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    Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
    2.
    发明授权
    Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors 有权

    公开(公告)号：US10580645B2

    公开(公告)日：2020-03-03

    申请号：US15966717

    申请日：2018-04-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： Shinya Ueda ,  Taishi Ebisudani ,  Toshiya Suzuki

    IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/04

    Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

    PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) OF SiN USING SILICON-HYDROHALIDE PRECURSORS
    3.
    发明申请
    PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) OF SiN USING SILICON-HYDROHALIDE PRECURSORS 审中-公开

    公开(公告)号：US20190333753A1

    公开(公告)日：2019-10-31

    申请号：US15966717

    申请日：2018-04-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： Shinya Ueda ,  Taishi Ebisudani ,  Toshiya Suzuki

    IPC: H01L21/02

    Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

    Methods for forming a silicon nitride film
    4.
    发明授权
    Methods for forming a silicon nitride film 有权

    公开(公告)号：US10381219B1

    公开(公告)日：2019-08-13

    申请号：US16171098

    申请日：2018-10-25

    Applicant: ASM IP Holding B.V.

    Inventor： Shinya Ueda ,  Tomomi Takayama ,  Taishi Ebisudani ,  Toshiya Suzuki ,  Tomohiro Kubota

    IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455

    Abstract: Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

    METHOD AND SYSTEM FOR FORMING SILICON NITRIDE ON A SIDEWALL OF A FEATURE
    8.
    发明申请
    METHOD AND SYSTEM FOR FORMING SILICON NITRIDE ON A SIDEWALL OF A FEATURE 有权

    公开(公告)号：US20220108881A1

    公开(公告)日：2022-04-07

    申请号：US17449670

    申请日：2021-10-01

    Applicant: ASM IP Holding B.V.

    Inventor： Tomohiro Kubota ,  Shinya Ueda

    IPC: H01L21/02 ,  H01L21/311

    Abstract: Methods of forming silicon nitride on a sidewall of a feature are disclosed. Exemplary methods include providing a substrate comprising a feature comprising a sidewall surface and a surface adjacent the sidewall surface, forming a silicon oxide layer overlying the sidewall surface and the surface adjacent the sidewall surface, using a cyclical deposition process, depositing a silicon nitride layer overlying the silicon oxide layer, and exposing the silicon nitride layer to activated species generated from a hydrogen-containing gas. Exemplary methods can additionally include selectively removing a portion of the silicon nitride layer. Structures formed using the methods and systems for performing the methods are also disclosed.

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