Abstract:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
Abstract:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
Abstract:
Una composición de ligante para electrodo de un dispositivo acumulador eléctrico, la composición de ligante contiene: (A) por lo menos un polímero elegido entre el grupo formado por los ácidos poliámicos y los polímeros imidizados de los mismos que tienen un grado de imidización del 50 % o menos; y (B) agua, en la que el cociente Ma/Mb del contenido de el polímero (A), Ma (partes en peso), por el contenido de agua (B), Mb (partes en peso), se sitúa entre 500 y 5.000.
Abstract:
PROBLEM TO BE SOLVED: To provide a power storage cell which has high output voltage, and has low toxicity to a living body even when a solid electrolyte layer is exposed to the living body.SOLUTION: A power storage cell 10 includes: a power storage unit 32 formed by laminating a positive electrode 40, a negative electrode 50, and a solid electrolyte layer 60 provided between the positive electrode 40 and the negative electrode 50; and an outer package 10 in which the power storage unit 32 is housed. The plurality of power storage units 32 are provided, and the plurality of power storage units 32 housed in the outer package 10 are connected in series and the solid electrolyte layer 60 contains a silver ion- conductive solid electrolyte.
Abstract:
PROBLEM TO BE SOLVED: To provide a binder composition for an electrode, which provides a power storage device that has a large charge and discharge capacity and has small degree of capacity degradation due to repetition of charge and discharge cycles.SOLUTION: The binder composition for the electrode contains (A) at least one polymer selected from the group consisting of polyamic acid and imidized polymers of the polyamic acid, and (B) water. When the content of the (A) polymer is expressed by Ma pts.mass and the content of the (B) water is expressed by Mb pts.mass, the ratio of Ma/Mb is 500-10,000.
Abstract:
PROBLEM TO BE SOLVED: To provide a capacitor comprising a high-quality dielectric layer which is formed in a short baking time. SOLUTION: Atmosphere in a processing apparatus 100 is adjusted to, for example, oxygen atmosphere, by a gas supply source 112 and the like. Interior of a thermal processing apparatus 101 is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat 161 having a dielectric precursor layer formed is loaded into the thermal processing apparatus 101 at a speed at which no defect is produced in wafer W. Thereafter, a reaction tube of the thermal processing apparatus 101 has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in the thermal processing apparatus 101 and then to room temperature in the processing apparatus 100, and carried out from the processing apparatus 100. Before dielectric precursor layer formed on the wafer W is baked, it is maintained for predetermined time at the temperature higher than the temperature at which solvent in the dielectric precursor layer is volatilized and lower than the temperature at which the dielectric precursor layer starts crystallization to vaporize residual solvent. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming a film for forming a dielectric film with an ABOx type crystal structure capable of forming a dielectric film having a reduced dielectric loss and satisfactory insulation properties. SOLUTION: The composition for forming a film comprises: a reaction product between (A) a first metal compound as a metal hydroxide containing at least one kind of metal atom selected from Ba, Sr and Ca and (B) a second metal compound as at least one kind of metal alkoxide selected from Ti, Zr and Hf and/or the partially hydrolyzed condensate thereof; and (C) an organic solvent, and the molar ratio between the metal atoms of the first metal compound and the metal atoms of the second metal compound is 0.9 to 1.1. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To obtain a compound for forming a ferroelectric thin film capable of forming a ferroelectric thin film where good hysteresis characteristics and saturation characteristics are obtained, on a substrate such as platinum, iridium, and iridium oxide. SOLUTION: Coating solution for forming the ferroelectric thin film, which contains (A) organic solvent expressed in the following general formula (1) and (B) organo-metallic compound, in which content of propylene glycol is 10,000 ppm or less. R 1 O(CHCH 3 CH 2 O) n R 2 ...(1) (where R 1 and R 2 independently show monovalent organic group selected from hydrogen atom, alkyl group having 1 to 4 of carbon number, or CH 3 CO, at least one of R 1 and R 2 is a group other than hydrogen atom, and n expresses integer of 1 to 2). COPYRIGHT: (C)2003,JPO
Abstract translation:要解决的问题:为了获得能够形成具有良好滞后特性和饱和特性的铁电薄膜的铁电薄膜的化合物,在诸如铂,铱和氧化铱的基板上。 解决方案:含有(A)下述通式(1)表示的有机溶剂和(B)丙二醇含量为10,000ppm以下的有机金属化合物的铁电体薄膜形成用涂布液。 R 1 O(CHCH 3 CH 2 O)n R 2 ...(1)(其中R 1和R 2独立地表示选自氢原子,具有1-4个碳原子的烷基的一价有机基团 数或CH 3 CO,R 1和R 2中的至少一个是除氢原子以外的基团,n表示1〜2的整数)。
Abstract:
PROBLEM TO BE SOLVED: To obtain a film-forming composition capable of giving a coating film having a low relative dielectric constant as an interlaminar electrical film material in a semiconductor device, or the like, and scarcely causing foreign materials even when stored as a varnish for a long period. SOLUTION: The film-forming composition contains (A) a hydrolyzed condensation product which is obtained by hydrolyzing and condensing an alkylalkoxysilane, (B) an organic solvent, and (C) a compound expressed by the formula (4): R R R Si-O-SiR R R (R to R are each an alkyl or an aryl, and are same or different from each other).