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公开(公告)号：JPH0738418A
公开(公告)日：1995-02-07
申请号：JP17573393
申请日：1993-07-15
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
IPC: H03K19/14
Abstract: PURPOSE:To reduce the cost and to improve the yield for the circuit integration by devising the circuit such that a bias voltage applied to plural semiconductor light receiving elements is varied through plural control electronic circuits so as to revise a logic function thereby decreasing the circuit scale. CONSTITUTION:Each of semiconductor light receiving elements 11,1 2...1n receiving each of input optical signals 71, 72...7n respectively is connected to each of operational amplifiers 21, 22...2n setting a bias voltage. A bias voltage applied to each light receiving element is separately set by a voltage signal input to input terminals 61, 62...6n of the operational amplifiers. The output voltage of the operational amplifiers changes linearly with respect to an input voltage within the level range of a power supply voltage being usually + or -15V in response to the ratio of each of feedback resistors 41, 42...4n to each of input resistors 31, 32...3n. Thus, the bias voltage and its polarity of the light receiving elements 11, 12...1n are freely controlled by the application of a voltage signal to the operational amplifiers 21, 22...2n. Thus, any of plural logic arithmetic operation functions is electrically selected by one circuit.
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公开(公告)号：JPH065878A
公开(公告)日：1994-01-14
申请号：JP15951392
申请日：1992-06-18
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , HIROHATA TORU , NAKAJIMA KAZUTOSHI , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO
IPC: H01L29/80 , H01L29/804
Abstract: PURPOSE:To provide an electron mobility control device capable of operation at normal temperature, in which long scattering relaxation time (high mobility) is achieved as in an electron tube and it is controlled to a desired value without using a minute structure. CONSTITUTION:An electron mobility device includes a high-resistivity semiconductor 11 having a carrier density less than 10 cm . The semiconductor 1 includes a cathode 21 for carrier injection, a biasing means having an anode 23 and a grid 22 for maintaining a specific average field intensity, and a gate control means for the bias means. The specific field intensity is given by {(2.h.n) .omegaop }/{(2.pi) .q} is optical phonon frequency, Eg is band gap energy of semiconductor, (m) is mass of the electron, and L is distance between electrodes.
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公开(公告)号：JPH0595131A
公开(公告)日：1993-04-16
申请号：JP31804691
申请日：1991-12-02
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
IPC: H01L31/10
Abstract: PURPOSE:To realize a photodetector with photosensitivity over a wide range of wavelengths without selecting several photodetector according to light wavelength. CONSTITUTION:A semi-insulating GaAs substrate 11 serves as an activated region that has a photoelectric conversion function as well as a carrier transport function. A pair of surface electrodes 21 and 22 are formed several mum apart symmetrically facing each other on the surface of the GaAs substrate 11, and these parts constitute a photosensitive unit, in which the surface electrodes are formed like a comb in shape, which provides a larger effective photosensitive area. A rear electrode 23 is formed as a third electrode on the rear side of the GaAs substrate, and an insulating film 3 is formed between the GaAs substrate 11 and the surface electrodes except the place for the photosensitive part. A bias of several voltages from a power supply 71 is applied between the surface electrodes 21 and 22, and then a bias is also applied between the surface electrode and the rear electrode so that the inner electrical field is over 0.5KV/cm vertically in the substrate. Consequently, the light sensitivity can be adjusted almost equally to the light with shorter and longer wavelengths as compared with the wavelength of the energy band gap of GaAs.
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公开(公告)号：JPH0444839B2
公开(公告)日：1992-07-22
申请号：JP19138588
申请日：1988-07-29
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NAKAJIMA KAZUTOSHI , SUGA HIROBUMI , SUGIMOTO KENICHI , MIZUSHIMA YOSHIHIKO , HIROHATA TOORU , IIDA TAKASHI , WARASHINA SADAHISA
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公开(公告)号：JPH03200375A
公开(公告)日：1991-09-02
申请号：JP34413289
申请日：1989-12-27
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , HIROHATA TORU , NAKAJIMA KAZUTOSHI , SUGIMOTO KENICHI , IIDA TAKASHI , SUZUKI TOMOKO
IPC: H01L31/04
Abstract: PURPOSE:To effectively use a light component smaller than an energy gap and to efficiently output power by using a metal-high resistance semiconductor Schottky barrier, and reducing the thickness of the semiconductor to strengthen an inner built-in electric field. CONSTITUTION:Ga and As are simultaneously deposited in vacuum on a tungsten plate 1 to form a high resistance GaAs thin layer 2 with 1-2mum of thickness. An Si is ion implanted to the layer 2 to form an ohmic contact 3, and a contact electrode 4 with it is formed by depositing a NESA material in vacuum. When light is applied from the electrode 4 side, a light having an energy larger than an energy gap (Eg) is absorbed in the layer 2 to form carrier, and the light having the energy smaller than the Eg excites the carrier from Schottky metal. Thus, the thickness of the semiconductor is reduced to provide sufficient size to collect the carrier in a built-in electric field. Thus, a light component smaller than the energy gap can effectively be used to efficiently output power.
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Patent Agency Ranking
公开(公告)号：JPH0327410A
公开(公告)日：1991-02-05
申请号：JP16191389
申请日：1989-06-23
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
Abstract: PURPOSE:To miniaturize and simplify a circuit and to display a high speed characteristic which light has to a maximum by providing two optical half adders where an optical signal executes input/output, and an optical latch memory. CONSTITUTION:The adder consists of two optical half adders 1 where the optical signal executes input/output, and one optical latch memory 2 which executes delay for one clock. When two binary numbers A and B are sequentially inputted to the optical half adder of a former stage by making up digits, the sum outputs are given to one input of the optical half adder in a post-stage for respective digits, and a carry output C is given to the optical latch memory 2. Data which is temporarily stored in the optical latch memory 2 is added to the sum output of the subsequent digit by the optical half adder 1 in the former-stage by the optical half adder in the post- stage. Consequently, the sum of the binary numbers is obtained as the sum output S of the optical half adder 1 of the post-stage. Then, an operation result can be outputted for one clock by constituting the optical half adders 1 and 1 in such a way that the optical signal executes input/output, and the operation speed of the full addition operation is prevented from being damaged even if they are connected in serial. Thus, the operation speed is improved.
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公开(公告)号：JPH031576A
公开(公告)日：1991-01-08
申请号：JP13500089
申请日：1989-05-29
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUZUKI TOMOKO , SUGA HIROBUMI
Abstract: PURPOSE:To suppress a waveform distortion upon inputting/outputting of a high-frequency electric signal to a minimum limit by directly coupling a signal pin of an upper part to a central conductor of a lower part, and inputting or outputting a high frequency current or voltage signal to or from a photoelectric transducer associated therewith. CONSTITUTION:An upper part becomes a sealed part containing a chip 8 of a photoelectric transducer, and a lower part becomes a high frequency coaxial connector. The chip 8 is disposed at the center of the upper part, and connected to a signal pin 2 disposed eccentrically via a bonding wire 9. In order to connect the pin 2 to the central conductor of the connector, the pin 2 must be bent on the way to be brought to the center. In this case, when the pin is abruptly bent, high frequency characteristic is lost. Accordingly, it is desirable to obliquely bend it. A circuit for biasing is added to the connector of the lower part, and it is desirable to form the whole in an integral structure including it.
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公开(公告)号：JPH02190019A
公开(公告)日：1990-07-26
申请号：JP1025689
申请日：1989-01-19
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUGA HIROBUMI
Abstract: PURPOSE:To attain input/output of a control signal and an input output signal in terms of light by providing a light receiving element, a light emitting element, a guide line leading an electric signal to the light emitting element and an optical input output section supplying an input optical signal to the light receiving element and leading an output optical signal outputted from the light emitting element. CONSTITUTION:An electric signal sent from a light receiving element 1 is sent to a light emitting element 2, the light emitting element 2 receives the electric signal and outputs an optical signal and the optical signal reaches the element 1 via a light guide path 4. An optical signal is supplied from the light emitting element 101 to the element 1 and a half mirror 5 is provided to lead out the optical signal outputted from the element 2 externally. Thus, an optical input and output section 6 consists of them. With the element 1 supplying an optical signal, a signal is transferred and latched by a closed circuit comprising the guide path 3, the element 2, the light guide path 4 and the element 1, and the optical signal of the element 2 is extracted from the optical input and output section. Thus, the light receiving operation is made corresponding with the logic operation to apply optical input/output and storage.
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公开(公告)号：JPH0271578A
公开(公告)日：1990-03-12
申请号：JP21581788
申请日：1988-08-30
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , IIDA TAKASHI , HIROHATA TORU , SUGIMOTO KENICHI , WARASHINA SADAHISA , NAKAJIMA KAZUTOSHI
Abstract: PURPOSE:To enable the constitution of an oscillator or an amplifier which covers a wide frequency band that inludes a superhigh frequency to a light wave region by a method wherein the frequency of an electromagnetic wave is made to be within the range that a cyclotron frequency is added to or substracted from a medium plasma frequency, and its polarized wave front is contained in a plane which crosses both the input directions of a magnetic field and the electromagnetic wave itself at a right angle. CONSTITUTION:An indium antimonide semiconductor is used as a medium 1 which contains free carriers, and the medium 1 is placed in a magnetic field 2. Electrodes 3 and 4 are provided to both ends of the medium 1 respectively, and a voltage is applied from a power source 7 to the electrodes 3 and 4 to generate a carrier accelerating electric field between them, and the medium 1 is arranged so as to make the carrier accelerating electric field cross the magnetic field 2 at a right angle. Light rays are directed to the medium 1 passing through light through windows provided to the electrodes 3 and 4. At this point, the polarized wave front of light rays is so positioned as to intersect the magnetic field 2 at a right angle. By the irradiation of the medium 2 with light rays, the amplified output light can be obtained from the side opposite to the irradiated side. The amplification factor of about 10dB or more per medium 1cm in length can be expected to the outside.
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公开(公告)号：JPH024014A
公开(公告)日：1990-01-09
申请号：JP15206088
申请日：1988-06-20
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUSHIMA YOSHIHIKO , NAKAJIMA KAZUTOSHI , HIROHATA TORU , IIDA TAKASHI , WARASHINA SADAHISA , SUGIMOTO KENICHI , SUGA HIROBUMI
IPC: H01L27/14 , H01L27/146 , H01L27/148 , H01L27/15 , H03K19/14
Abstract: PURPOSE:To execute a high-speed logical operation by combining two light- receiving elements having electrode structures substantially symmetrical with respect to right and left and composing a basic circuit with three terminals at both terminals and a midpoint. CONSTITUTION:Light-receiving elements 11 and 12 having the electrode structures symmetrical with respect to right and left are connected in series, and optical logical gate circuit 10 with three terminals is composed at both terminals 19 and 20 and a connecting point 21. The light-receiving elements 11 and 12 are irradiated by light input signals X and Y. To a gate circuit 10, as peripheral circuits, a bias blocks 13 and 14, a level shift diode 15, and load resistances 16-18 are connected. To the light-receiving elements 11 and 12, positive and negative bias voltages are supplied from power sources 22 and 23. When the signals X and Y are turned off, the outputs of sum and carry logical output terminals 24 and 25 are made into zero. When only the signal X or Y is on, a +H or -H is outputted to the terminal 24. When the signals X and Y are on, the terminal 24 is made into the output zero, and the terminal 25 outputs an H. Thus, the high-speed logical operation is executed.
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