Abstract:
본원은, 그래핀 전극-분자 박막 복합 구조체에 관한 것으로서, 구체적으로, 제 1 그래핀 전극 및 제 2 그래핀 전극 사이에 형성된 자기조립 단분자층을 포함하며, 상기 제 1 그래핀 전극과 상기 자기조립 단분자층은 화학적으로 결합된 것이며, 상기 제 2 그래핀 전극과 상기 자기조립 단분자층은 물리적으로 결합된 것인, 그래핀 전극-분자 박막 복합 구조체에 관한 것이다.
Abstract:
The present invention relates to a transparent electrode and a manufacturing method thereof. The transparent electrode according to one embodiment of the present invention includes a transparent substrate; a self-assembled monolayer formed on the transparent electrode; and a metal nanowire layer formed on the self-assembled monolayer.
Abstract:
The present invention relates to a field effect transistor using phosphorus-doped graphene, a method of preparing the same, phosphorus-doped graphene, and a method of preparing the same. The field effect transistor according to one embodiment of the present invention includes a source electrode and a drain electrode which are formed on a substrate, respectively; and a channel layer including phosphorous-doped graphene. According to one embodiment of the present invention, the channel layer is electrically connected to the source electrode and the drain electrode.
Abstract:
PURPOSE: A field effect transistor using N-doped graphene and a manufacturing method thereof are provided to reduce an off current and maintain a high charge mobility by doping graphene with inorganic materials. CONSTITUTION: An oxide layer(200) is formed on a base material(100). A source electrode(300) and a drain electrode(400) are formed on both sides of the oxide layer. A channel layer(500) is electrically connected to the source electrode and the drain electrode. The channel layer includes N-doped graphene by inorganic materials(600). The inorganic materials include nanoparticles of metal, metal oxide, metal sulfide, and metal halide. The size of the inorganic material is 1 to 100 nm.