Electronic switching and reverse polarity protection circuit

    公开(公告)号:US10277219B2

    公开(公告)日:2019-04-30

    申请号:US15639834

    申请日:2017-06-30

    Abstract: In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

    Semiconductor device comprising a transistor

    公开(公告)号:US10109734B2

    公开(公告)日:2018-10-23

    申请号:US15095615

    申请日:2016-04-11

    Abstract: A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. The source region, the body region and the drain region are arranged along the first direction. The body region comprises first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body. The body region further comprises a second ridge. A width of the second ridge is larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.

    Switch Comprising a Field Effect Transistor and Integrated Circuit
    46.
    发明申请
    Switch Comprising a Field Effect Transistor and Integrated Circuit 审中-公开
    包含场效应晶体管和集成电路的开关

    公开(公告)号:US20160322347A1

    公开(公告)日:2016-11-03

    申请号:US15139800

    申请日:2016-04-27

    Abstract: A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.

    Abstract translation: 开关包括具有第一主表面的半导体衬底中的场效应晶体管。 场效应晶体管包括源区域,漏极区域,体区域和在体区域处的栅电极,栅电极被配置为控制在体区域中形成的沟道的导电性。 栅电极设置在栅极沟槽中。 主体区域沿着源极区域和漏极区域之间的第一方向设置,第一方向平行于第一主表面。 身体区域具有沿着第一方向延伸的脊的形状。 体区域与源极区域和漏极区域相邻。 该开关还包括源极接触部和主体接触部,该源极接触部电连接到源极端子。 身体接触部分与源极接触部分接触并且与身体区域电连接。

    Semiconductor Device Comprising a Transistor Including a Body Contact Portion and Method for Manufacturing the Semiconductor Device
    47.
    发明申请
    Semiconductor Device Comprising a Transistor Including a Body Contact Portion and Method for Manufacturing the Semiconductor Device 审中-公开
    包括体接触部分的晶体管的半导体器件和用于制造半导体器件的方法

    公开(公告)号:US20160307891A1

    公开(公告)日:2016-10-20

    申请号:US15096629

    申请日:2016-04-12

    Abstract: A semiconductor device comprises a transistor in a semiconductor body having a main surface. The transistor comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the main surface. The gate electrode is disposed in a trench extending in the first direction. The semiconductor device further comprises a source contact electrically connected to the source region and to a source terminal. The source contact is disposed in a source contact opening in the main surface. The semiconductor device further comprises a body contact portion electrically connected to the source terminal and to the body region. The body contact portion vertically overlaps with the source region.

    Abstract translation: 半导体器件包括具有主表面的半导体本体中的晶体管。 晶体管包括源区域,漏极区域,体区域,漂移区域和在身体区域处的栅电极。 主体区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置,第一方向平行于主表面。 栅电极设置在沿第一方向延伸的沟槽中。 半导体器件还包括电源连接到源极区域和源极端子的源极触点。 源触点设置在主表面中的源极接触开口中。 半导体器件还包括电连接到源极端子和主体区域的主体接触部分。 身体接触部垂直与源区重叠。

    Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device
    48.
    发明申请
    Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device 有权
    半导体器件,集成电路和制造半导体器件的方法

    公开(公告)号:US20160268423A1

    公开(公告)日:2016-09-15

    申请号:US14656041

    申请日:2015-03-12

    Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The gate electrode is disposed in trenches extending in a first direction parallel to the first main surface. The gate electrode is electrically coupled to a gate terminal. The channel region and the drift zone are disposed along the first direction between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. The conductive layer is electrically connected to the gate terminal.

    Abstract translation: 半导体器件包括具有第一主表面的半导体衬底中的晶体管。 晶体管包括源极区域,漏极区域,沟道区域,漂移区域和与沟道区域的至少两侧相邻的栅电极。 栅电极设置在与第一主表面平行的第一方向上延伸的沟槽中。 栅极电连接到栅极端子。 沟道区域和漂移区沿着源极区域和漏极区域之间的第一方向设置。 半导体器件还包括在栅电极下方并与栅电极绝缘的导电层。 导电层电连接到栅极端子。

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