公开(公告)号：JPH09245708A

公开(公告)日：1997-09-19

申请号：JP4587896

申请日：1996-03-04

Applicant: CANON KK

Inventor： MURAKI MASATO ,  GOTO SUSUMU

IPC: G03F7/20 ,  H01J37/21 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To form a desired exposure pattern with higher throughput by providing a correction electron optical system to be generated when an intermediate image is contraction-projected on an exposed face by means of a contraction electron optical system. SOLUTION: A sequence controller sends an exposure control file stored in a memory 19 to a deflection control circuit 21. In the deflection control circuit 21, based on position data in the exposure control file that was transmitted, a deflection control signal, a focus control signal, and non-point correction signal are transmitted to a deflector 6, a dynamic focus coil 7, and a dynamic sting coil 8 synchronized with a blanking control circuit 16 respectively, and the position of plural light source images is controlled on a wafer.

公开(公告)号：JPH08124849A

公开(公告)日：1996-05-17

申请号：JP26542095

申请日：1995-10-13

Applicant: CANON KK

Inventor： MURAKI MASATO ,  SUZUKI AKIYOSHI

IPC: G01B11/00 ,  G01C3/06 ,  G02B7/28 ,  G03F7/207 ,  H01L21/027

Abstract: PURPOSE: To make the image plane of a projection optical system exactly coincident with the surface of a wafer by a method wherein the focal point of the projection optical system is detected by an automatic focusing system, and the surface of the substrate is positioned at the position of an image plane on the basis of the detected focal point. CONSTITUTION: In an automatic focal point detection optical system, an illuminating system is made to illuminate a focusing mark 30 on a reticule 1 and its vicinity with light which is of the same wavelength with exposure light and extracted from a light exposure illuminating system 7 through a light guiding fiber 13. A reflected light returning from a reference plane mirror 6 through the intermediary of the reticule 1 is detected in volume by a photodetection 22 of a photodetective system. The focal point of a projection lens detected by the output signal of the photodetector 22 is made to serve as the reference point of an off-axis automatic focus detection system. The printing optimal position of a wafer is determined on the basis of the above reference point taking offsets such as the thickness of a coating on the wafer, a level difference and the like into consideration. By this setup, the image plane of a projection optical system is made exactly coincident with the plane of a wafer.

公开(公告)号：JPH08115876A

公开(公告)日：1996-05-07

申请号：JP26542295

申请日：1995-10-13

Applicant: CANON KK

Inventor： MURAKI MASATO ,  SUZUKI AKIYOSHI

IPC: G01B11/00 ,  G02B7/28 ,  G03B13/36 ,  G03F9/00 ,  H01L21/027

Abstract: PURPOSE: To detect the focus position of a projection optical system at a high accuracy by determining the image plane position at a second point on the basis of the image plane position at a first point and image plane curve data of a projection optical system and controlling an adjusting means on the basis of the image plane position and signals from a wafer position detecting means. CONSTITUTION: An off-axis plane position detector 10 detects the plane positions at several points (exposed areas or shots) on a wafer 5. Based on data about these plane positions, the position and tilt of the wafer 5 in the optical axis direction are corrected. At this time an XYZ stage 4 is driven to position the surface of the wafer 5 at an optimum image plane position of a projection lens 3. Thus, the focus position of the secularly changing projection optical system can be detected at a high accuracy and focusing can be made at a high accuracy.

公开(公告)号：JPH06181163A

公开(公告)日：1994-06-28

申请号：JP33310592

申请日：1992-12-14

Applicant: CANON KK

Inventor： TAKAHASHI KAZUHIRO ,  MURAKI MASATO

IPC: G02B17/08 ,  G02B27/28 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03B27/32

Abstract: PURPOSE:To attain resolving power not dependent on the directivity of fine pattern. CONSTITUTION:In a reflective/refractive optical system for focusing a fine pattern on a reticle 1 onto a wafer 9 comprising a polarization beam splitter 3, a concave mirror 6, a lens group 2, 4, 8, and a quarter wavelength plate 4, a quarter wavelength plate 7 for converting S-polarized light into circularly polarized light is disposed between the polarization beam splitter and the wafer.

公开(公告)号：JPH06151279A

公开(公告)日：1994-05-31

申请号：JP32282092

申请日：1992-11-06

Applicant: CANON KK

Inventor： MURAKI MASATO ,  IMAI SHUNZO

IPC: G03B27/54 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01S3/101

Abstract: PURPOSE:To provide an illuminating device suitable for illuminating an alignment reference mark and a reticle and a projection exposure device equipped therewith. CONSTITUTION:Coherent light projected from a light source 1 is split into light fluxes incoherent to each other, the incoherent light fluxes are made to impinge on an exposure optical integrator from different directions at an incident angle of alpha deg. to overlap each other, and an irradiation plane 10 is illuminated with a light flux projected from the exposure optical integrator. At the same time, incoherent light rays are made to impinge on aligning optical integrators 6 and 7 from different directions at an incident angle of beta deg. to overlap each other, and the irradiation plane 10 is partially illuminated with a light flux projected from the exposure optical integrator through optical guides 8 and 9.

公开(公告)号：JPH0521332B2

公开(公告)日：1993-03-24

申请号：JP2945885

申请日：1985-02-19

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JPH0547639A

公开(公告)日：1993-02-26

申请号：JP22522191

申请日：1991-08-09

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To make a high-resolution exposure by a projection optical system by changing the angular magnification of an afocal system installed between a radiation source and a coherent optical system, by changing a cross section of each of the plurality of beams to be cast on an integrator, by adjusting the distribution of the intensity of a secondary light source, and by selecting an illumination system most suitable for a pattern shape. CONSTITUTION:The beam of a radiation source 11 illuminates and exposes a reticle R and a wafer W. An incoherent optical system 20 amplitude-divides a single beam of the radiation source 11 into the plurality of beams, giving them a difference in the optical path length of a coherent distance or above. An integrator 22, receiving the plurality of beams, forms a secondary light source. A condensing optical system 23 turns a secondary beam from the secondary light source toward a surface to be illuminated. An optical system 20 works so that the incident positions of the plurality of beams may be symmetrical about an optical axis of the integrator 22. An afocal system 2 changes the angle magnification between the radiation source 11 and the optical system 20, changes a cross section of each of the beams to be cast on the integrator 22 and adjusts the distribution of intensity of the secondary light source.

公开(公告)号：JPH04307722A

公开(公告)日：1992-10-29

申请号：JP9952391

申请日：1991-04-04

Applicant: CANON KK

Inventor： SATO MAKOTO ,  MURAKI MASATO

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To obtain a position-detection method and a position-detection apparatus which use a grid-shaped mark which can detect relative positions of both a reference mark and a grid-shaped mark on the face of a wafer with high accuracy from the same mark image even when the reference mark and the grid-shaped mark on the face of the wafer are dislocated relatively by 1/2 or more of the fundamental cycle of a mark image. CONSTITUTION:A grid-shaped mark GW at a definite pitch is illuminated by using a light flux from a light-source means 2. By using a diffracted beam of light of a prescribed order out of reflected and diffracted beams of light from said grid-shaped mark GW, the image of said grid-shaped mark is formed on a prescribed face where the image of a reference mark GS has been formed. The spatial distribution of the contrast of the image of said grid-shaped mark is detected by using a contrast operation circuit 106; a specific mark in said grid-shaped mark is found; the position of said reference mark and that of the grid-shaped mark are detected by means of a position detection circuit 107 by utilizing said specific mark.

公开(公告)号：JPH0425830A

公开(公告)日：1992-01-29

申请号：JP13020490

申请日：1990-05-22

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G03B27/32 ,  G03B27/72 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01S3/131 ,  H01S3/225

Abstract: PURPOSE:To perform corrected exposure at a high speed by dividing the exposure to two stages, rough exposure and corrected exposure, and executing the corrected exposure with light whose energy is adjusted according to a difference between accumulated exposure up to the present and appropriate exposure. CONSTITUTION:This device is provided with a monitoring device 8 for monitoring the energy of the light for exposing which is intermittently projected and a rotatable interference filter 11 which is a light quantity variable device 2 being a means for adjusting the energy of the light for exposing. The accumulated value of the energy outputted from the device 8 is compared with a desired exposure energy value so as to calculate the corrected energy quantity required for attaining the desired exposure energy value. In the case that the calculated result is smaller than the predicted maximum energy of one pulse, the energy quantity of one pulse is adjusted by the adjusting means to perform the corrected exposure. The corrected energy quantity is calculated again and the corrected exposure is repeated until the corrected energy quantity attains target accuracy.

公开(公告)号：JPH02206706A

公开(公告)日：1990-08-16

申请号：JP2814489

申请日：1989-02-07

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To execute the alignment of a reticle and a wafer with high accuracy by illuminating a wafer mark provided like a gride at a prescribed pitch on the wafer surface by a prescribed luminous flux, and also, using a reflected luminous flux from the wafer mark. CONSTITUTION:An electronic circuit pattern on the reticle R surface illuminated by an exposure light from an illuminating device IL is reduced and projected onto the wafer W surface placed on a wafer stage ST by a projection lens 1 and exposed and transferred. As for the alignment in this case, the light quantity of a light beam going to a mirror 21 is controlled by allowing a luminous flux from the He-Ne laser 2 of a linearly polarized light to be made incident on an acoustooptical element 26, the light beam is interrupted completely in some state, reflected by the mirror 21 and made incident on an F-theta lens 22, reflected by a polarized light beam splitter 5 and by a lambda/4 plate 6, a lens 7, a mirror 8 and the projection lens 1, the wafer W surface is irradiated with a wafer mark GW. By using a + or - primary diffracted light in a reflected diffracted light from the mark GW, the image of a mark GS is formed on the prescribed surface on which a reference mark GS is formed, and by utilizing the image of this mark GS, the position of an object is derived.