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公开(公告)号：CA2153554A1
公开(公告)日：1996-01-13
申请号：CA2153554
申请日：1995-07-10
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , YAMANOBE MASATO , KAWADE HISAAKI , OHNISHI TOSHIKAZU , IWASAKI TATSUYA
Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.
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公开(公告)号：DE69104241D1
公开(公告)日：1994-11-03
申请号：DE69104241
申请日：1991-03-04
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: A semiconductor laser element of which oscillation wavelength is variable at a wide range has a high operative efficiency. It comprises a substrate; a first light emitting layer (11a) provided on said substrate and including a resonance cavity, said first light emitting layer (11a) permitting the ground energy level and at least one high-order energy level; a second light emitting layer (11b) provided on said substrate and including a resonance cavity, said second light emitting layer (11b) permitting at least the ground energy level, the band gap of the ground energy level of said second light emitting layer (11b) being wider than that of the ground energy level of said first light emitting layer (11a), and one of the band gaps of the high-order energy levels of the first light emitting layer (11a) being substantially equal to the band gap of the ground energy level of the second light emitting layer (11b); a barrier layer (12) disposed between said first light emitting layer (11a) and said second light emitting layer (11b), said barrier layer (12) having its band gap wider than those of said first and second light emitting layers; a pair of clad layers (13,15) sandwiching therebetween said barrier layer (12) and said first and second light emitting layers (11a,11b), said clad layers (13,15) having lower refractive index than those of said first and second light emitting layers (11a,11b); and electrode means for injecting carrier into said first and second light emitting layers. Also disclosed is a driving method for the semiconductor laser element.
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公开(公告)号：GB2192095A
公开(公告)日：1987-12-31
申请号：GB8711344
申请日：1987-05-14
Applicant: CANON KK
Inventor： MIYAZAWA SEIICHI , HARA TOSHITAMI , NOJIRI HIDETOSHI , SEKIGUCHI YOSHINOBU , HASEGAWA MITSUTOSHI , IKEDA SOTOMITSU
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公开(公告)号：JP2000251806A
公开(公告)日：2000-09-14
申请号：JP5379299
申请日：1999-03-02
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , MITSUTAKE HIDEAKI
Abstract: PROBLEM TO BE SOLVED: To provide an image forming device which has high luminance and high definition by improving a structure of a support member. SOLUTION: An image forming device having a plurality of support member 1020 that are disposed between a cathode substrate 1101 and an anode substrate 1017 is structured, such that the supporting member 1020 that is of a columnar configuration and is provided at a non-irradiated portion with a first electron beam emitted from an electron emission element 1012, a plurality of the electron emission elements 1012 are arranged in a matrix form with spaces Px, Py in the row direction and in the column direction, all voltage supplying directions are parallel to the line direction, a relation of Sx=Kx×2d√(Vf/Va) is satisfied when beam diameters of emitted electrons in the line direction and the row direction on the anode substrate 1017 are Sx, Sy, and an electron emission part and the remote end of a phosphor from the electron emission part are shifted by a gap of Sx.
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公开(公告)号：JP2000021289A
公开(公告)日：2000-01-21
申请号：JP18797798
申请日：1998-07-03
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , OKAMURA YOSHIMASA
Abstract: PROBLEM TO BE SOLVED: To stabilize electron emission and to prolong a service life by arranging a high resistant film area, which is a conductive film aggregated area formed by heating a conductive film, of conductive film origin in at least a part of the conductive film. SOLUTION: A conductive film 4 having a desired shape is formed by patterning a conductive film formed on a substrate 1. Then, a heating process forming a high resistance area 6 in the conductive film 4 is carried out after an activation process. According to a material of the conductive film 4, this heating process is carried out in a vacuum, in a hydrogenous atmosphere, in a reducing atmosphere, in an oxidizing atmosphere, in a nitriding atmosphere, or in a carbonizing atmosphere. In this way, cohesive processing is applied to the conductive film 4 in a vacuum or hydrogenous atmosphere for increasing its resistance. Oxidation of the conductive film 4 is carried out by heating in an oxidizing atmosphere, and resistance is increased by two orders of magnitude or more. In this way, a high resistance area 6 arranged in series with an electron emission part 5 is formed so that fluctuation in element current is reduced, and consequently, emission current can be stabilized.
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Patent Agency Ranking
公开(公告)号：JPH0831310A
公开(公告)日：1996-02-02
申请号：JP16008794
申请日：1994-07-12
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To enhance the electron emitting efficiency and emission amount of an electron emitting element, which has a conductive film including an electron emission part between two opposing electrodes, by inserting a specific process in the manufacture of the element. CONSTITUTION:An electron emitting element has a conductive film 4 including an electron emission part 3 between two opposing electrodes 5, 6. At the manufacture of the element, voltage pulses to meet the condition T>10 /P, where T in sec is the pause duration of the impressed voltage pulses and P in torr is partial pressure of carbonic compound, are impressed on the conductive film 4 in an atmosphere with carbonic compound (for example, after a current feed forming process, in the atmosphere at the time of activation due to oil back from an evacuation system of a vacuum rotary pump). Preferably, the voltage pulses to be impressed should have a wave height over the voltage control type negative resistance characteristic region.
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公开(公告)号：JPH0695020A
公开(公告)日：1994-04-08
申请号：JP27235092
申请日：1992-09-16
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To obtain an optical scanning device having a light source by which printing speed is made higher and which emits the light of plural wavelengths for gradation display. CONSTITUTION:A luminous flux from a light source means (wavelength variable semiconductor laser) 21 is condensed on a body to be irradiated (photosensitive drum) 26 through lens systems 22, 24 and 25 so as to perform optical scanning. The light source means 21 can emit the luminous fluxes of plural wavelengths, and the lens system includes a wavelength dispersion element 24 or an element having axial chromatic aberration. The luminous fluxes emitted from the means 21 and including different wavelengths are condensed on the body to be irradiated 26 so that the direction of wavelength dispersion may be at a certain angle with an optical scanning direction or the area of the beam waste surface of the luminous flux on the body 26 is changed to perform area gradation display.
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公开(公告)号：JPH05136528A
公开(公告)日：1993-06-01
申请号：JP32374991
申请日：1991-11-12
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To obtain a semiconductor laser, having a low threshold current value, high efficiency, thermal stability and variable wavelength over a wide band, and the driving method for the semiconductor laser. CONSTITUTION:The optical waveguide structure, containing the following light- emitting layers, barier layer and confinement layers, is provided: they are a plurality of AlGaAs light-emitting layers 5 and 7 having different band gaps of base level, a barrier layer 6 having the band gap larger than the light- emitting layer provided between light-emitting layers 5 and 7, and photo/electron confinement layers 4 and 8. Clad layers 3 and 9, which are laminated sandwiching the above-mentioned structure, are provided. The whole or a part of the barrier layer 6 and the photo-electron confinement layers 4 and 8 are constituted by In0.5 (Ay Gal-y)0.5 P (y >= 0). Among a plurality of light-emitting layers 5 and 7, the light-emitting layer 7, which has the band gap larger than the layer 5, is arranged closer to the clad layer 9, and as a result, electrons can be injected uniformly and easily by injecting holes into the light-emitting layers 5 and 7 in a non-uniform state.
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公开(公告)号：JPH04177784A
公开(公告)日：1992-06-24
申请号：JP30440790
申请日：1990-11-11
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , NITTA ATSUSHI , SHIMIZU AKIRA
Abstract: PURPOSE:To prevent the change of output position from a laser when wavelength is changed, by arranging light emitting layers of different wavelengths in a single optical waveguide. CONSTITUTION:A light emitting layer 11b of short wavelength lambda2 is formed on an n-type clad layer 3 side. A light emitting layer 11a of long wavelength lambda1 is formed on a p-type clad layer 5 side. As a result, positive holes injected from the clad layer 5 side reach the light emitting layer 11b of short wavelength lambda2, but that is difficult as compared with the case of travelling in the opposite direction. Hence a barrier layer 12 is doped to be a high concentration p-type, thereby previously supplying sufficient positive holes. In the case where sufficient positive holes are previously supplied, the positive holes suitably distribute in both of the light emitting layers 11a, 11b, when a current is not made to flow. Thereby the output position from a laser can be prevented from changing, when the wavelength is changed.
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公开(公告)号：JPH02260483A
公开(公告)日：1990-10-23
申请号：JP7817789
申请日：1989-03-31
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: PURPOSE:To perform multi-wavelength light oscillations having uniform characteristics by forming an active layer of a plurality of quantum well layers having different energy gaps, and setting the well width of a high energy gap larger than that of a low energy gap. CONSTITUTION:The thickness of a quantum well layer 1 having larger energy gap of an active layer is set to the thickness or more of a quantum well layer 2 having smaller energy gap of the active layer. In this case, the oscillation threshold current density of the layer 2 is effectively reduced, and the irregularity in the oscillation threshold values of the layers 1, 2 can be reduced. Thus, a plurality of laser lights having optical characteristics of less irregularity, excellent stability and different wavelengths can be emitted.
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