公开(公告)号：JP2003128419A

公开(公告)日：2003-05-08

申请号：JP2001323932

申请日：2001-10-22

Applicant: JSR CORP

Inventor： SHINODA TOMOTAKA ,  IKEDA NORIHIKO ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: C01G1/00 ,  C01G35/00 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To obtain practical ferroelectric thin film-forming coating capable of forming a ferroelectric thin film in which crystallization is facilitated at a temperature of 650 deg.C or below, and capable of giving a ferroelectric thin film having good hysteresis and saturation characteristics. SOLUTION: The ferroelectric thin film-forming coating comprises (A) a heteropolyacid and (B) an organometallic compound having at least one selected from Ta, Bi, Sr, Nb, Pb, Zr and Ti as a element.

公开(公告)号：JP2003115484A

公开(公告)日：2003-04-18

申请号：JP2001307280

申请日：2001-10-03

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOHIKO ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: C01G35/00 ,  C09D201/00 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/193

Abstract: PROBLEM TO BE SOLVED: To obtain a coat solution for forming a ferroelectric thin film on a substrate, especially, forming a ferroelectric thin film having good hysteresis characteristics and saturation characteristics on a substrate of platinum, iridium, iridium oxide, etc. SOLUTION: The coat solution for forming the ferroelectric thin film contains an organic solvent (A) shown by the general formula R R C=O (1) shown below and an organic metal compound (B). (R and R are C1-C6 alkyl independent of each other).

公开(公告)号：JP2003063809A

公开(公告)日：2003-03-05

申请号：JP2001256559

申请日：2001-08-27

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： SHINODA TOMOTAKA ,  IKEDA NORIHIKO ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: C01B13/32 ,  C01G35/00 ,  C23C18/12 ,  H01B3/12 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To produce a highly safe composition for forming a ferroelectric thin film having a uniform and suitable thickness on a substrate of platinum, iridium, iridium oxide and the like.
SOLUTION: The coating solution for forming the ferroelectric thin film comprises a solvent made up of a compound expressed by following general formula (1) and a compound expressed by following general formula (2), and an organic metal compound. C
3 H
7 OCH
2 CHCH
3 OH...(1) C
3 H
7 OCHCH
3 CH
2 OH...(2).
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了生产在铂，铱，氧化铱等的基材上形成均匀且合适厚度的铁电薄膜的高度安全的组合物。 解决方案：用于形成铁电薄膜的涂布溶液包括由由以下通式（1）表示的化合物和由以下通式（2）表示的化合物组成的溶剂和有机金属化合物。 C 3 H 7 OCH 2 CHCH 3 OH ...（1）C 3 H 7 OCHCH 3 CH 2 OH ...（2）。

公开(公告)号：JP2001284343A

公开(公告)日：2001-10-12

申请号：JP2000092544

申请日：2000-03-29

Applicant: JSR CORP

Inventor： KOMATSU SATOSHI ,  IKEDA NORIHIKO ,  YAMADA KINJI

IPC: H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a film that is suitable for ferroelectrics which have small leakage current. SOLUTION: This method of forming a film contains (a) a step of forming a film which is composed of a metallic compound containing a structure, expressed by MO (where M denotes a metallic element), and (b) a step of irradiating the film formed in (a) with far infrared rays.