公开(公告)号：US20200335394A1

公开(公告)日：2020-10-22

申请号：US16090059

申请日：2017-03-29

Applicant: EBARA CORPORATION

Inventor： Keiichi KURASHINA ,  Taiki ISHITSUKA ,  Shinji OMATA ,  Mitsuhiro SHAMOTO ,  Makoto KUBOTA

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/00

Abstract: To prevent a tin alloy from coming into contact with a copper wiring layer when a tin alloy bump layer is reflowed. According to an aspect of the present invention, a method of manufacturing a substrate having a bump at a resist opening is provided. The method of manufacturing a substrate includes a step of forming a copper wiring layer on the substrate by plating at a first temperature, a step of forming a barrier layer on the copper wiring layer by plating at a second temperature that is approximately equal to the first temperature, and a step of forming a tin alloy bump layer on the barrier layer by plating.

公开(公告)号：US20190153610A1

公开(公告)日：2019-05-23

申请号：US16196985

申请日：2018-11-20

Applicant: EBARA CORPORATION

Inventor： Mitsuhiro SHAMOTO ,  Mizuki NAGAI ,  Naoto TAKAHASHI

IPC: C25D17/00 ,  H01L21/288

Abstract: To optimize a location of a power feeding point with the use of a square substrate. There is disclosed a method for determining a location of a power feeding point in an electroplating apparatus. The electroplating apparatus is configured to plate a rectangular substrate having a substrate area of S. The rectangular substrate has opposed two sides coupled to a power supply. The rectangular substrate has a length L of the sides coupled to the power supply and a length W of sides not coupled to the power supply meeting a condition of 0.8×L≤W≤L. The method includes determining a number N of the power feeding points according to the substrate area S.

公开(公告)号：US20240109026A1

公开(公告)日：2024-04-04

申请号：US18476588

申请日：2023-09-28

Applicant: EBARA CORPORATION

Inventor： Mitsuhiro SHAMOTO ,  Takashi KYOTANI

IPC: B01D53/32

CPC classification number: B01D53/32 ,  B01D53/326 ,  B01D2257/2066 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2258/0216 ,  B01D2259/806 ,  B01D2259/818

Abstract: An exhaust-gas treatment apparatus capable of efficiently making a harmful gas containing in an exhaust gas harmless without increasing a size of the apparatus is disclosed. The exhaust-gas treatment apparatus includes a main body in which a flow passage is formed for a liquid to flow, an exhaust-gas supply line to be coupled to the main body, and for supplying the exhaust gas to the flow passage through which the liquid flows, a suction device configured to suck the exhaust gas from the exhaust-gas supply line into the flow passage, a low-temperature plasma generator for generating low-temperature plasma in the flow passage to decompose the harmful gas, and a discharge line for discharging the exhaust gas, which has passed through the low-temperature plasma generator, from the main body.

公开(公告)号：US20190137445A1

公开(公告)日：2019-05-09

申请号：US16180801

申请日：2018-11-05

Applicant: EBARA CORPORATION

Inventor： Mitsuhiro SHAMOTO ,  Masashi SHIMOYAMA

IPC: G01N27/42 ,  C25D21/12

Abstract: An object of the present invention is to provide a numerical analysis method, by which film-thickness distribution of an electroplated film can be obtained.A method for analyzing plating comprising steps for: performing electrochemical measurement in an electroplating apparatus; deriving electrochemical parameters from result of the electrochemical measurement; specifying plating conditions which are applied when performing a plating process; based on the electrochemical parameters and the plating conditions, determining current density distribution on a surface of a substrate which is an object of the plating process, wherein the current density distribution is represented by a predetermined function formula which comprises a variable which represents a position on the substrate; and based on the current density distribution, calculating thickness of a film plated on the substrate.

公开(公告)号：US20190338438A1

公开(公告)日：2019-11-07

申请号：US16393381

申请日：2019-04-24

Applicant: EBARA CORPORATION

Inventor： Mitsuhiro SHAMOTO ,  Masashi SHIMOYAMA

IPC: C25D17/00 ,  C25D17/02 ,  C25D17/06

Abstract: A plating apparatus that reduces a terminal effect is provided. The plating apparatus is provided. The plating apparatus includes a substrate holder for holding a substrate as a plating object, an electric contact disposed on the substrate holder to apply a current to a substrate, and a plurality of anodes arranged to face the substrate holder. Each of the plurality of anodes has a long and thin shape. Each of the plurality of anodes is arranged such that a longitudinal direction of the anode is parallel to a surface of a substrate held onto the substrate holder and such that at least one end in the longitudinal direction of each of the anodes faces the electric contact of the substrate holder.

公开(公告)号：US20190271095A1

公开(公告)日：2019-09-05

申请号：US16254232

申请日：2019-01-22

Applicant: EBARA CORPORATION

Inventor： Risa KIMURA ,  Mitsuhiro SHAMOTO

IPC: C25D21/10 ,  C25D17/00 ,  C25D21/12 ,  B01F11/00

Abstract: According to one embodiment, a plating apparatus for electroplating a substrate including a non-pattern area is provided. The plating apparatus includes a plating tank for holding the plating solution, an anode configured to be connected to a positive electrode of a power supply, and a paddle configured to move in the plating tank to stir the plating solution held in the plating tank. The paddle is configured such that at least a part of the non-pattern area of the substrate is constantly blocked when the paddle is viewed from the anode while the paddle is stirring the plating solution.

公开(公告)号：US20180274116A1

公开(公告)日：2018-09-27

申请号：US15925490

申请日：2018-03-19

Applicant: EBARA CORPORATION

Inventor： Mitsuhiro SHAMOTO ,  Masashi SHIMOYAMA

IPC: C25D3/38 ,  C25D5/18 ,  C25D17/00 ,  C25D17/12 ,  C25D7/12 ,  H05K3/24 ,  H01L21/288 ,  H01L21/768 ,  C25D21/10 ,  C25D21/08

CPC classification number: C25D3/38 ,  C25D5/18 ,  C25D7/00 ,  C25D7/123 ,  C25D17/001 ,  C25D17/005 ,  C25D17/008 ,  C25D17/06 ,  C25D17/12 ,  C25D21/08 ,  C25D21/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H05K3/187 ,  H05K3/241 ,  H05K2203/1518

Abstract: There is provided a plating apparatus for plating a rectangular substrate using a substrate holder holding the rectangular substrate. The plating apparatus comprises a plating bath configured to store the substrate holder holding the rectangular substrate, and an anode disposed inside the plating bath so as to face the substrate holder. The substrate holder includes an electrical contact configured to feed two opposite sides of the rectangular substrate. The rectangular substrate and the anode are placed inside the plating bath so as to satisfy the relationship of 0.59×L1−43.5 mm≤D1≤0.58×L1−19.8 mm, where L1 is the shortest distance between a substrate center of the rectangular substrate and the electrical contact, and D1 is the distance between the rectangular substrate and the anode.