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    2.
    发明专利
    未知

    公开(公告)号：DE69330845T2

    公开(公告)日：2002-04-04

    申请号：DE69330845

    申请日：1993-03-25

    Applicant: CANON KK

    Inventor： MIYAZAWA SEIICHI ,  MIZUTANI NATSUHIKO

    IPC: H01L21/20 ,  H01L21/324 ,  H01L33/00 ,  H01S5/02 ,  H01S5/34 ,  H01S5/343 ,  H01L21/335 ,  H01L21/203

    Abstract: In a method for producing a compound semiconductor device such as laser diodes, FET and HEMT, compound semiconductor is grown at a substrate temperature not greater than 500 DEG C to form a semiconductor layer on a substrate of the semiconductor device. Then, an appropriate treatment, such as heat-treatment in reducing atmosphere, current flow treatment and hydrogen plasma treatment, is conducted to reduce crystal defects in the semiconductor layer attributable to the crystal growth at the low substrate temperature not greater than 500 DEG C.

    6.
    发明专利
    未知

    公开(公告)号：DE69323127T2

    公开(公告)日：1999-07-22

    申请号：DE69323127

    申请日：1993-08-09

    Applicant: CANON KK

    Inventor： MIYAZAWA SEIICHI ,  OHTSUKA MITSURU ,  MIZUTANI NATSUHIKO

    IPC: H01L29/12 ,  H01L29/775 ,  H01L33/16 ,  H01S5/02 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S5/187 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19 ,  H01L33/00

    Abstract: A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5 DEG to 15 DEG with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure. An embodiment of the semiconductor device is a distributed feedback diode laser incorporating a quantum-well or quantum-wire structure.

    7.
    发明专利
    未知

    公开(公告)号：DE69323127D1

    公开(公告)日：1999-03-04

    申请号：DE69323127

    申请日：1993-08-09

    Applicant: CANON KK

    Inventor： MIYAZAWA SEIICHI ,  OHTSUKA MITSURU ,  MIZUTANI NATSUHIKO

    IPC: H01L29/12 ,  H01L29/775 ,  H01L33/16 ,  H01S5/02 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S5/187 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19 ,  H01L33/00

    Abstract: A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5 DEG to 15 DEG with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure. An embodiment of the semiconductor device is a distributed feedback diode laser incorporating a quantum-well or quantum-wire structure.

    8.
    发明专利
    未知

    公开(公告)号：DE3716191A1

    公开(公告)日：1987-11-19

    申请号：DE3716191

    申请日：1987-05-14

    Applicant: CANON KK

    Inventor： MIYAZAWA SEIICHI ,  HARA TOSHITAMI ,  NOJIRI HIDETOSHI ,  SEKIGUCHI YOSHINOBU ,  HASEGAWA MITSUTOSHI ,  IKEDA SOTOMITSU

    IPC: G11B7/125 ,  G11B7/14 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19 ,  H01S3/02 ,  H01S3/08

    Abstract: A semiconductor laser array 21 is disclosed, comprising plural semiconductor laser elements each emitting light from two end faces (26,27) constituting resonant planes and monolithically formed on a semiconductor substrate, in which the mutual angle of the beams emerging from one end face of semiconductor lasers is different from that from the other end face and in which said beam angle is selected as a non-zero finite value at least at one end. This may be achieved where the current injection area of each laser element is limited to a stripe-shaped area 24,25 by making stripe-shaped areas of curved or bent form.

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