公开(公告)号：SG72706A1

公开(公告)日：2000-05-23

申请号：SG1996010851

申请日：1996-10-10

Applicant: INT RECTIFIER CORP

Inventor： DUBHASHI AJIT ,  AFTANDILIAN LEON

IPC: H01L29/78 ,  H02M1/08 ,  H02M7/537 ,  H01L27/04 ,  H02M7/538 ,  H03B1/00 ,  H03F1/52 ,  H03K17/06 ,  H03K17/16 ,  H02M7/5387 ,  H03F3/42 ,  H03K17/64

Abstract: In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through LS1 and LS2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances LS1 and LS2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the LS1 and LS2 inductances. The external, charging capacitor Cb value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 mu F, for a given circuit, IGBT and layout combination. The size of the CVCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, CVCC is at about ten times the value of the sum of the Cb capacitance in the circuit. The resistance Rb in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor RCOM is optionally added between the common nodes of the driver circuit and the power device circuit.

公开(公告)号：GB2307605B

公开(公告)日：2000-05-10

申请号：GB9621139

申请日：1996-10-10

Applicant: INT RECTIFIER CORP

Inventor： DUBHASHI AJIT ,  AFTANDILIAN LEON

IPC: H01L27/04 ,  H01L29/78 ,  H02M1/08 ,  H02M7/537 ,  H02M7/538 ,  H03B1/00 ,  H03F1/52 ,  H03K17/06 ,  H03K17/16

Abstract: In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through LS1 and LS2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances LS1 and LS2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the LS1 and LS2 inductances. The external, charging capacitor Cb value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 mu F, for a given circuit, IGBT and layout combination. The size of the CVCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, CVCC is at about ten times the value of the sum of the Cb capacitance in the circuit. The resistance Rb in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor RCOM is optionally added between the common nodes of the driver circuit and the power device circuit.

公开(公告)号：IT1296074B1

公开(公告)日：1999-06-09

申请号：ITMI972487

申请日：1997-11-07

Applicant: INT RECTIFIER CORP

Inventor： DUBHASHI AJIT ,  CLEMENTE STEFANO ,  CHEY CHRISTOPHER

IPC: H02P6/18 ,  G01R19/00 ,  H02P6/00

Abstract: A current sensing circuit including a shunt resistor coupled, at one end, to the low-side transistor of a half bridge circuit and, at its other end, to a load. The voltage sensed across the shunt resistor is proportional to the current delivered to the load. A level shifting circuit is provided to transpose the sensed voltage to a low voltage signal which can be fed back to control commutation of the transistors in the half bridge circuit.

公开(公告)号：ITMI972487A1

公开(公告)日：1999-05-07

申请号：ITMI972487

申请日：1997-11-07

Applicant: INT RECTIFIER CORP

Inventor： CHEY CHRISTOPHER ,  CLEMENTE STEFANO ,  DUBHASHI AJIT

IPC: H02P6/18 ,  G01R20060101 ,  G01R19/00 ,  H02P6/00

公开(公告)号：GB2320762A

公开(公告)日：1998-07-01

申请号：GB9723677

申请日：1997-11-07

Applicant: INT RECTIFIER CORP

Inventor： DUBHASHI AJIT ,  CLEMENTE STEFANO ,  CHEY CHRISTOPHER

IPC: H02P6/18 ,  G01R19/00 ,  H02P6/00

Abstract: A current sensing circuit comprises a resistor RShunt suitable for coupling to a load supply arrangement such that the voltage across the resistor is proportional to the current delivered to the said load. The voltage signal across the resistor is processed via circuitry for adjusting the voltage signal relative to a reference signal such that the resulting voltage signal may be used as a feedback signal to control the commutation of a converter device. The current sensing resistor Rshunt may be located in the converter device with one end connected to a junction between a high-side switching device and a low-side switching device of a half bridge arrangement and the other end being connected to the load. Analog or digital circuitry arrangements may be employed for processing the voltage signal.

公开(公告)号：DE19709233A1

公开(公告)日：1997-10-30

申请号：DE19709233

申请日：1997-03-06

Applicant: INT RECTIFIER CORP

Inventor： DUBHASHI AJIT ,  FURE TYLER

IPC: H03K17/16 ,  H03K17/567 ,  H03K17/042

Abstract: In a motor controller circuit, an integrated circuit driver drives a plurality of switching transistors which are organized along a top rail and a bottom rail. To reduce the conduction of current through the parasitic diode DS1 of the integrated circuit, the switching transistors at the bottom rail are provided with individual Kelvin emitter connections, which reduce the parasitic internal inductances, which otherwise produce highly negative voltages when the top rail transistors are turned off. Further, individual traces are provided on the printed circuit board from the COM terminal to the Kelvin emitters. Finally, a small resistance is provided in series with each Kelvin emitter connection which increases the resistance in series with the parasitic diodes and hence reduces the current flowing in the parasitic diodes.