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公开(公告)号：KR1020120109239A
公开(公告)日：2012-10-08
申请号：KR1020110027706
申请日：2011-03-28
Applicant: 한국생산기술연구원
Abstract: PURPOSE: A copper member for forming a closed chamber, having a hybrid joint structure by high-energy density welding and a welding method thereof are provided to obtain improved heat sink effect because upper and lower joint plates are formed of copper materials having high conductivity. CONSTITUTION: A copper member comprises an upper joint plate(10) and a lower joint plate(20). A closed chamber(12) filled with a functional material is formed between the upper and lower joint plates. Each of the upper and lower joint plates includes a body with an extended adhesion surface coated with an adhesive(30). A fixing part is formed in a projection shape on one or both of the extended adhesion surfaces of the upper and lower joint plates and contacts the other to directly deliver the energy created by high-energy density welding to the other adhesion surface and melt together with the adhesion surfaces of the upper and lower joint plates, thereby fixing the upper and lower joint plates.
Abstract translation: 目的：提供一种用于形成具有通过高能量密度焊接的混合接头结构的闭合室的铜构件及其焊接方法，以获得改善的散热效果，因为上部和下部接合板由具有高导电性的铜材料形成。 构成：铜构件包括上接合板（10）和下接合板（20）。 填充有功能材料的封闭室（12）形成在上和下接合板之间。 上和下接合板中的每一个包括具有涂覆有粘合剂（30）的延伸的粘合表面的主体。 固定部分形成在上下接合板的一个或两个延伸的粘合表面上的一个或两个上，并与另一个接触，以将由高能量密度焊接产生的能量直接传递到另一个粘合表面，并与 上接合板和下接合板的粘合表面，从而固定上和下接合板。
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公开(公告)号：KR1020110129201A
公开(公告)日：2011-12-01
申请号：KR1020100048707
申请日：2010-05-25
Applicant: 한국생산기술연구원
CPC classification number: H01L24/83 , H01L2224/83 , H01L2924/40
Abstract: PURPOSE: A flip chip bonding method which uses an adhesive layer including a thermo-reversible resin is provided to not use a solvent in a printing process of the adhesive layer on a substrate, thereby preventing air gap generation in the adhesive layer. CONSTITUTION: A mixture in a liquid state is acquired by mixing a hardener and catalyst into a liquid state resin(S10). The shape of the liquid state resin is reversibly changed by heat. The mixture is liquidized by heating when a solidification process of the mixture is proceeded(S15). An adhesive layer is arranged by printing the mixture of the liquid state on a substrate(S20). The adhesive layer is solidified to a solid state(S30). A chip is welded on the substrate by applying heat and pressure(S40).
Abstract translation: 目的：提供使用包含热可逆树脂的粘合剂层的倒装芯片接合方法，以在基板上的粘合剂层的印刷工艺中不使用溶剂，从而防止粘合剂层中的气隙产生。 构成：通过将固化剂和催化剂混合到液态树脂中来获得液态混合物（S10）。 液态树脂的形状被热可逆地变化。 当混合物的凝固过程进行时，通过加热将混合物液化（S15）。 通过将液体状态的混合物印刷在基板上来设置粘合剂层（S20）。 粘合剂层固化成固态（S30）。 通过施加热和压力将芯片焊接在基板上（S40）。
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公开(公告)号：KR1020110120645A
公开(公告)日：2011-11-04
申请号：KR1020100040142
申请日：2010-04-29
Applicant: 한국생산기술연구원
IPC: B23K35/368 , B23K9/04
Abstract: PURPOSE: A metal cored wire for overlay welding is provided to predict state of welding portion by constantly maintaining the dilution ratio of a bead after working. CONSTITUTION: A metal cored wire for overlay welding comprises an exterior skin(10) and a filling member(20). The filling member comprises flux powder and alloy power. In order to control the dilution ratio, the flux powder adds Mn, Al, Si, Ti, ZrO2, NaF, MgF2. The alloy power makes the Fe-Cr-C alloy as a fundamental composition. The final alloy composition of the welding portion after welding according to the controlled dilution ratio determines the mass rate of C and Cr in order to get near to the deformation organic phase transformation boundary line transformed to the martensite.
Abstract translation: 目的：提供一种用于重叠焊接的金属芯线，用于通过不断保持工作后的焊道稀释比来预测焊接部分的状态。 构成：用于覆盖焊接的金属芯线包括外表皮（10）和填充构件（20）。 填充构件包括焊剂粉末和合金电力。 为了控制稀释比，助熔粉添加Mn，Al，Si，Ti，ZrO2，NaF，MgF2。 合金功率使Fe-Cr-C合金成为基本组成。 根据受控稀释比，焊接后的焊接部分的最终合金组成决定了C和Cr的质量比，以便接近转变为马氏体的变形有机相变边界线。
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公开(公告)号：KR100871093B1
公开(公告)日：2008-11-28
申请号：KR1020070026974
申请日：2007-03-20
Applicant: 한국생산기술연구원
Abstract: 본 발명은 나노급 미세패턴회로 및 그의 제조방법에 관한 것으로 특히, 직육면 판체 형상을 갖는 탄소 유리의 상면에 집속 이온 빔을 정해진 폭과 간격을 두고 조사하여 나노미터 급의 폭과 깊이를 갖는 요홈들을 형성하는 단계와; 폴리이미드 판을 가열하여 가융성을 갖도록 하는 단계와; 요홈이 구비된 상기 탄소 유리의 상면에 가융성을 갖는 폴리이미드 판을 올려놓고 프레스를 통해 가압하여 폴리이미드 판의 저면에 연속되는 나노미터 급의 철부와 요부를 형성시키는 단계와; 상기 폴리이미드 판을 냉각시켜 가융성을 제거한 후 탄소 유리로부터 분리시키는 단계와; 상기 폴리이미드 판을 플라즈마 가스체 내에 넣고 플라즈마 처리하여 폴리이미드 판의 요부와 철부를 포함하여 그 상면부에 전기 도금 또는 무전해 도금에 의한 구리 도금층이 형성되도록 하는 단계와; 전해연마를 통해 폴리이미드 판의 철부를 포함한 상면에 도포된 구리 도금층을 제거하고 요부 내에 도금된 구리 도금층을 미세패턴회로로 형성하는 단계;로 이루어진 것을 특징으로 한다.
따라서, 비교적 복잡하고 매우 미세한 나도급 미세패턴회로를 비교적 간단하고 용이하면서도 정확하게 형성할 수 있어 각종 전자제품을 보다 경량화 및 소형화할 수 있는 것이다.
나노미터, 미세패턴회로, 탄소 유리, 집속 이온 빔, 폴리이미드 판-
公开(公告)号：KR100828971B1
公开(公告)日：2008-05-13
申请号：KR1020060131942
申请日：2006-12-21
Applicant: 한국생산기술연구원
CPC classification number: H01L2224/16225 , H01L23/14 , H01L21/0231 , H01L21/447 , H01L21/4867
Abstract: A method for mounting a chip or a strap on a transparent substrate is provided to enable an adhesive agent to be quickly cured by mounting the chip using UV curing paste. A conductive pattern is formed on a transparent substrate(10). A transmissive window is formed on a bonding portion, on which a chip(100) or a strap is mounted. The conductive pattern is formed, such that a UV(Ultra-Violet) ray is irradiated thereon through the transmissive window. UV curing paste(30) is applied on the transmissive window. The chip or the strap is aligned on the transmissive window of the bonding portion, and the chip or strap is pressed on the transmissive window. When the chip or strap is aligned, the UV ray is irradiated on transmissive window through the transparent substrate, such that the UV curing paste is cured.
Abstract translation: 提供将芯片或带子安装在透明基板上的方法，以通过使用UV固化膏安装芯片来使粘合剂快速固化。 在透明基板（10）上形成导电图案。 透明窗形成在粘合部分上，其上安装有芯片（100）或带。 形成导电图案，使得通过透射窗照射UV（超紫色）射线。 紫外线固化膏（30）涂在透光窗上。 芯片或带子在接合部分的透射窗上对准，并且芯片或带子被按压在透射窗口上。 当芯片或带对准时，通过透明基板将紫外线照射在透射窗上，使UV固化糊固化。
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Patent Agency Ranking
公开(公告)号：KR100813286B1
公开(公告)日：2008-03-13
申请号：KR1020060131943
申请日：2006-12-21
Applicant: 한국생산기술연구원
CPC classification number: H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/00
Abstract: An underfilling method is provided to enhance productivity by shortening an underfilling time and to improve reliability of a junction part by reducing an error rate. An inorganic filler(131) of a powder type is coated on a substrate(110) including a pattern(111). A preprocess is performed to expose the pattern to the outside and to coat only a part of the pattern covered by a chip or a die. A die bonding process is performed to bond the chip or the die on the pattern exposed by the preprocess. An injection process is performed to inject a polymer adhesive without the inorganic filler into a gap between the chip or the die and the substrate. The inorganic filler is coated through a cold spray coating method.
Abstract translation: 提供了一种底部填充方法，以通过缩短填充时间来提高生产率，并通过降低错误率来提高接合部件的可靠性。 将粉末类型的无机填料（131）涂覆在包括图案（111）的基板（110）上。 执行预处理以将图案暴露于外部并且仅涂覆由芯片或芯片覆盖的图案的一部分。 执行管芯接合工艺以将芯片或裸片接合在由预处理暴露的图案上。 进行注射处理以将没有无机填料的聚合物粘合剂注入到芯片或芯片与基板之间的间隙中。 通过冷喷涂法涂覆无机填料。
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公开(公告)号：KR100797161B1
公开(公告)日：2008-01-23
申请号：KR1020070050905
申请日：2007-05-25
Applicant: 한국생산기술연구원
CPC classification number: B23K35/262 , C22C13/00 , C22C13/02
Abstract: A Sn-Ag-Cu-In quaternary Pb-free solder composition is provided to suppress an increase in the cost of the Pb-free solder composition and sufficiently secure processability and mechanical properties of the Pb-free solder composition as a solder material by adding a proper amount of indium(In) and optimizing the content of silver(Ag). A Sn-Ag-Cu-In quaternary Pb-free solder composition comprises not less than 0.3% to less than 2.5% by weight of silver(Ag), not less than 0.2% to less than 2% by weight of copper(Cu), not less than 0.2% to less than 0.8% by weight of indium(In), and the balance of tin(Sn). The Sn-Ag-Cu-In quaternary Pb-free solder composition further comprises not less than 0.0001% to less than 1% by weight of one element or a mixture of at least two elements selected from phosphorous(P), germanium(Ge), gallium(Ga), aluminum(Al), and silicon(Si). to improve oxidation resistance of the Pb-free solder composition. The Sn-Ag-Cu-In quaternary Pb-free solder composition further comprises not less than 0.0001% to less than 2% by weight of one element or a mixture of at least two elements selected from zinc(Zn) and arsenic(As) to improve interfacial reaction characteristics of the Pb-free solder composition.
Abstract translation: 提供Sn-Ag-Cu-In四元无铅焊料组合物，以抑制无铅焊料组合物的成本增加，并通过添加来充分确保无铅焊料组合物作为焊料材料的加工性能和机械性能 适量的铟（In）和优化银（Ag）的含量。 Sn-Ag-Cu-In四元无铅焊料组合物含有不小于0.3重量％至小于2.5重量％的银（Ag），不少于0.2重量％至小于2重量％的铜（Cu） ，不小于0.2％至小于0.8重量％的铟（In），余量为锡（Sn）。 Sn-Ag-Cu-In四次无铅焊料组合物还包含不少于0.0001％至小于1重量％的一种元素或至少两种选自磷（P），锗（Ge） ，镓（Ga），铝（Al）和硅（Si）。 以提高无铅焊料组合物的耐氧化性。 Sn-Ag-Cu-In四次无铅焊料组合物还包含不少于0.0001％至小于2重量％的一种元素或至少两种选自锌（Zn）和砷（As）的元素的混合物， 以提高无铅焊料组合物的界面反应特性。
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公开(公告)号：KR100628831B1
公开(公告)日：2006-09-27
申请号：KR1020050022825
申请日：2005-03-18
Applicant: 한국생산기술연구원 , 세화엔지니어링 주식회사
Abstract: 본 발명은 텅스텐탄화물을 18~30 wt%, Mo+Si를 5~10 wt%, 잔부가 Fe 및 기타 불가피한 불순물로 구성된 것을 특징으로 한다.
이와 같은 구성의 본원발명에 따르면, 제조단가가 저렴하면서 우수한 내마모성을 갖는 하드페이싱 용접재료의 제조가 가능하며, 또한 용접시 인체에 유해한 크롬 증기가 발생하지 않기 때문에 작업환경의 개선 효과가 뛰어나다.
육성용접, 하드페이싱, 용접와이어, 메탈코어드, 텅스텐탄화물, 내마모성-
公开(公告)号：KR100628828B1
公开(公告)日：2006-09-27
申请号：KR1020050022823
申请日：2005-03-18
Applicant: 한국생산기술연구원 , 세화엔지니어링 주식회사
Abstract: 본 발명은 텅스텐탄화물의 함량이 50~90 wt%인 초경합금 분말에 오스테나이트 안정화 원소를 첨가하여 혼합한 분말과 철계 스트립을 사용하여 메탈코어드 용접와이어를 제조하는 것으로, 와이어에서 텅스텐탄화물의 유효함량이 22.5~30.0 wt%이고 Mn, C 등과 같은 오스테나이트 안정화 원소의 함량이 Ni 당량으로 0.05~0.2 wt%인 것을 특징으로 한다.
상기의 용접와이어로 하드페이싱한 육성용접층은 10~25 vol%의 텅스텐탄화물 분산상과 오스테나이트를 주성분으로 하는 기지상으로 이루어진 아공정 미세조직을 특징으로 하며, 40~50 HRC의 경도를 나타내지만 적정량의 고경도 분산상과 기지상의 오스테나이트화로 인해 내마모성과 함께 뛰어난 내충격성을 나타낸다.
육성용접, 하드페이싱, 용접와이어, 메탈코어드, 텅스텐탄화물, 오스테나이트 안정화 원소, 내마모성, 내충격성-
公开(公告)号：KR1020040089270A
公开(公告)日：2004-10-21
申请号：KR1020030022977
申请日：2003-04-11
Applicant: 한국생산기술연구원
IPC: A61L27/06
Abstract: PURPOSE: A method for surface modification of an implant formed of titanium or titanium alloys is provided to increase the contact area with osseous tissue and to form an oxidized coating layer formed of TiO2 present in a mixed phase of anatase with rutile on the surface of the implant. CONSTITUTION: The method comprises the steps of: rotating an implant; spraying sand microparticles to the surface of the implant by using a blasting gun; standing the blasted implant in a space having a certain oxygen volume flow and increasing the temperature of the implant in a constant heating rate to perform heating oxidation treatment so that an oxidized layer is formed on the surface of the implant; and evaluating wettability of the implant by measuring the contact angle between the surface of the implant and water, evaluating cytotoxicity of the implant and judging bioavailability of the implant.
Abstract translation: 目的：提供由钛或钛合金形成的植入物进行表面改性的方法，以增加与骨组织的接触面积，并形成氧化涂层，其形成于锐钛矿与金红石混合相中的TiO 2表面上 注入。 构成：该方法包括以下步骤：旋转植入物; 通过使用喷枪将砂微粒喷射到植入物的表面; 将具有一定氧气体积流动的空间中的喷砂植入物放置并以恒定的加热速率增加植入物的温度以进行加热氧化处理，使得在植入物的表面上形成氧化层; 以及通过测量植入物表面和水之间的接触角来评估植入物的润湿性，评估植入物的细胞毒性并判断植入物的生物利用度。
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