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公开(公告)号:JPH07130283A
公开(公告)日:1995-05-19
申请号:JP29242693
申请日:1993-10-29
Applicant: AGENCY IND SCIENCE TECHN , TOPPAN PRINTING CO LTD
Inventor: ITO JUNJI , KANAMARU MASATAKE , ISHIZAKI MAMORU , MINATO TAKAO , YOSHIDA KANENORI
Abstract: PURPOSE:To provide an electron emission element which does not need especially high manufacture art as a cone type, and which hardly causes the short- circuiting by the breakage of each element completed and further which has electric property more excellent than that in the case of an edge type and equality and stability in electron emission. CONSTITUTION:This has an emitter 1, which is made by arranging a plurality of protrusions 11a made in rectangular shape in radially of centripetally, and a gate 2, which is provided near the emitter 1 so as to apply an electric field to the emitter 1. Two corners 10a whose heads are sharply pointed three- dimensionally are formed at the head of each protrusion 11 of the emitter 1. When an electric field is applied between the gate 2 and the emitter 1, electrons are emitted concentrically from each corner 10a.
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公开(公告)号:JPH0792173A
公开(公告)日:1995-04-07
申请号:JP26148093
申请日:1993-09-24
Applicant: AGENCY IND SCIENCE TECHN , EBARA RES CO LTD
Inventor: ITO JUNJI , TAIMA YASUSHI
IPC: G01Q70/10 , G01B5/28 , G01B7/34 , G01B21/30 , G01N27/00 , G01N37/00 , G01Q20/02 , G01Q60/38 , H01J37/28
Abstract: PURPOSE:To provide an interatomic force microscope, and a method for fabrication thereof, comprising a sharply pointed probe needle having a spring constant for supporting the probe needle at the free end thereof. CONSTITUTION:The cantilever for interatomic force microscope comprises a base material 11 of single crystal silicon having sufficient mechanical strength, a cantilever beam 12 of silicon oxide bonded at one end to the base material 11, and a cone type probe needle 13 formed at the free end, wherein the cantilever is entirely covered with a conductive thin film. Protective plates 15 are also provided on the opposite sides of the cantilever 12 by machining the base material 11 in order to protect the cantilever 12 against mechanical damage.
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公开(公告)号:JPH06347525A
公开(公告)日:1994-12-22
申请号:JP16001593
申请日:1993-06-07
Applicant: FUTABA DENSHI KOGYO KK , AGENCY IND SCIENCE TECHN
Inventor: ITO SHIGEO , WATANABE TERUO , TSUBURAYA KAZUHIKO , ITO JUNJI , KANAMARU MASATAKE , SUGIYAMA YOSHINOBU
IPC: G01R33/028 , G01R33/10 , H01J21/06 , H01J21/10
Abstract: PURPOSE:To provide a highly sensitive, compact, unexpensive magnetic sensor which is superior in environmental resistance and easy to handle. CONSTITUTION:A spint type FEC 2 is housed in a vacuum container 1 and the electrons discharged from an emitter thereof are directed in the vertical direction. When a magnetic field H6 is applied from the outside, the discharged electrons receive Lorentz's force and they are directed in the direction of an anode 3-2, so the anode 3-2 collects electrons increasingly, while the anode 3-1 collects them decreasingly. Therefore, the direction of the magnetic field H and its intensity can be detected by calculating the difference DELTAI=(I1-I2) between the currents flowing through two anodes.
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公开(公告)号:JPH04332423A
公开(公告)日:1992-11-19
申请号:JP3779491
申请日:1991-02-08
Applicant: FUTABA DENSHI KOGYO KK , AGENCY IND SCIENCE TECHN
Inventor: ITO JUNJI , KANAMARU MASATAKE , ITO SHIGEO , WATANABE TERUO , MIYAMORI MAKOTO , NISHIMURA NORIO
Abstract: PURPOSE:To prevent formation of an oxidizing layer at the end of an emitter of a field emitting element so as to prevent a drop of an emission current, unstable operation and an increase of noise. CONSTITUTION:In a field emitting element 1 provided with an emitter 8, a gate 5 and an anode 9, the surface of the gate 5 is made of a material having bonding force to oxygen stronger than that of at least the end surface of the emitter 8. An oxygen atom emitted into the gate 5 is securely caught so that formation of an oxidizing layer in the emitter 8 can be restrained. If portions other than the emitter 8 are made of a material having bonding force stronger than that of the end surface of the emitter 8, an oxidizing layer is further hard to be generated at the end surface of the emitter 8.
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公开(公告)号:JPS62172204A
公开(公告)日:1987-07-29
申请号:JP1536986
申请日:1986-01-27
Applicant: AGENCY IND SCIENCE TECHN
Inventor: ITO JUNJI , KANAYAMA TOSHIHIKO
Abstract: PURPOSE:To make it possible to measure relative displacement with high accuracy, by setting the cycle of one of two diffraction lattices to a value which is non-integer multiple (larger than 1) of the cycle of the other diffraction lattice. CONSTITUTION:Diffraction lattices A, B respectively having cycles dA, dB are arranged on objects 1, 2 parallelly-opposed to each other and the cycle dA is set to a value which is non-integer multiple (larger than 1) of the cycle dB. When coherent parallel luminous fluxes Ii is projected to the diffraction lattice A on the object 1, said luminous flux Ii is diffracted at angles + or -thetam to the surface normal of the diffraction lattice, determined by diffraction order (m), the cycle dA and a wavelength lambda to become I(+ or -m). These luminous fluxes I(+ or -m) are further diffracted by n-order by the diffraction lattice B having the cycle dB on the object 2 to be emitted at angles being + or -thetas to become signal lights I(m, -n), I(-m, n). When the cycle of one diffraction lattice is a value which is non-integer multiple (larger than 1) of the cycle of the other diffraction lattice, these multiple diffracted lights are emitted at angles respectively different from the emitting angles +thetas of signal lights and, therefore, the superposition of diffracted lights different in a route length to the signal lights can be avoided theoretically.
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公开(公告)号:JPS6225212A
公开(公告)日:1987-02-03
申请号:JP16523185
申请日:1985-07-26
Applicant: AGENCY IND SCIENCE TECHN
Inventor: ITO JUNJI , KANAYAMA TOSHIHIKO
Abstract: PURPOSE:To facilitate measurement and to obtain high accuracy by regarding a component of specific and single diffraction degree among diffracted wave motion components of a preceding stage diffraction grating as an effective incident wave motion component to a succeeding stage diffraction grating. CONSTITUTION:Diffraction phenomenon is caused by an initial-stage diffraction grating Da and diffracted light of specific degree obtained by diffracting the 1st effective diffracted part Da-1 by an angle +theta of diffraction, preferably, primary diffracted light Ia-1 and primary diffracted light Ia-2 obtained by diffracting the 2nd effective diffracted part Da-2 by an angle -theta of diffraction are incident on a nonsplit diffraction grating Db as a succeeding and final stage as the effective incident light component. Interference fringes with a period d/2 are formed on the succeeding stage diffraction grating Db corresponding to said diffracted light beams Ia-1 and Ia-1 and signal light Is consisting of only primary diffracted components is generated finally. Consequently, the quantity of in-surface relative displacement between bodies is measured in a fine displacement quantity range with high accuracy.
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公开(公告)号:JPH11354011A
公开(公告)日:1999-12-24
申请号:JP15748098
申请日:1998-06-05
Applicant: FUTABA DENSHI KOGYO KK , AGENCY IND SCIENCE TECHN
Inventor: ITO SHIGEO , ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To provide an electric field emitting cathode which emits electrons at low voltage. SOLUTION: An extracting electrode 6 is formed on an insulating layer 5, an opening 7 is formed on a lamination layer part of the insulating layer 5 and the extracting electrode 6, and an emitter 4a is provided inside the opening 7. The insulating layer 5 has a modified photoresist layer 4 modified by heating underneath it, and a cathode electrode 2 is connected electrically to this modified photoresist layer 4 via a resistance layer 3. The cathode electrode 2 is formed as a pattern on a cathode substrate 1 made of glass or the like. The emitter 4a is a tip of an extruding part of the modified photoresist layer 4 exposed from the insulating layer 5. The photoresist is modified with heat to bear conductivity and to have a stable electron-emitting property at a low voltage.
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公开(公告)号:JPH11102637A
公开(公告)日:1999-04-13
申请号:JP26380697
申请日:1997-09-29
Applicant: FUTABA DENSHI KOGYO KK , AGENCY IND SCIENCE TECHN
Inventor: HONDA KENICHI , KAGAWA NORITAKA , ITO SHIGEO , ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To provide a MOSFET type electron emission element wherein an emitter current is stable even in a low vacuum atmosphere. SOLUTION: A MOSFET type electron emission element 1 has a drain 3 and a source 4 of an n-type semiconductor on a surface of a substrate 2 of a p-type semiconductor. An emitter 5 of the n-type semiconductor is put on the surface of the drain 3. Gate electrodes 8 are provided so as to surround the emitter 5, on insulating layers 7 surrounding the drain 3 and the source 4. Control electrode 10 is provided near the gate electrode 8 on the insulating layer 7 between the drain 3 and the source 4. Shield electrode 12 which are electrically insulated from the gate electrodes 8 and the control electrodes 10 and are grounded directly or through the power source are provided on the surface of the insulating layers 7 on which the gate electrodes 8 and the control electrodes 10 are not formed. The insulating layers 7 are not charged due to gas, etc. Inversion layers are not generated in the substrate 2 under the insulating layers at the part except for the gate electrodes 8 and the control electrodes 10, and an extra current does not flow through unnecessary current paths. Thus, a runway of the emitter current does not occur, then an emission current of the emitter 5 is stabilized.
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公开(公告)号:JPH08264111A
公开(公告)日:1996-10-11
申请号:JP6571495
申请日:1995-03-24
Applicant: AGENCY IND SCIENCE TECHN
Inventor: ITO JUNJI , OKANO TAKESHI
Abstract: PURPOSE: To provide a cold electron emitting element which has an emitter where the apex angle of the tip is small and the tip is sharp and small. CONSTITUTION: A silicon substrate 11, where a reverse pyramid type recess 15 consisting of four side faces in (111) face azimuth is made in advance, is soaked in hydrofluoric acid solution. Next, the silicon substrate is scratchedly processed in acetone solution containing diamond fine powder, by ultrasonic vibration method, and then the silicon substrate 11 is soaked and anisotropically etched in tetramethyl ammonium hydroxide solution so as to form sharpened reverse pyramid type recesses 21. Diamond being emitter material 16 is made in the sharpened reverse pyramid type recess 21 by chemical vapor growth method, and than the silicon substrate 11 is removed, thus an emitter 17 for a cold electron emitting element, which has a sharp tip 22, is manufactured.
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公开(公告)号:JPH06308207A
公开(公告)日:1994-11-04
申请号:JP12187693
申请日:1993-04-26
Applicant: AGENCY IND SCIENCE TECHN
Inventor: SUGIYAMA YOSHINOBU , ITO JUNJI , KANAMARU MASATAKE
IPC: G01R33/028 , H01J1/30 , H01J21/18
Abstract: PURPOSE:To improve the sensitivity and environmental resistance of a magnetic sensor. CONSTITUTION:A magnetic sensor is constituted of a field emission type emitter electrode 1, a gate electrode 2 controlling the movement of the electrons emitted from the emitter electrode 1, and anode electrodes 3a, 3b capturing the electrons emitted from the emitter electrode 1. The anode electrodes 3a, 3b are separated into at least two, and the difference between the currents caused by the electrons fed to the anode electrodes 3a, 3b is measured. These constituting elements are arranged in a vacuum container.
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