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公开(公告)号：JPH03200375A
公开(公告)日：1991-09-02
申请号：JP34413289
申请日：1989-12-27
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , HIROHATA TORU , NAKAJIMA KAZUTOSHI , SUGIMOTO KENICHI , IIDA TAKASHI , SUZUKI TOMOKO
IPC: H01L31/04
Abstract: PURPOSE:To effectively use a light component smaller than an energy gap and to efficiently output power by using a metal-high resistance semiconductor Schottky barrier, and reducing the thickness of the semiconductor to strengthen an inner built-in electric field. CONSTITUTION:Ga and As are simultaneously deposited in vacuum on a tungsten plate 1 to form a high resistance GaAs thin layer 2 with 1-2mum of thickness. An Si is ion implanted to the layer 2 to form an ohmic contact 3, and a contact electrode 4 with it is formed by depositing a NESA material in vacuum. When light is applied from the electrode 4 side, a light having an energy larger than an energy gap (Eg) is absorbed in the layer 2 to form carrier, and the light having the energy smaller than the Eg excites the carrier from Schottky metal. Thus, the thickness of the semiconductor is reduced to provide sufficient size to collect the carrier in a built-in electric field. Thus, a light component smaller than the energy gap can effectively be used to efficiently output power.
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公开(公告)号：JPH0327410A
公开(公告)日：1991-02-05
申请号：JP16191389
申请日：1989-06-23
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
Abstract: PURPOSE:To miniaturize and simplify a circuit and to display a high speed characteristic which light has to a maximum by providing two optical half adders where an optical signal executes input/output, and an optical latch memory. CONSTITUTION:The adder consists of two optical half adders 1 where the optical signal executes input/output, and one optical latch memory 2 which executes delay for one clock. When two binary numbers A and B are sequentially inputted to the optical half adder of a former stage by making up digits, the sum outputs are given to one input of the optical half adder in a post-stage for respective digits, and a carry output C is given to the optical latch memory 2. Data which is temporarily stored in the optical latch memory 2 is added to the sum output of the subsequent digit by the optical half adder 1 in the former-stage by the optical half adder in the post- stage. Consequently, the sum of the binary numbers is obtained as the sum output S of the optical half adder 1 of the post-stage. Then, an operation result can be outputted for one clock by constituting the optical half adders 1 and 1 in such a way that the optical signal executes input/output, and the operation speed of the full addition operation is prevented from being damaged even if they are connected in serial. Thus, the operation speed is improved.
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公开(公告)号：JPH031576A
公开(公告)日：1991-01-08
申请号：JP13500089
申请日：1989-05-29
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
Abstract: PURPOSE:To suppress a waveform distortion upon inputting/outputting of a high-frequency electric signal to a minimum limit by directly coupling a signal pin of an upper part to a central conductor of a lower part, and inputting or outputting a high frequency current or voltage signal to or from a photoelectric transducer associated therewith. CONSTITUTION:An upper part becomes a sealed part containing a chip 8 of a photoelectric transducer, and a lower part becomes a high frequency coaxial connector. The chip 8 is disposed at the center of the upper part, and connected to a signal pin 2 disposed eccentrically via a bonding wire 9. In order to connect the pin 2 to the central conductor of the connector, the pin 2 must be bent on the way to be brought to the center. In this case, when the pin is abruptly bent, high frequency characteristic is lost. Accordingly, it is desirable to obliquely bend it. A circuit for biasing is added to the connector of the lower part, and it is desirable to form the whole in an integral structure including it.
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公开(公告)号：JPH02190019A
公开(公告)日：1990-07-26
申请号：JP1025689
申请日：1989-01-19
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUGA HIROBUMI
Abstract: PURPOSE:To attain input/output of a control signal and an input output signal in terms of light by providing a light receiving element, a light emitting element, a guide line leading an electric signal to the light emitting element and an optical input output section supplying an input optical signal to the light receiving element and leading an output optical signal outputted from the light emitting element. CONSTITUTION:An electric signal sent from a light receiving element 1 is sent to a light emitting element 2, the light emitting element 2 receives the electric signal and outputs an optical signal and the optical signal reaches the element 1 via a light guide path 4. An optical signal is supplied from the light emitting element 101 to the element 1 and a half mirror 5 is provided to lead out the optical signal outputted from the element 2 externally. Thus, an optical input and output section 6 consists of them. With the element 1 supplying an optical signal, a signal is transferred and latched by a closed circuit comprising the guide path 3, the element 2, the light guide path 4 and the element 1, and the optical signal of the element 2 is extracted from the optical input and output section. Thus, the light receiving operation is made corresponding with the logic operation to apply optical input/output and storage.
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公开(公告)号：JPH0271578A
公开(公告)日：1990-03-12
申请号：JP21581788
申请日：1988-08-30
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , IIDA TAKASHI , HIROHATA TORU , SUGIMOTO KENICHI , WARASHINA SADAHISA , NAKAJIMA KAZUTOSHI
Abstract: PURPOSE:To enable the constitution of an oscillator or an amplifier which covers a wide frequency band that inludes a superhigh frequency to a light wave region by a method wherein the frequency of an electromagnetic wave is made to be within the range that a cyclotron frequency is added to or substracted from a medium plasma frequency, and its polarized wave front is contained in a plane which crosses both the input directions of a magnetic field and the electromagnetic wave itself at a right angle. CONSTITUTION:An indium antimonide semiconductor is used as a medium 1 which contains free carriers, and the medium 1 is placed in a magnetic field 2. Electrodes 3 and 4 are provided to both ends of the medium 1 respectively, and a voltage is applied from a power source 7 to the electrodes 3 and 4 to generate a carrier accelerating electric field between them, and the medium 1 is arranged so as to make the carrier accelerating electric field cross the magnetic field 2 at a right angle. Light rays are directed to the medium 1 passing through light through windows provided to the electrodes 3 and 4. At this point, the polarized wave front of light rays is so positioned as to intersect the magnetic field 2 at a right angle. By the irradiation of the medium 2 with light rays, the amplified output light can be obtained from the side opposite to the irradiated side. The amplification factor of about 10dB or more per medium 1cm in length can be expected to the outside.
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Patent Agency Ranking
公开(公告)号：JPH024014A
公开(公告)日：1990-01-09
申请号：JP15206088
申请日：1988-06-20
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUGA HIROBUMI
IPC: H01L27/14 , H01L27/146 , H01L27/148 , H01L27/15 , H03K19/14
Abstract: PURPOSE:To execute a high-speed logical operation by combining two light- receiving elements having electrode structures substantially symmetrical with respect to right and left and composing a basic circuit with three terminals at both terminals and a midpoint. CONSTITUTION:Light-receiving elements 11 and 12 having the electrode structures symmetrical with respect to right and left are connected in series, and optical logical gate circuit 10 with three terminals is composed at both terminals 19 and 20 and a connecting point 21. The light-receiving elements 11 and 12 are irradiated by light input signals X and Y. To a gate circuit 10, as peripheral circuits, a bias blocks 13 and 14, a level shift diode 15, and load resistances 16-18 are connected. To the light-receiving elements 11 and 12, positive and negative bias voltages are supplied from power sources 22 and 23. When the signals X and Y are turned off, the outputs of sum and carry logical output terminals 24 and 25 are made into zero. When only the signal X or Y is on, a +H or -H is outputted to the terminal 24. When the signals X and Y are on, the terminal 24 is made into the output zero, and the terminal 25 outputs an H. Thus, the high-speed logical operation is executed.
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公开(公告)号：JP2012137506A
公开(公告)日：2012-07-19
申请号：JP2012094588
申请日：2012-04-18
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： SUZUKI TOMOHITO , SHIBAYAMA KATSUMI , IIDA TAKASHI
IPC: G01J3/36
Abstract: PROBLEM TO BE SOLVED: To provide a spectroscopic module having high reliability.SOLUTION: A spectroscopic module 1 includes a body portion 2 which makes light L1 and L2 transmit therethrough; a spectroscopic portion 3 which spectroscopically separates the light L1 that has been incident on the body portion 2 from the front surface 2a of the body portion 2 and reflects the spectroscopically separated light to the side of the front surface 2a; a light detection portion 41 which detects the light 2 that has been spectroscopically separated and reflected by the spectroscopic portion 3; and a light detection element 4 which is supported on the front surface 2a of the body portion 2. The light detection element 4 has a light passage hole 42 through which the light L1 traveling to the spectroscopic portion 3 passes. A light absorption layer 6 having a first light passage opening 6a through which the light L1 traveling to the spectroscopic portion 3 passes and a second light passage opening 6b through which the light L2 traveling to the light detection portion 41 passes is formed on the front surface 2a. The light passage hole 42 faces the first light passage opening 6a, and the light detection portion 41 faces the second light passage opening 6b.
Abstract translation: 要解决的问题：提供具有高可靠性的分光模块。 解决方案：分光模块1包括使LED L1和L2透过的主体部分2; 光谱部分3，其从主体部分2的前表面2a光谱地分离入射在主体部分2上的光L1，并将光谱分离的光反射到前表面2a的侧面; 光检测部41，其检测由分光部3光谱分离并反射的光2; 以及支撑在主体部2的前表面2a上的光检测元件4.光检测元件4具有光通过孔42，通过光通过孔42使光L1行进到分光部3。 具有第一光通路开口6a的光吸收层6，通过该第一光通道开口6a通过光分路部分3行进的光L1和通过光检测部分41的光L2通过的第二光通道开口6b 2A。 光通过孔42面对第一光通道开口6a，光检测部分41面向第二光通道开口6b。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JPH04152585A
公开(公告)日：1992-05-26
申请号：JP27693890
申请日：1990-10-16
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , SUGIMOTO KENICHI , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUZUKI TOMOKO , SUGA HIROBUMI
Abstract: PURPOSE:To realize a link between a optical pulse generator and an amplifier by imprinting the voltage pulse that runs the optical amplifier at a set phase slightly ahead of the optical pulse from the optical generator entering the optical amplifier in a situation when an optical pulse produced by an optical generator is input to the following medium that functions as an optical amplifier. CONSTITUTION:Two or more laser diodes which act as the optical generator 1 and the optical amplifier 2 are optically placed in order, a voltage pulse PA is applied to the optical generator stimulating it to operate as an optical pulse generator, and the optical pulse output A is input to the following optical amplifier 2. At this time, the voltage pulse PB applied to the following optical amplifier 2 is applied at a slightly different time or phase than the previous voltage pulse PA. In other words, the electric pulse PB is applied to the following amplifier 2 before the optical pulse A from the optical pulse generator 1 is input to the following optical amplifier 2.
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公开(公告)号：JPH0480974A
公开(公告)日：1992-03-13
申请号：JP19571090
申请日：1990-07-24
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
IPC: H01L31/10 , H01L31/108
Abstract: PURPOSE:To enable a semiconductor photodetective element to be lessened in noise and manufacturing cost and easily integrated with an electronic circuit by a method wherein a semi-insulating semiconductor possessed of a deep interband level is used as an active layer. CONSTITUTION:A semi-insulating semiconductor serves as an active layer 1, where photoelectric conversion takes place in the semi-insulating semiconductor in such a manner that electrons 63-1 are excited 62-1 from a deep interband level 4 caused by the inner defects inside the semiconductor or impurities to a conduction band 2 or holes 63-2 are excited 62-2 from the interband level 4 to a valence band 3. The semi-insulating semiconductor is so set as to respond to light rays longer than those correspondent to the energy band gap of the semiconductor in wavelength. At this point, a semiconductor photodetective element is formed in a PIN structure, where a semi-insulating semiconductor 10mum or more in thickness is used as a photodetective active layer. The element is also formed into a Schottky type where a semi-insulating semiconductor 10mum or more in thickness and a metal thin film are made to constitute a Schottky junction. Furthermore, the element is a metal-semiconductor-metal structure provided with a pair of Schottky junctions disposed in lateral symmetry on the same plane of the semi-insulating semiconductor.
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公开(公告)号：JPH03104175A
公开(公告)日：1991-05-01
申请号：JP24162489
申请日：1989-09-18
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
IPC: H01L31/10 , H01L31/108
Abstract: PURPOSE:To reduce dark current by irradiating the interface or metal and semiconductor with a light whose wavelength is longer than the wavelength corresponding to the energy gap of a substrate. CONSTITUTION:The interface of metal 2 and a semiconductor substrate 1 is irradiated with an incident light 6 of long wavelength. Electron emitted from the contact interface of the metal 2 and the substrate 1 by the incident light 6 is subjected to high speed drift transition by a high electric field applied between electrodes. Hence a very high speed optical signal also can be received. When the wavelength of a light is shorter than 1.4-3. lmum which correspond to the barrier height of 0.4-0.9eV formed by using Si or GaAs as the semiconductor substrate, the light can be sufficiently received. Hence a very high speed photo detector for long wavelength use or OEIC can be manufactured by using the substrate like Si or GaAs whose semiconductor process technique has been established, and further the dark current can be reduced.
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