Abstract:
PURPOSE: A silicon solar cell and a manufacturing method thereof are provided to remarkably reduce reflectivity by reducing light entered from outside through surface texturing to be re-reflected. CONSTITUTION: An emitter layer of conductive type which is opposite to a silicon substrate is formed on the silicon substrate(S210). A self-assembled monolayer film of a colloidal particle is formed on the emitter layer(S220). The surface of the emitter layer is textured by performing metallic catalyst chemical etching by using the self-assembled monolayer film as a mask(S230). A metal particle and the self-assembled monolayer film remaining after metallic catalyst chemical etching are eliminated(S240). [Reference numerals] (AA) Start; (BB) End; (S210) An emitter layer of opposite conductive type is formed on a silicon substrate; (S220) A self-assembled monolayer film of a colloidal particle is formed on the emitter layer; (S230) Metallic catalyst chemical etching is performed; (S240) A remaining metal particle and the self-assembled monolayer film are eliminated
Abstract:
본 명세서에서는 비구면 형태의 실리콘 몰드, 마이크로 렌즈 어레이 및 상기 실리콘 몰드와 마이크로 렌즈 어레이를 제조하는 방법을 제공한다. 본 명세서의 일 실시예에 따른 비구면 형태의 실리콘 몰드를 제조하는 방법은 기판의 일면에 산화막을 증착하고, 상기 증착한 산화막에 포토 레지스트를 도포하는 단계, 상기 도포된 포토 레지스트에 소정의 간격을 가지도록 패터닝하여 포토 레지스트 마스크를 형성하는 단계, 상기 패터닝된 포토 레지스트 마스크에 대하여 소정의 전해질 용액으로 에칭하는 단계, 및 상기 에칭이 완료된 기판의 산화막을 제거하는 단계를 포함하며, 상기 전해질 용액은 HF와 DMSO가 포함되어 있는 것을 특징으로 한다.
Abstract:
PURPOSE: A solar cell using a wire array and a manufacturing method thereof are provided to improve the efficiency of the solar cell at a wide temperature range by preventing the recombination of carriers at low and high temperatures by minimizing a moving distance of minority carriers. CONSTITUTION: A substrate(300) and a wire(312) are formed on a wire array. A transparent electrode layer(320) is formed on the surface of the wire array. A filling layer(330) made of insulation materials fills a space between wires with the transparent electrode layer. A top transparent electrode layer(340) is formed on the upper surface of the filling layer. A top electrode(350) is formed on the upper surface of the transparent electrode layer.