MESOPOROUS SILICA FILM FROM A SOLUTION CONTAINING A SURFACTANT AND METHODS OF MAKING SAME
    42.
    发明授权
    MESOPOROUS SILICA FILM FROM A SOLUTION CONTAINING A SURFACTANT AND METHODS OF MAKING SAME 有权
    介孔二氧化硅薄膜的表面活性剂的基础上包含用于解AND METHOD ITS

    公开(公告)号:EP1144310B1

    公开(公告)日:2007-05-30

    申请号:EP99967535.8

    申请日:1999-12-23

    CPC classification number: C01B37/02 H01L21/31695

    Abstract: The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant. The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.

    ALL-VANADIUM SULFATE ACID REDOX FLOW BATTERY SYSTEM
    48.
    发明公开
    ALL-VANADIUM SULFATE ACID REDOX FLOW BATTERY SYSTEM 审中-公开
    全钒酸盐氧化还原液流电池系统

    公开(公告)号:EP3204976A1

    公开(公告)日:2017-08-16

    申请号:EP15849294.2

    申请日:2015-10-05

    CPC classification number: H01M8/20 H01M8/188 Y02E60/528

    Abstract: All-vanadium sulfate redox flow battery systems have a catholyte and an anolyte comprising an aqueous supporting solution including chloride ions and phosphate ions. The aqueous supporting solution stabilizes and increases the solubility of vanadium species in the electrolyte, allowing an increased vanadium concentration over a desired operating temperature range. According to one example, the chloride ions are provided by MgCl2, and the phosphate ions are provided by (NH4)2HPO4.

    Abstract translation: 全硫酸钒氧化还原液流电池系统具有包含含氯离子和磷酸根离子的含水载体溶液的阴极电解液和阳极电解液。 含水载体溶液稳定并增加了钒物质在电解质中的溶解度,允许在期望的操作温度范围内增加钒浓度。 根据一个例子,氯离子由MgCl 2提供,磷酸根离子由(NH 4)2 HPO 4提供。

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