PLATING APPARATUS
    41.
    发明申请
    PLATING APPARATUS 审中-公开

    公开(公告)号:US20190338438A1

    公开(公告)日:2019-11-07

    申请号:US16393381

    申请日:2019-04-24

    Abstract: A plating apparatus that reduces a terminal effect is provided. The plating apparatus is provided. The plating apparatus includes a substrate holder for holding a substrate as a plating object, an electric contact disposed on the substrate holder to apply a current to a substrate, and a plurality of anodes arranged to face the substrate holder. Each of the plurality of anodes has a long and thin shape. Each of the plurality of anodes is arranged such that a longitudinal direction of the anode is parallel to a surface of a substrate held onto the substrate holder and such that at least one end in the longitudinal direction of each of the anodes faces the electric contact of the substrate holder.

    PLATING APPARATUS, PLATING METHOD, AND RECORDING MEDIUM

    公开(公告)号:US20190309436A1

    公开(公告)日:2019-10-10

    申请号:US16307908

    申请日:2017-04-14

    Abstract: There are provided a plating apparatus and a plating method that allow determining an appropriate replacement timing of a diaphragm. The plating apparatus includes an anode bath, a cathode bath, a diaphragm, an analyzer, and a control device. The anode bath holds a plating solution and an insoluble anode. The cathode bath holds a plating solution containing an additive and a substrate. The diaphragm separates the plating solution held in the anode bath from the plating solution held in the cathode bath. The analyzer is configured to analyze a concentration of the additive in the plating solution in the cathode bath at every predetermined time interval. The control device is configured to calculate an actual consumption of the additive during the predetermined period based on the concentration of the additive analyzed at the every predetermined time interval. The control device includes a memory that stores an expected consumption of the additive during the predetermined period. The control device is configured to determine whether a difference between the actual consumption and the expected consumption is equal to or more than a predetermined value or not.

    PLATING METHOD
    43.
    发明申请
    PLATING METHOD 审中-公开

    公开(公告)号:US20180282895A1

    公开(公告)日:2018-10-04

    申请号:US15934620

    申请日:2018-03-23

    Abstract: There is provided a method of supplying an indium ion to a plating solution for electrolytic plating using an insoluble anode. The method includes a step of preparing an acidic plating solution and a step of immersing indium metal in the plating solution and dissolving the indium metal in the plating solution without voltage application to the indium metal.

    PLATING METHOD AND PLATING APPARATUS
    45.
    发明申请

    公开(公告)号:US20180266009A1

    公开(公告)日:2018-09-20

    申请号:US15915939

    申请日:2018-03-08

    Abstract: A plating method capable of saving a substrate in an event of a failure of a transporter, a plating tank, or other component when the substrate is being plated is disclosed. The plating method includes: transporting a plurality of substrates to a plurality of plating tanks, respectively, with a transporter; immersing the plurality of substrates in a plating solution held in the plurality of plating tanks to plate the plurality of substrates; detecting a failure that has occurred in the transporter or a post-processing tank; and replacing the plating solution in the plurality of plating tanks with a preservative liquid to thereby immerse the plurality of substrates in the preservative liquid.

    Sn ALLOY PLATING APPARATUS AND Sn ALLOY PLATING METHOD
    47.
    发明申请
    Sn ALLOY PLATING APPARATUS AND Sn ALLOY PLATING METHOD 有权
    Sn合金镀层装置和Sn合金镀层方法

    公开(公告)号:US20140332393A1

    公开(公告)日:2014-11-13

    申请号:US14267874

    申请日:2014-05-01

    CPC classification number: C25D21/18 C25D3/60 C25D17/002 C25D17/10

    Abstract: An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

    Abstract translation: 公开了一种Sn合金镀覆装置。 该装置包括:电镀槽,其中存储Sn合金电镀液中的不溶性阳极和浸在Sn合金电镀液中的基板,其中具有阴离子交换膜的Sn溶解,其中隔离阳极室,其中Sn阳极 并且设置有阴极的阴极室,构成为向阳极室和阴极室供给纯水的纯水供给结构,构成为供给甲烷磺酸的甲磺酸溶液供给结构体 含有甲磺酸的溶液,阳极室和阴极室,以及Sn补充液供给结构,其构造成将在阳极室中产生的含有Sn离子和甲磺酸的Sn补充剂供给到镀浴中。

    ELECTROPLATING METHOD AND ELECTROPLATING APPARATUS FOR THROUGH-HOLE
    48.
    发明申请
    ELECTROPLATING METHOD AND ELECTROPLATING APPARATUS FOR THROUGH-HOLE 有权
    电镀方法和电镀设备

    公开(公告)号:US20140042032A1

    公开(公告)日:2014-02-13

    申请号:US13959811

    申请日:2013-08-06

    Abstract: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

    Abstract translation: 提供了一种用于通孔的电镀方法。 该方法包括:第一电镀工艺,第二电镀工艺和第三镀覆工艺。 第一电镀工艺是在通孔中形成均匀厚度的金属膜以减小通孔的直径的电镀工艺,第二电镀工艺是封闭通孔的中心部分的电镀工艺, 使用PR脉冲电流与金属膜形成孔,并且第三电镀工艺是使用等于或大于其的正向电流值的电镀电流,用金属膜完全填充通孔的电镀工艺 PR脉冲电流用于第二电镀工艺。

    PLATING APPARATUS AND METHOD OF CLEANING SUBSTRATE HOLDER
    49.
    发明申请
    PLATING APPARATUS AND METHOD OF CLEANING SUBSTRATE HOLDER 有权
    涂层装置及清洗基板支架的方法

    公开(公告)号:US20140020720A1

    公开(公告)日:2014-01-23

    申请号:US13943984

    申请日:2013-07-17

    CPC classification number: C25D21/08 B08B3/08 C25D5/12 C25D17/001 C25D17/06

    Abstract: A plating apparatus includes: a plating bath configured to store a plating solution therein; a substrate transport device configured to remove a substrate before plating from a substrate cassette and return the substrate after plating to the substrate cassette; a substrate holder configured to detachably hold the substrate with a sealing member sealing a peripheral portion of the substrate and immerse the substrate in the plating solution in the plating bath; a dummy substrate arranged in a position accessible by the substrate transport device; and a substrate holder cleaning bath configured to immerse the substrate holder in a cleaning liquid to clean the substrate holder when holding the dummy substrate with the sealing member sealing a peripheral portion of the dummy substrate.

    Abstract translation: 电镀装置包括:电镀液,其被配置为在其中存储电镀液; 基板输送装置,其被配置为在从基板盒进行电镀之前去除基板,并且在电镀之后将所述基板返回到所述基板盒; 衬底保持器,其被构造成用封闭所述衬底的周边部分的密封构件可拆卸地保持所述衬底,并将所述衬底浸入所述电镀液中的所述电镀溶液中; 布置在由所述基板输送装置可接近的位置的虚设基板; 以及衬底保持器清洗槽,其被配置为当用密封构件密封虚设衬底的周边部分来保持虚设衬底时,将衬底保持器浸入清洁液中以清洁衬底保持器。

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