Abstract:
본원은, 그래핀 전극-분자 박막 복합 구조체에 관한 것으로서, 구체적으로, 제 1 그래핀 전극 및 제 2 그래핀 전극 사이에 형성된 자기조립 단분자층을 포함하며, 상기 제 1 그래핀 전극과 상기 자기조립 단분자층은 화학적으로 결합된 것이며, 상기 제 2 그래핀 전극과 상기 자기조립 단분자층은 물리적으로 결합된 것인, 그래핀 전극-분자 박막 복합 구조체에 관한 것이다.
Abstract:
The present invention relates to a transparent electrode and a manufacturing method thereof. The transparent electrode according to one embodiment of the present invention includes a transparent substrate; a self-assembled monolayer formed on the transparent electrode; and a metal nanowire layer formed on the self-assembled monolayer.
Abstract:
The present invention relates to a field effect transistor using phosphorus-doped graphene, a method of preparing the same, phosphorus-doped graphene, and a method of preparing the same. The field effect transistor according to one embodiment of the present invention includes a source electrode and a drain electrode which are formed on a substrate, respectively; and a channel layer including phosphorous-doped graphene. According to one embodiment of the present invention, the channel layer is electrically connected to the source electrode and the drain electrode.
Abstract:
PURPOSE: A field effect transistor using N-doped graphene and a manufacturing method thereof are provided to reduce an off current and maintain a high charge mobility by doping graphene with inorganic materials. CONSTITUTION: An oxide layer(200) is formed on a base material(100). A source electrode(300) and a drain electrode(400) are formed on both sides of the oxide layer. A channel layer(500) is electrically connected to the source electrode and the drain electrode. The channel layer includes N-doped graphene by inorganic materials(600). The inorganic materials include nanoparticles of metal, metal oxide, metal sulfide, and metal halide. The size of the inorganic material is 1 to 100 nm.
Abstract:
PURPOSE: A mass production method of a reduced graphene oxide, a reduced graphene oxide manufactured thereby, a reduced graphene oxide film using the same, and a manufacturing method thereof are provided to use the reduced graphene oxide in the production of various electron elements by easily dispersing the reduced graphene oxide in water or in an organic solvent. CONSTITUTION: A mass production method of a reduction graphene oxide includes following steps; a step which produces a graphene oxide dispersion solution by mixing a solution containing a graphene oxide and a dispersing agent; and a step which forms the reduced graphene oxide by adding a mixed reducing agent containing a reducing agent with a halogen element and weak acid into the graphene oxide dispersed solution. The reducing agent with the halogen element has elements selected from HI, HCl, HBr, or their combinations. The dispersing agent includes elements selected from the group composed of poly(sodium 4-styrenesulfonate), pyrenebutyric acid, sodium dodesilsulfate, carboxymethyl cellulose, carboxypropyl cellulose, hydroxyethyl cellulose, starch, gelatine, a gelatine derivative, an aminoacid polymer, polylysine, polyaspartic acid, polyacrylate, polyethylene sulfonate, polystyrene sulfonate, polymethacrylate, polysulfonate, aromatic sulfonate, a condensation product of formaldehyde, naphthalenesulfonate, lignin sulfonate, a copolymer of an acrylic monomer, polyethyleneimine, polyvinyl amine, polyalryl amine, polyvinyl amine, poly (2-vinylpyridine), a block co-polyether, a block co-polyether with a polystyrene block, poly dialryldimethyl ammonium chloride, pyrene carboxylic acid, pyrene sulfonate, and their combinations. [Reference numerals] (AA) Dispersing agent; (BB) Easily dispersible reduced graphene oxide in water or an organic solvent
Abstract:
PURPOSE: A method for fabricating a field effect transistor based on a reduced graphene oxide using a floor contact graphene oxide is provided to efficiently manufacture a graphene oxide channel having a single layer or a few layers by using solution pre-processing and spin coating which can improve solvent dispersion. CONSTITUTION: A silicon oxide substrate(120) is formed on a silicon substrate(110). An electrode(130) reacting with a source electrode and a drain electrode is formed on the silicon oxide substrate. A graphene oxide dispersion solution is coated on the substrates. A graphene oxide is adsorbed between the drain electrode and the source electrode. The adsorbed graphene oxide is reduced.
Abstract:
PURPOSE: A centrifuge-based continuous synthesizing and refining apparatus of graphene oxide for mass-production and a method for synthesizing and refining the graphene oxide are provided to facilitate a synthesizing and refining process with respect to graphene oxide by implementing a centrifugal process several times. CONSTITUTION: A centrifuge-based continuous synthesizing and refining apparatus of graphene oxide for mass-production includes an injecting part(10) and a discharging part(20). A solution containing graphene oxide, diluted strong acid, or a solvent is injected into the injecting part as a rotor. A solution containing impurities is discharged to the outside of the apparatus through the discharging part. The impurities are separated from the solution containing the graphene oxide based on the rotation of the rotor. The discharging part is operated by an external signal. The discharging part includes a valve.