公开(公告)号：US10580645B2

公开(公告)日：2020-03-03

申请号：US15966717

申请日：2018-04-30

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Ueda ,  Taishi Ebisudani ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

公开(公告)号：US20190333753A1

公开(公告)日：2019-10-31

申请号：US15966717

申请日：2018-04-30

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Ueda ,  Taishi Ebisudani ,  Toshiya Suzuki

IPC: H01L21/02

Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

公开(公告)号：US20190295837A1

公开(公告)日：2019-09-26

申请号：US16317774

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  H01L21/762 ,  C23C16/50

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US10381219B1

公开(公告)日：2019-08-13

申请号：US16171098

申请日：2018-10-25

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  Tomomi Takayama ,  Taishi Ebisudani ,  Toshiya Suzuki ,  Tomohiro Kubota

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455

Abstract: Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

公开(公告)号：US20180033606A1

公开(公告)日：2018-02-01

申请号：US15222715

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/50 ,  H01L21/762 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US09786492B2

公开(公告)日：2017-10-10

申请号：US15342943

申请日：2016-11-03

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H05H1/24 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31105 ,  H01L21/31111

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US09786491B2

公开(公告)日：2017-10-10

申请号：US14939984

申请日：2015-11-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H05H1/24 ,  H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31111

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20170140924A1

公开(公告)日：2017-05-18

申请号：US14939984

申请日：2015-11-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31111

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.