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    Determination of stack difference and correction using stack difference
    41.
    发明授权
    Determination of stack difference and correction using stack difference 有权

    公开(公告)号：US10481499B2

    公开(公告)日：2019-11-19

    申请号：US16413985

    申请日：2019-05-16

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

    Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein
    43.
    发明授权
    Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein 有权

    公开(公告)号：US10365565B2

    公开(公告)日：2019-07-30

    申请号：US15435593

    申请日：2017-02-17

    Applicant: ASML Netherlands B.V.

    Inventor： Nitesh Pandey ,  Arie Jeffrey Den Boef ,  Marinus Johannes Maria Van Dam

    IPC: G03B27/72 ,  G03F7/20 ,  G01N21/47 ,  G02B5/22

    Abstract: A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302″, 304″) of both the first radiation and second radiation. The illumination path (IP) in one embodiment includes a matching segmented wavelength-selective filter (13, 300), oriented such that a zero order ray passing through the illumination optical system and the collection optical system will be blocked by one of said filters or the other, depending on its wavelength.

    Metrology method and apparatus, computer program and lithographic system
    45.
    发明授权
    Metrology method and apparatus, computer program and lithographic system 有权

    公开(公告)号：US10261427B2

    公开(公告)日：2019-04-16

    申请号：US15869661

    申请日：2018-01-12

    Applicant: ASML Netherlands B.V.

    Inventor： Si-Han Zeng ,  Yue-Lin Peng ,  Jen-Yu Fang ,  Arie Jeffrey Den Boef ,  Alexander Straaijer ,  Ching-Yi Hung ,  Patrick Warnaar

    IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method
    46.
    发明授权
    Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method 有权

    公开(公告)号：US10180628B2

    公开(公告)日：2019-01-15

    申请号：US14892176

    申请日：2014-05-23

    Applicant: ASML Netherlands B.V.

    Inventor： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Maurits Van Der Schaar ,  Te-Chih Huang

    IPC: G03F7/20

    Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

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