자주식회사
Inventor： 최준희
IPC: G02F1/1333
CPC classification number: G06F1/1652 , G06F1/3218 , G09G3/20 , G09G2330/021 , G09G2380/02
Abstract: PURPOSE: A flexible display device and a control method thereof are provided to stop the supply of operation power without additional input signal of a user according to the bending degree of a flexible display device. CONSTITUTION: A sensor unit(20) senses the bending degree of a flexible display unit(10). A power supply unit(30) supplies operation power to the flexible display unit. A control unit(40) controls the power supply unit in order to stop the supply of the operation power about the flexible display unit.
Abstract translation: 目的：提供灵活的显示装置及其控制方法，以根据柔性显示装置的弯曲程度来停止提供操作功率而不需要用户的附加输入信号。 构成：传感器单元（20）感测柔性显示单元（10）的弯曲度。 电源单元（30）向柔性显示单元提供操作电力。 控制单元（40）控制电源单元以便停止围绕柔性显示单元的操作电力的供应。
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公开(公告)号：KR1020110099505A
公开(公告)日：2011-09-08
申请号：KR1020100018571
申请日：2010-03-02
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L33/02
Abstract: 발광 소자 및 그 제조방법이 개시된다. 개시된 발광 소자는 기판; 상기 기판 상에 상기 기판 면으로부터 이격 형성된 것으로, 지지영역과 상기 지지영역보다 좁은 폭을 가지는 가열영역을 구비하는 마이크로 히터부; 상기 지지영역과 상기 기판 사이에 마련되어, 상기 마이크로 히터부를 지지하는 지지부; 상기 가열영역 위에 일차원적으로 수직 성장된 나노코어부 및 상기 나노코어부의 표면에서 방사형으로 순차 성장된 복수의 반도체층으로 이루어진 복수의 나노로드 발광구조체; 상기 복수의 나노로드 발광구조체의 표면의 적어도 일부를 둘러싸는 투명전극층;을 포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020100086735A
公开(公告)日：2010-08-02
申请号：KR1020090006118
申请日：2009-01-23
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L21/324 , H01L29/00
CPC classification number: H01L21/02573 , C23C16/24 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/0262
Abstract: PURPOSE: A method for forming a silicon layer, a method for forming a pn junction, and the pn junction made by the same are provided to improve the quality of the pn junction by forming the silicon layer made of large grains. CONSTITUTION: A micro heater comprising a substrate(10) and a metal pattern(30) separated from the substrate is prepared. A metal pattern is heated by applying the voltage to a metal pattern. A silicon layer(100) is formed on the metal pattern to expose the micro heater to the source gas. The source gas includes silicon. The silicon layer is made of the poly crystal silicon. An amorphous silicon layer is formed on the substrate.
Abstract translation: 目的：提供一种形成硅层的方法，形成pn结的方法和由其制成的pn结，以通过形成由大颗粒制成的硅层来提高pn结的质量。 构成：制备包括基板（10）和与基板分离的金属图案（30）的微加热器。 通过将电压施加到金属图案来加热金属图案。 在金属图案上形成硅层（100），以将微加热器暴露于源气体。 源气体包括硅。 硅层由多晶硅制成。 在基板上形成非晶硅层。
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47.发明公开
公开(公告)号：KR1020090122083A
公开(公告)日：2009-11-26
申请号：KR1020080048308
申请日：2008-05-23
Applicant: 삼성전자주식회사
Inventor： 최준희
IPC: H05B3/26
CPC classification number: F27D99/0006 , H05B2214/04 , Y10T29/49002
Abstract: PURPOSE: A micro-heater, micro-heater array, a method for manufacturing the same and an electronic device using the same are provided to prevent a micro-heater from being damaged even if heating and cooling is repeated. CONSTITUTION: A micro heater(50) includes a metal Line, a supporting part, and a deformation part. The metal line(20) is separated from the substrate. The supporting part(40) is positioned between a substrate and the metal Line, and the supporting part fixes the metal line on a substrate under the metal Line. The deformation part(25) is formed at least one portion of the metal line.
Abstract translation: 目的：提供微加热器，微加热器阵列，其制造方法和使用其的电子装置，以防止微加热器即使重复加热和冷却也被损坏。 构成：微加热器（50）包括金属线，支撑部和变形部。 金属线（20）与衬底分离。 支撑部件（40）位于基板和金属线之间，支撑部件将金属线固定在金属线下方的基板上。 变形部（25）形成金属线的至少一部分。
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公开(公告)号：KR1020080044133A
公开(公告)日：2008-05-20
申请号：KR1020060113044
申请日：2006-11-15
Applicant: 삼성전자주식회사
CPC classification number: H01J31/127 , H01J9/025 , H01J29/04 , H01J1/304 , B82Y40/00
Abstract: A method of manufacturing a field emission device is provided to improve the uniformity of electron emission by accurately aligning an emitter with a center portion of a gate hole. A cathode electrode(112) and a light blocking layer(120) are formed on a substrate(110), and then the light blocking layer is patterned to form a blocking layer hole(121) for exposing the cathode electrode. An insulating layer(130) and a gate material layer are formed on the light blocking layer, and then the gate material layer is patterned to form a gate electrode(140). A photoresist(170) is applied on the gate electrode to cover a gate electrode hole formed on the gate electrode, and then is exposed and developed to form a resist hole(171). The insulating layer is etched through the resist hole to form an insulating hole(131). The gate electrode is etched to form a gate hole(141), and then the photoresist is removed. An emitter is formed on the exposed cathode electrode.
Abstract translation: 提供一种制造场致发射器件的方法，以通过将发射极与栅极孔的中心部分精确对准来改善电子发射的均匀性。 在基板（110）上形成阴极电极（112）和遮光层（120），然后对遮光层进行图案化以形成用于使阴极露出的阻挡层孔（121）。 在遮光层上形成绝缘层（130）和栅极材料层，然后对栅极材料层进行构图以形成栅电极（140）。 在栅电极上施加光致抗蚀剂（170）以覆盖形成在栅电极上的栅极电极孔，然后曝光和显影以形成抗蚀孔（171）。 通过抗蚀剂孔蚀刻绝缘层以形成绝缘孔（131）。 蚀刻栅电极以形成栅极孔（141），然后除去光致抗蚀剂。 在暴露的阴极上形成发光体。
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公开(公告)号：KR1020080040241A
公开(公告)日：2008-05-08
申请号：KR1020060107933
申请日：2006-11-02
Applicant: 삼성전자주식회사
IPC: H01L29/772 , B82Y10/00
CPC classification number: H01L51/0002 , B82Y10/00 , H01L51/0048 , H01L51/0545 , Y10S977/936 , Y10S977/938
Abstract: An electronic device, a field effect transistor, and a method for manufacturing the same are provided to prevent thermal damage of a substrate and elements by growing a carbon nano tube by heating a heating element at room temperature. A first electrode(110) and a second electrode(120) are formed in parallel to each other on a substrate(102). The first and second electrodes include two electrode pads and heating elements for connecting the electrode pads with each other. A catalytic metal layer(116) is formed on the heating element of the first electrode. A carbon nano tube(130) is grown horizontally from the catalytic metal layer to be connected to the second electrode. The heating elements are separated from the substrate by etching the substrate of lower parts of the heating elements.
Abstract translation: 提供电子装置，场效应晶体管及其制造方法，以通过在室温下加热加热元件来生长碳纳米管来防止基板和元件的热损伤。 第一电极（110）和第二电极（120）在基板（102）上彼此平行地形成。 第一和第二电极包括用于将电极焊盘彼此连接的两个电极焊盘和加热元件。 催化金属层（116）形成在第一电极的加热元件上。 碳纳米管（130）从催化金属层水平生长以连接到第二电极。 通过蚀刻加热元件的下部的基板将加热元件与基板分离。
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