41.
    发明专利
    未知

    公开(公告)号:FR2831013B1

    公开(公告)日:2005-03-25

    申请号:FR0212567

    申请日:2002-10-10

    Applicant: GEN ELECTRIC

    Abstract: In one aspect of the invention a method for processing a fluoroscopic image is provided. The method includes scanning an object with an imaging system including at least one radiation source and at least one detector array, acquiring a plurality of dark images to generate a baseline image, acquiring a plurality of lag images subsequent to the baseline image, determining a plurality of parameters of a power law using at least one lag image and at least one baseline image, and performing a log-log extrapolation of the power law including the determined parameters.

    43.
    发明专利
    未知

    公开(公告)号:FR2849574A1

    公开(公告)日:2004-07-02

    申请号:FR0314179

    申请日:2003-12-03

    Applicant: GEN ELECTRIC

    Abstract: A technique is provided in which a gain correction map derived for a detector at one X-ray spectrum may be adapted to accommodate images acquired by the detector at a different X-ray spectrum. The technique accounts for the physical variations in the detector which may produce spectrally-sensitive artifacts as well as for the particular image acquisition conditions. A technique is also provided for correcting edge artifacts in an acquired image by measuring median signal intensity within columns or rows of the image and deriving correction factors for the respective edge columns or rows based upon the trends of the median signal intensities. A technique is also provided for storing detector attributes during a manufacturing calibration process and accessing them during system operation such that a suitable gain correction factor is employed based upon the spectrum and operating conditions.

    44.
    发明专利
    未知

    公开(公告)号:DE10247808A1

    公开(公告)日:2003-06-12

    申请号:DE10247808

    申请日:2002-10-14

    Applicant: GEN ELECTRIC

    Abstract: In one aspect of the invention a method for processing a fluoroscopic image is provided. The method includes scanning an object with an imaging system including at least one radiation source and at least one detector array, acquiring a plurality of dark images to generate a baseline image, acquiring a plurality of lag images subsequent to the baseline image, determining a plurality of parameters of a power law using at least one lag image and at least one baseline image, and performing a log-log extrapolation of the power law including the determined parameters.

    Vorrichtungen eines Kollimators
    46.
    发明专利

    公开(公告)号:DE102006023032B4

    公开(公告)日:2015-05-28

    申请号:DE102006023032

    申请日:2006-05-10

    Applicant: GEN ELECTRIC

    Abstract: Vorrichtung (100) zum Einblenden einer elektromagnetischen Projektion, wobei die Vorrichtung aufweist: ein Kollimatorblatt (102) und eine Kante (104), die wenigstens eine physikalische Beschaffenheit zur Veränderung der Fähigkeit zur Absorption elektromagnetischer Energie aufweist, wobei die Kante an dem Kollimatorblatt befestigt ist, wobei die wenigstens eine physikalische Beschaffenheit zur Veränderung der Fähigkeit zur Absorption elektromagnetischer Energie eine sich ändernde Dichte des Materials in der Kante (700) aufweist.

    TRANSISTOR A COUCHES MINCES ET MATRICE DE DIODES POUR UN ECRAN OU ANALOGUE D'UN SYSTEME IMAGEUR.

    公开(公告)号:FR2894071A1

    公开(公告)日:2007-06-01

    申请号:FR0655222

    申请日:2006-11-30

    Applicant: GEN ELECTRIC

    Abstract: Selon une ou plusieurs formes de réalisation, un écran de détection (116) d'un système d'imagerie (100) peut être réalisé à l'aide d'une matrice de photodiodes (226) intégrée avec une matrice de transistors à couches minces. La matrice de transistors à couches minces peut comporter un ou plusieurs trous d'interconnexion (200, 202, 204, 206) formés sur celle-ci pour accroître l'adhérence de la matrice de photodiodes (226) à la matrice de transistors à couches minces. Les trous d'interconnexion (200, 202, 204, 206) peuvent comporter des parois latérales à structure étagée. La matrice de transistors à couches minces peut comporter une première couche de métallisation (214) et une deuxième couche de métallisation (218). Une troisième couche de métallisation (222) peut être ajoutée sur la matrice de transistors à couches minces, troisième couche dans laquelle les diodes (226) de la matrice de photodiodes (226) peuvent toucher la troisième couche de métallisation (222). Les diodes (226) de la matrice de photodiodes (226) peuvent toucher la première couche de métallisation (214) et/ou la deuxième couche de métallisation (218) via la troisième couche de métallisation (222) sans toucher directement la première couche de métallisation (214) ni la deuxième couche de métallisation (218).

    49.
    发明专利
    未知

    公开(公告)号:DE60033913D1

    公开(公告)日:2007-04-26

    申请号:DE60033913

    申请日:2000-10-19

    Applicant: GEN ELECTRIC

    Abstract: A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.

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