公开(公告)号：KR100902159B1

公开(公告)日：2009-06-10

申请号：KR1020070057623

申请日：2007-06-13

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  양윤철

IPC: C08G73/10 ,  C08J5/22 ,  G02F1/1337

CPC classification number: C08G73/10 ,  C08G73/1039 ,  C08G73/1064 ,  C08G73/1078 ,  C09D179/08 ,  G02F1/133723 ,  G02F1/133788

Abstract: 본 발명은 지방족 고리계 고경도저온공정형 가용성 폴리이미드 광배향막의 제조방법에 관한 것으로서, 보다 상세하게는 지방족 고리계 산이무수물을 적정 비율 이상 포함하는 산이무수물과 방향족 디아민을 적정비율 이상 포함하는 방향족 디아민류를 용액 중합함으로써 제조된 신규한 가용성폴리이미드 광배향막 및 그의 제조방법에 관한 것으로서 해당 조성물은 저온공정성, 우수한 내열성, 표면경도, 투명성 및 편광자외선에 액정의 배향성을 제공하는 특징을 가지고 있다.
본 발명의 신규 액정배향막용 가용성폴리이미드들로 제조된 박막은 표면 조도가 낮고, 전도성 유리(ITO glass)에 대한 인쇄성이 우수할 뿐만 아니라 내열성 및 투명성이 매우 우수하며, 이들로부터 제작된 액정 셀은 0.1∼1.0° 범위의 낮은 선경사각 및 상온에서 98% 이상의 우수한 전압보유율을 제공하는 특징이 있다.
가용성폴리이미드, 광배향막, 플라스틱기판용, 고경도, 저온공정성, 고내열성, 투명성, 전압보유율, 선경사각

公开(公告)号：KR100878449B1

公开(公告)日：2009-01-19

申请号：KR1020070079440

申请日：2007-08-08

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  최유정

IPC: H01L29/786 ,  H01L21/31

CPC classification number: H01L51/052 ,  H01L51/0529

Abstract: A surface treatment method of organic insulator capable of improving transistor property and organic thin film transistor using the same are provided to improve crystal property of organic semiconductor by using hydrophobic material on organic insulation film. A hydrophobic surface treatment layer is formed by reacting thiol compound on a surface of an organic insulation film. In the organic insulation film, unsaturated bonding is generated on the surface. The organic insulation film is made of polyimide or polyimide copolymer having the unsaturated bonding and mass average molecular weight of 5000~1000000. A reaction of the thiol compound and the organic insulation thin film surface is generated by contacting an organic insulator surface on group saturated into the thiol compound.

Abstract translation: 提供能够提高晶体管性能的有机绝缘体的表面处理方法和使用其的有机薄膜晶体管，以通过在有机绝缘膜上使用疏水性材料来改善有机半导体的晶体性质。 通过使有机绝缘膜的表面上的硫醇化合物反应形成疏水性表面处理层。 在有机绝缘膜中，表面产生不饱和键。 有机绝缘膜由不饱和键和质均分子量为5000〜1000000的聚酰亚胺或聚酰亚胺共聚物制成。 通过使饱和的饱和的有机绝缘体表面与硫醇化合物接触来产生硫醇化合物和有机绝缘薄膜表面的反应。

公开(公告)号：KR100873997B1

公开(公告)日：2008-12-17

申请号：KR1020070057025

申请日：2007-06-12

Applicant: 한국화학연구원

Inventor： 안택 ,  이미혜 ,  석혜정

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: The method of manufacturing the organic thin film transistor is provided to improve the durability of the organic passivation and the element reliability. The method of manufacturing the organic thin film transistor comprises as follows. A step is for forming the organic passivation at the upper part of the organic layer transistor element. A step is for forming the hydrophobicity self-assembled monolayer on the surface of organic passivation. The organic passivation has -OH and made of water soluble polymer manufactured from monomer more than the first class. The hydrophobicity self-assembled monolayer is made of the compound selected from below chemical formula 1[R-SiX3]. In the equation, R is straight-chain or the branched-chain alkyl group of the C1~C100 which is or not substituted for the fluorine element or X is independently selected from the alkoxy radical of the halogen atom or C1~C5.

Abstract translation: 提供制造有机薄膜晶体管的方法以提高有机钝化的耐久性和元件的可靠性。 有机薄膜晶体管的制造方法如下。 步骤是在有机层晶体管元件的上部形成有机钝化。 一个步骤是在有机钝化物表面上形成疏水性自组装单层。 有机钝化物具有-OH并由由第一类单体制成的水溶性聚合物制成。 疏水性自组装单层由选自下述化学式1 [R-SiX 3]的化合物制成。 在该方程式中，R是直链或C1-C100的支链烷基，其是或不取代氟元素或X独立地选自卤素原子或C1-C5的烷氧基。

公开(公告)号：KR100873992B1

公开(公告)日：2008-12-17

申请号：KR1020070013494

申请日：2007-02-09

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  하선영

IPC: C08L79/08 ,  C08G73/10 ,  H01L29/786

Abstract: A low-temperature soluble polyimide resin blend composition is provided to improve the overall characteristics of an organic thin film transistor, particularly field effect mobility, by using the composition as an interlayer dielectric having reduced surface tension. A polyimide resin blend composition for a gate dielectric film of an organic transistor comprises 1-99 wt% of a soluble polyimide resin represented by the following formula 1, and 1-99 wt% of a soluble polyimide resin represented by the following formula 2. In the formulae, the formula A is at least one tetravalent group essentially including a specific aliphatic cyclic tetravalent group; the formula B is at least one divalent group; l is a natural number of 1-300; the formula C is at least one divalent group essentially including a divalent aromatic group having a pendant alkyl group; and m is a natural number of 1-300.

Abstract translation: 提供低温可溶性聚酰亚胺树脂共混组合物以通过使用该组合物作为具有降低的表面张力的层间电介质来改善有机薄膜晶体管的整体特性，特别是场效应迁移率。 一种用于有机晶体管的栅极电介质膜的聚酰亚胺树脂共混组合物，其包含1-99重量％的由下式1表示的可溶性聚酰亚胺树脂和1-99重量％的由下式2表示的可溶性聚酰亚胺树脂。 在式中，式A是至少一个基本上包括特定脂肪族环状四价基团的四价基团; 式B是至少一个二价基团; l是1-300的自然数; 式C是至少一个基本上包括具有侧链烷基的二价芳族基团的二价基团; m是1-300的自然数。

公开(公告)号：KR1020080074417A

公开(公告)日：2008-08-13

申请号：KR1020070013494

申请日：2007-02-09

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  하선영

IPC: C08L79/08 ,  C08G73/10 ,  H01L29/786

CPC classification number: C08L79/08 ,  C08G73/10 ,  H01L51/052

Abstract: A low-temperature soluble polyimide resin blend composition is provided to improve the overall characteristics of an organic thin film transistor, particularly field effect mobility, by using the composition as an interlayer dielectric having reduced surface tension. A polyimide resin blend composition for a gate dielectric film of an organic transistor comprises 1-99 wt% of a soluble polyimide resin represented by the following formula 1, and 1-99 wt% of a soluble polyimide resin represented by the following formula 2. In the formulae, the formula A is at least one tetravalent group essentially including a specific aliphatic cyclic tetravalent group; the formula B is at least one divalent group; l is a natural number of 1-300; the formula C is at least one divalent group essentially including a divalent aromatic group having a pendant alkyl group; and m is a natural number of 1-300.

Abstract translation: 提供低温可溶性聚酰亚胺树脂共混组合物，通过使用组合物作为具有降低的表面张力的层间电介质来改善有机薄膜晶体管的总体特性，特别是场效应迁移率。 用于有机晶体管的栅极电介质膜的聚酰亚胺树脂共混组合物包括1-99wt％的由下式1表示的可溶性聚酰亚胺树脂和1-99wt％由下式2表示的可溶性聚酰亚胺树脂。 式中式A为至少一个基本上包括特定的脂族环四价基团的四价基团; 式B为至少一个二价基团; l是1-300的自然数; 式C为至少一个二价基团，基本上包括具有烷基侧基的二价芳族基团; m是1-300的自然数。