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公开(公告)号：DE69614583D1
公开(公告)日：2001-09-27
申请号：DE69614583
申请日：1996-01-22
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITATANI TARO , MATSUMOTO KAZUHIKO , ISHII MASAMI , NAKAGAWA TADASHI , SUGIYAMA YOSHINOBU
IPC: H01L31/0232 , H01L31/108 , G02F1/00 , H01L31/0352
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公开(公告)号：JPH0297075A
公开(公告)日：1990-04-09
申请号：JP24954488
申请日：1988-10-03
Applicant: AGENCY IND SCIENCE TECHN , NIPPON SOKEN
Inventor： SUGIYAMA YOSHINOBU , TAKANO YOSHIKAZU , SOGA HAJIME
Abstract: PURPOSE:To obtain a magnetic sensor which is not saturated in sensitivity even with strong electric field driving and capable of outputting a high power by a method wherein two or more semiconductor layers of quantum well structure, whose energy level are higher than that of a two-dimensional electron gas layer, are provided. CONSTITUTION:Two or more semiconductor layers 5a-2, whose energy levels are higher than that of a two-dimensional electron gas layer 6, are provided to a heterojunction magnetic sensor that contains a heterojunction structure in which the two-dimensional electron gas layer 6 of high mobility if formed at a junction between different semiconductors, 4 and 5, whose energy gaps are different from each other. For instance, a non-doped GaAs layer 4, non- doped barrier layers 5a-1, non-doped quantum well layers 5a-2, a carrier supply layer 5b, and an Si doped GaAs layer 5c are successively formed on a semi- insulating GaAs substrate 7, where the number of the quantum well layers 5a-2 is two. And, Au-Ge ohmic electrodes 200 serving as a current terminal and a hole terminal are so formed as to have an ohmic contact with the above layers 4, 5a, 5b, and 5c.
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公开(公告)号：JPS6354785A
公开(公告)日：1988-03-09
申请号：JP19850886
申请日：1986-08-25
Applicant: AGENCY IND SCIENCE TECHN , NIPPON SOKEN
Inventor： SUGIYAMA YOSHINOBU , TAKANO YOSHIKAZU , TAGUCHI TAKASHI
IPC: H01L43/06
Abstract: PURPOSE:To obtain a magnetic sensor which has high mobility and an extremely thin film by forming a secondary electron gas layer and input/output electrodes having a plurality of ohmic contacts. CONSTITUTION:A secondary electron gas layer 6 and input/output electrodes 200 having ohmic contacts at a plurality of positions are formed in a hetero junction magnetic sensor having a hetero junction structure that the layer 6 of high mobility is formed at the junction of different type semiconductors 4, 5 of different band gaps. For example, a non-doped GaAs layer 4, a non-doped AlGaAs layer 5a, an Si-doped AlGaAs layer 5a, an Si-doped GaAs layer 5c are sequentially formed by an MBE on a semi-insulating GaAs substrate 7, and the layer 6 is formed on a boundary of the side of the layer 5 of the layer 4. The electrodes 200 which perform the function of the electrodes of a current terminal and a hole terminal are formed to have ohmic contacts with the layers 4, 5a, 5b, 5c.
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公开(公告)号：JPH0349242A
公开(公告)日：1991-03-04
申请号：JP18433289
申请日：1989-07-17
Applicant: AGENCY IND SCIENCE TECHN , NIPPON SOKEN
Inventor： SUGIYAMA YOSHINOBU , TAKANO YOSHIKAZU , SOGA HAJIME
IPC: H01L29/812 , H01L21/203 , H01L21/338 , H01L29/778
Abstract: PURPOSE:To obtain an FET free from damage of hetero crystal structure by a method wherein a semiconductor layer with low resistance is first formed and a part under a gate electrode is formed to have high resistance by ion implantation. CONSTITUTION:An FET is an active layer with a highly mobile two-dimensional electron gas layer 5 formed on junction between two kinds of semiconductor layers 2, 3 having different band gaps. The layer 3 comprises a semiconductor layer 3a (spacer layer) without impurities doped and a semiconductor layer 3b (carrier supply layer) with impurities doped. A cap layer is structured to have low resistance wherein a high resistance region 6 whose resistance has been raised by ion implantation is formed under a gate electrode 8 of this layer 4. Thus a self-aligning gate structured FET can be obtained in low temperature process without the need of high temperature process.
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公开(公告)号：JPS6414971A
公开(公告)日：1989-01-19
申请号：JP17171487
申请日：1987-07-09
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TAKANO YOSHIKAZU , SUGIYAMA YOSHINOBU
IPC: H01L29/205 , H01L21/338 , H01L29/778 , H01L29/80 , H01L29/812
Abstract: PURPOSE:To prevent the generation of remarkable decrease in carrier mobility even when a high magnetic field is impressed, to display sufficient resistivity and gain even in a microwave region, and to make it possible to perform a high speed operation by a method wherein a quantum well structure layer is formed in parallel with the interface of a heterojunction. CONSTITUTION:The first crystal growth layer 2, which is slightly doped in a P-type or N-type, is provided and an undoped crystal layer 31, having the energy band wider than the grown layer 2, and the purity as high as possible is provided on the layer 2. An undoped thin film layer 32 of the material same as the grown layer 2 and another undoped thin film layer 33 of the material same as the layer 31 are formed on the layer 31 successively. The energy level of the quantum well composed of the three layers 31, 32 and 33 is brought to the same degree or above of that of a heterojunction. The carrier obtained high energy in an active layer makes an actual space transition against a quantum well structure layer, the abnormal increase of the carrier density in the region can be suppressed, and a sufficient high-speed movement can be guaranteed even under a practical performance conditions.
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Patent Agency Ranking
公开(公告)号：JPH07159501A
公开(公告)日：1995-06-23
申请号：JP33988293
申请日：1993-12-07
Applicant: FUTABA DENSHI KOGYO KK , AGENCY IND SCIENCE TECHN
Inventor： ITO SHIGEO , TONEGAWA TAKESHI , ITO JUNJI , KANAMARU MASATAKE , SUGIYAMA YOSHINOBU
Abstract: PURPOSE:To provide a high-sensitivity, small three-dimensional magnetic sensor that is excellent in environmental resistance and easy to handle. CONSTITUTION:A two-split anode 4-, etc., and a gate 3-1 are formed on the respective portions of a substrate 1-1 and an emitter 2-1 is formed on an insulating layer. A two-split anode 4-3, etc., and a gate 3-2 are formed on the respective portions of a front substrate 1-2 and an emitter 2-2 is formed on an insulating layer. The direction and strength of three-dimensional magnetic flux supplied from the outside are determined from the amount of change of current flowing through each anode 4-1, 4-3, etc.
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公开(公告)号：JPH01245574A
公开(公告)日：1989-09-29
申请号：JP7397588
申请日：1988-03-28
Applicant: AGENCY IND SCIENCE TECHN , NIPPON SOKEN
Inventor： SUGIYAMA YOSHINOBU , TAKANO ITAKAZU , SOGA HAJIME
Abstract: PURPOSE:To obtain a magnetic sensor which is not saturated in sensitivity and able to output a high power even if being driven by a high electric field by a method wherein a semiconductor layer of a quantum well structure whose energy state is higher than that of a two-dimensional electron gas layer is provided. CONSTITUTION:A two-dimensional electron gas layer (2DEG layer) 6 high in mobility is formed at a heterojunction of two kinds of semiconductor layers 4 and 5 whose band gap are different from each other. The semiconductor layer 5 is composed of a semiconductor layer 5a(carrier supply layer) doped with impurity and a non-doped semiconductor layer 5b (space layer) and the layer 5a is provided with a quantum structure. Not only the 2DEG layer 6 but also the semiconductor layer is filled with surplus carriers generated through a high electric field, so that the 2DEG layer 6 is not saturated with the surplus carriers, and as surplus carriers are moved to the 2DEG layer 6 or the quantum well layer and improved in mobility, an average mobility of the carriers can be prevented from decreasing by the contribution to an electric conductivity made by the quantum well layer in parallel with the 2DEG layer.
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公开(公告)号：JPH08204225A
公开(公告)日：1996-08-09
申请号：JP808295
申请日：1995-01-23
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITAYA TARO , MATSUMOTO KAZUHIKO , ISHII MASAMI , NAKAGAWA ITARU , SUGIYAMA YOSHINOBU
IPC: G02B6/122 , H01L31/02 , H01L31/108 , H01L33/04 , H01L33/00
Abstract: PURPOSE: To simplify the process by forming a protective insulation structure for protecting an optical window simultaneously with definition of the region of the optical window when an optical window of predetermined width is formed on one surface of a photoelectric conversion function part engaged with reception or emission of light and an optical element, requiring nontransmissive conductive thin film on the opposite sides thereof, is fabricated. CONSTITUTION: A nontransmissive conductive thin film 12 formed on one surface of a photoelectric conversion function section 11 is partially transformed to obtain a protective insulation structure 15 for optical window having predetermined width W. Consequently, an optical window 13 having defined region is formed on the surface of the photoelectric conversion function section 11 under the protective insulation structure 15 for optical window.
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公开(公告)号：JPH08146066A
公开(公告)日：1996-06-07
申请号：JP29188494
申请日：1994-11-28
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITAYA TARO , NAKAGAWA ITARU , SUGIYAMA YOSHINOBU , OTA KIMIHIRO
Abstract: PURPOSE: To accurately measure a plurality of vector components of electric field vector on an electrical circuit with a high time resolution and a device therefor. CONSTITUTION: The measuring device consists of a laser, an optical element, an electrooptical crystal, a photoelectric conversion element, and an electrical circuit. An electrooptical crystal 43 with the change of refractive index in optical main axis direction due to electric field and the change in optical main axis direction selected and is arranged in an electric field generated by an electrical circuit 44 to be measured. Laser beams are applied to an electrooptical crystal and reflection light through the crystal is decomposed into two polarization directions and the is photoelectrically transduced by photoelectric transducing elements 52 and 53. By enabling the differential signal of electrical output to be a measurement signal and selecting two polarization directions of laser beams by a half-wavelength plate 46 which is an optical element, two signals corresponding to the change of refractive index of crystal and the change in optical main axis direction can be obtained and the two components of electric field vector can be obtained from the primacy combination of two signals, thus measuring the electric field components in a plurality of directions without deteriorating the reproducibility and accuracy of measurement and without mechanically moving the electrooptical crystal.
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公开(公告)号：JPH06308207A
公开(公告)日：1994-11-04
申请号：JP12187693
申请日：1993-04-26
Applicant: AGENCY IND SCIENCE TECHN
Inventor： SUGIYAMA YOSHINOBU , ITO JUNJI , KANAMARU MASATAKE
IPC: G01R33/028 , H01J1/30 , H01J21/18
Abstract: PURPOSE:To improve the sensitivity and environmental resistance of a magnetic sensor. CONSTITUTION:A magnetic sensor is constituted of a field emission type emitter electrode 1, a gate electrode 2 controlling the movement of the electrons emitted from the emitter electrode 1, and anode electrodes 3a, 3b capturing the electrons emitted from the emitter electrode 1. The anode electrodes 3a, 3b are separated into at least two, and the difference between the currents caused by the electrons fed to the anode electrodes 3a, 3b is measured. These constituting elements are arranged in a vacuum container.
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