公开(公告)号：DE10056295A1

公开(公告)日：2002-05-23

申请号：DE10056295

申请日：2000-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  GABRIC ZVONIMIR ,  KROENKE MATTHIAS ,  SCHINDLER GUENTER

IPC: H01L21/02 ,  H01L21/285 ,  H01L27/115 ,  H01L27/11502 ,  H01L21/8239

Abstract: Production of a ferroelectric capacitor comprises inserting a ferroelectric or para-electric material as dielectric (6) between precious metal electrodes (3, 4) of the capacitor (1); and depositing a TaSixNy layer as hydrogen diffusion barrier (7) over the capacitor to protect the ferroelectric or para-electric material from hydrogen used in the integration process. An Independent claim is also included for a highly integrated non-volatile storage capacitor. Preferred Features: The TaSixNy layer is structured so that it lies between an electrode plate of the capacitor and a Ti/TiN barrier layer in a neighboring through-hole filled with tungsten.