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    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    41.
    发明公开
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    FOKUSMESSUNGEN MIT SCATTEROMETRIE

    公开(公告)号：EP3126893A1

    公开(公告)日：2017-02-08

    申请号：EP15774184.4

    申请日：2015-03-30

    Applicant: Kla-Tencor Corporation

    Inventor： EL KODADI, Mohammed ,  AMIR, Nuriel ,  VOLKOVICH, Roie ,  LEVINSKI, Vladimir ,  FELER, Yoel ,  KANDEL, Daniel ,  GUTMAN, Nadav ,  PANDEV, Stilian ,  SANKO, Dzmitry

    IPC: G02B15/14 ,  H04N7/18

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的聚焦敏感和对焦不敏感图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，并且第二节距可以是数倍大。 可以产生第一个不对焦模式，以产生第一关键尺寸，并且可以产生第二焦点敏感图案以产生仅当满足指定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION
    42.
    发明公开
    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION 审中-公开
    方法和系统提供PROZESSWERKZEUGKORRIGIERBARER使用优化的扫描方案智能插值

    公开(公告)号：EP2537180A2

    公开(公告)日：2012-12-26

    申请号：EP11745086.6

    申请日：2011-02-14

    Applicant: KLA-Tencor Corporation

    Inventor： IZIKSON, Pavel ,  KANDEL, Daniel ,  ROBINSON, John

    IPC: H01L21/66 ,  H01L21/027

    CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL
    48.
    发明公开
    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开

    公开(公告)号：EP3779598A2

    公开(公告)日：2021-02-17

    申请号：EP20177915.4

    申请日：2012-04-04

    Applicant: Kla-Tencor Corporation

    Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

    IPC: G03F7/20 ,  G01N37/00

    Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

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