투명 전극 및 이의 제조 방법
    48.
    发明公开
    투명 전극 및 이의 제조 방법 有权
    透明电极及其制造方法

    公开(公告)号:KR1020140109835A

    公开(公告)日:2014-09-16

    申请号:KR1020140038831

    申请日:2014-04-01

    Inventor: 이효영 이한림

    CPC classification number: H01B5/14 H01B13/00

    Abstract: The present invention relates to a transparent electrode and a manufacturing method thereof. The transparent electrode according to one embodiment of the present invention includes a transparent substrate; a self-assembled monolayer formed on the transparent electrode; and a metal nanowire layer formed on the self-assembled monolayer.

    Abstract translation: 本发明涉及一种透明电极及其制造方法。 根据本发明的一个实施方式的透明电极包括透明基板; 形成在透明电极上的自组装单层; 以及形成在自组装单层上的金属纳米线层。

    N―도핑된 그래핀을 이용한 전계효과 트랜지스터 및 그의 제조 방법
    50.
    发明公开
    N―도핑된 그래핀을 이용한 전계효과 트랜지스터 및 그의 제조 방법 有权
    使用N-DOPED GRAPHENE的场效应晶体管及其制备方法

    公开(公告)号:KR1020130027199A

    公开(公告)日:2013-03-15

    申请号:KR1020110090645

    申请日:2011-09-07

    Inventor: 이효영 유희준

    CPC classification number: H01L29/772 H01L29/1606 H01L29/513 H01L29/7802

    Abstract: PURPOSE: A field effect transistor using N-doped graphene and a manufacturing method thereof are provided to reduce an off current and maintain a high charge mobility by doping graphene with inorganic materials. CONSTITUTION: An oxide layer(200) is formed on a base material(100). A source electrode(300) and a drain electrode(400) are formed on both sides of the oxide layer. A channel layer(500) is electrically connected to the source electrode and the drain electrode. The channel layer includes N-doped graphene by inorganic materials(600). The inorganic materials include nanoparticles of metal, metal oxide, metal sulfide, and metal halide. The size of the inorganic material is 1 to 100 nm.

    Abstract translation: 目的:提供使用N掺杂石墨烯的场效应晶体管及其制造方法,以通过用无机材料掺杂石墨烯来减小截止电流并保持高的电荷迁移率。 构成:在基材(100)上形成氧化物层(200)。 源极电极(300)和漏电极(400)形成在氧化物层的两侧。 沟道层(500)与源电极和漏电极电连接。 沟道层包括无机材料(600)的N掺杂石墨烯。 无机材料包括金属,金属氧化物,金属硫化物和金属卤化物的纳米颗粒。 无机材料的尺寸为1〜100nm。

Patent Agency Ranking