公开(公告)号：DE10122845A1

公开(公告)日：2002-11-21

申请号：DE10122845

申请日：2001-05-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01L21/68 ,  H01L21/58

Abstract: Supporting and protecting device comprises a support wafer (2) with a channel system (5) on one side with protrusions (3) for supporting wafers and an opening (4) for inserting a current medium into the channel system. An Independent claim is also included for a process for separating a join between a wafer and the supporting and protecting device. Preferred Features: The protrusions are bars and/or platforms. The channel system is open in the edge region of the support wafer. The support wafer is made from silicon.

公开(公告)号：DE10106426A1

公开(公告)日：2002-08-29

申请号：DE10106426

申请日：2001-02-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01L29/41 ,  H01L29/417 ,  H01L29/43 ,  H01L29/78 ,  H01L21/336

Abstract: Vertical trench field effect transistor comprises: a substrate having source/drain regions (1, 3) and a channel region (3); a transistor trench (4); a gate isolating layer (5); a control layer (6) in the channel region to control the transistor; a recombination trench (13, 13'); and a recombination layer (15) formed in partial regions of the channel region to recombine charge carriers. Vertical trench field effect transistor comprises: a substrate having source/drain regions (1, 3) and a channel region (3); a transistor trench (4) extending into the first source/drain region; a gate isolating layer (5) formed in the channel region on the walls of the transistor trench; a control layer (6) in the channel region to control the transistor; a recombination trench (13, 13') extending close to the transistor trench up to the channel region; and a recombination layer (15) formed in partial regions of the channel region to recombine charge carriers. An independent claim is also included for a process for the production of a vertical trench field effect transistor. Preferred Features: The recombination layer is a metal and/or silicide layer, preferably a titanium, tungsten or platinum silicide layer. The recombination trench has an upper and a lower trench section, in which the upper section extends into the upper region of the channel region and has a recombination isolating layer (14).

公开(公告)号：DE10140826A1

公开(公告)日：2002-07-04

申请号：DE10140826

申请日：2001-08-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  SCHMIDT THOMAS

IPC: H01L21/68 ,  H01L21/58 ,  H01L21/60 ,  H01L23/12

Abstract: Processing a thin semiconductor wafer (1) having an active front side on which a front side supporting substrate (3) is mounted using a bonding layer (4) comprises: (a) heat treating the rear side of the wafer; (b) applying a metal-based bonding covering layer (7) on the rear side and/or on a rear side substrate (10); (c) contacting the rear side substrate and the wafer forming a conducting metal-based bonding layer (11); (d) removing the front side substrate; and (e) structuring. The metal-based bonding material is selected so that the materials, especially the wafer materials, in the neighboring layers and the metal-based bonding material are practically unmixed. Preferred Features: A thick layer of silver paste or a conducting paste made from silver alloys, other noble metals or noble metal alloys is used as the metal-based bonding material. The rear side of the wafer and/or the contact surface of the rear side substrate is metallized before applying the metal-based bonding covering layer.

公开(公告)号：DE10029791C2

公开(公告)日：2002-04-18

申请号：DE10029791

申请日：2000-06-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  GERSS MATTHIAS

IPC: H01L21/20 ,  H01L21/58 ,  H01L21/68 ,  H01L21/30

Abstract: A method for producing a re-releasable bond between two wafers which is stable at high temperatures and mechanically stable is described. The two wafers to be bonded are placed one on top of the other in such a way that a surface of the first wafer is disposed on a surface of the second wafer. Interspaces at least partially connecting the surfaces are created between the wafers. A liquid glass compound is introduced into the interspaces in such a way that a liquid glass film wetting the inner surfaces of the interspaces is formed, in which process voids that are connected to the atmosphere surrounding the wafers remain inside the interspaces wetted with the liquid glass compound. To transform the wetting liquid glass film into a solid silicon dioxide film, the wafers lying one on top of the other are subjected to a temperature treatment.

公开(公告)号：DE10029035C1

公开(公告)日：2002-02-28

申请号：DE10029035

申请日：2000-06-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01L21/68 ,  H01L21/58

公开(公告)号：DE10029791A1

公开(公告)日：2002-01-03

申请号：DE10029791

申请日：2000-06-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  GERSS MATTHIAS

IPC: H01L21/20 ,  H01L21/58 ,  H01L21/68 ,  H01L21/30

Abstract: A method for producing a re-releasable bond between two wafers which is stable at high temperatures and mechanically stable is described. The two wafers to be bonded are placed one on top of the other in such a way that a surface of the first wafer is disposed on a surface of the second wafer. Interspaces at least partially connecting the surfaces are created between the wafers. A liquid glass compound is introduced into the interspaces in such a way that a liquid glass film wetting the inner surfaces of the interspaces is formed, in which process voids that are connected to the atmosphere surrounding the wafers remain inside the interspaces wetted with the liquid glass compound. To transform the wetting liquid glass film into a solid silicon dioxide film, the wafers lying one on top of the other are subjected to a temperature treatment.

公开(公告)号：DE102015108070A1

公开(公告)日：2016-11-24

申请号：DE102015108070

申请日：2015-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01M2/10 ,  H01M2/02 ,  H01M10/04

Abstract: Eine Batterie umfasst eine Mehrzahl von Batteriezellen. Die Batteriezellen aus der Mehrzahl von Batteriezellen sind jeweils durch eine Kapselungsstruktur gekapselt. Die Batterie umfasst eine Einbettungsstruktur, die benachbarte Batteriezellen aus der Mehrzahl von Batteriezellen trennt. Ein Einbettungsmaterial von zumindest einem Teil der Einbettungsstruktur ist zwischen den benachbarten Batteriezellen angeordnet. Eine Scherfestigkeit des Einbettungsmaterials von zumindest einem Teil der Einbettungsstruktur ist weniger als 30% einer Scherfestigkeit eines Kapselungsmaterials von zumindest einem Teil der Kapselungsstruktur.

公开(公告)号：DE102013108808A1

公开(公告)日：2014-02-27

申请号：DE102013108808

申请日：2013-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01L23/373 ,  B82Y30/00 ,  C25D5/10 ,  C25D5/54 ,  D01F9/12

Abstract: Ein Verfahren (100) zur Herstellung eines Kühlkörpers gemäß einer Ausführungsform kann Folgendes aufweisen: Bereitstellen (102) eines Kohlenstofffasergewebes mit mehreren Kohlenstofffasern und mehreren Öffnungen, wobei die Öffnungen von einer ersten Seite des Gewebes zu einer zweiten Seite des Kohlenstofffasergewebes führen; und Elektroplattieren (104) des Kohlenstofffasergewebes mit Metall, wobei Metall mit einer höheren Rate auf der ersten Seite als auf der zweiten Seite des Kohlenstofffasergewebes abgeschieden wird. Ein Verfahren zur Herstellung eines Kühlkörpers gemäß einer anderen Ausführungsform kann Folgendes aufweisen: Bereitstellen eines Kohlenstoff/Metall-Verbundstoffs mit mehreren mit Metall beschichteten Kohlenstofffasern und mehreren Öffnungen, wobei die Öffnungen von einer ersten Seite des Kohlenstoff/Metall-Verbundstoffs zu einer zweiten Seite des Kohlenstoff/Metall-Verbundstoffs führen; Anordnen des Kohlenstoff/Metall-Verbundstoffs über einem Halbleiterelement, so dass die erste Seite des Kohlenstoff/Metall-Verbundstoffs dem Halbleiterelement zugewandt ist; und Kontaktieren des Kohlenstoff/Metall-Verbundstoffs an das Halbleiterelement mittels eines Elektroplattierungsprozesses, wobei Metallelektrolyt zu einer Grenzfläche zwischen dem Kohlenstoff/Metall-Verbundstoff und dem Halbleiterelement über die mehreren Öffnungen zugeführt wird.

公开(公告)号：DE102009043202A1

公开(公告)日：2010-04-15

申请号：DE102009043202

申请日：2009-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/41 ,  H01L29/73 ,  H01L29/772

公开(公告)号：DE102005047106B4

公开(公告)日：2009-07-23

申请号：DE102005047106

申请日：2005-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  MAUDER ANTON

IPC: H01L23/498 ,  H01B3/10 ,  H01L21/48 ,  H01L21/50 ,  H01L23/14 ,  H01L25/07 ,  H05K1/11 ,  H05K1/14 ,  H05K1/18 ,  H05K3/30 ,  H05K7/20

Abstract: A power semiconductor module has a controllable semiconductor chip (50), a first printed circuit board (1), a second printed circuit board (2), and also has one or a plurality of passive components (13, 18). The first printed circuit board (1) may have a conductor track structure (12, 13, 14), and the second printed circuit board (2) may have a conductor track structure (21, 22, 23, 24). Furthermore, an opening (19) in which the semiconductor chip (50) is arranged can be provided in the first printed circuit board (1). Furthermore, at least one passive component (13, 18) can be arranged on the first printed circuit board (1) or on the second printed circuit board (2).